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Elsevier

Books in Surfaces and interfaces

This portfolio explores the physical and chemical properties of surfaces, thin films, and interfaces. Supporting materials scientists, chemists, and physicists, it features advances in surface characterization, nanostructures, and catalysis, driving innovations in electronics, energy, and nanotechnology.

  • Vacuum Engineering Calculations, Formulas, and Solved Exercises

    • 1st Edition
    • Armand Berman
    • English
    This book was written with two main objectives in mind - to summarize and organize the vast material of vacuum technology in sets of useful formulas, and to provide a collection of worked out exercises showing how to use these formulas for solving technological problems. It is an ideal reference source for those with little time to devote to a full mathematical treatment of the many problems issued in vacuum practice, but who have a working knowledge of the essentials of vacuum technology, elementary physics, and mathematics. This time saving book employs a problem-solving approach throughout, providing the methodology for computing vacuum parameters. References and solved exercises are appended to the end of each chapter.

  • Metallurgical Coatings and Thin Films 1991

    • 1st Edition
    • G.E. McGuire + 2 more
    • English
    The contributions in this two-volume set represent the work of over two hundred international researchers from universities, government laboratories and industry, with diverse backgrounds and interests in a wide range of coatings and thin film processes. The two hundred and six papers attest to the fact that Metallurgical Coatings is a rapidly growing field attracting experts from the large materials, scientific and technical community. The papers will be a useful and dynamic tool for those wishing to increase their knowledge on metallurgical coatings, as well as providing a guide to recent literature in this field.

  • Vacuum Technology, Thin Films, and Sputtering

    An Introduction
    • 1st Edition
    • R. V. Stuart
    • English
    Vacuum technology is advancing and expanding so rapidly that a major difficulty for most companies in the field is finding qualified technicians needed for expansion and as replacements. The only recourse for most companies is to hire capable, though untrained, people to train them in-house. One of the problems in this course of action is that it repeatedly draws on the valuable time of experienced personnel to explain fundamental concepts to a trainee.

  • Theory and Practice of Emulsion Technology

    • 1st Edition
    • A.L. Smith
    • English
    Theory and Practice of Emulsion Technology covers the proceedings of the Theory and Practice of Emulsion Technology Symposium, held at Brunel University on September 16-18, 1974. This book is organized into four sessions encompassing 19 chapters. The opening session deals with the emulsification process and emulsion polymerization, as well as the adsorption behavior of polyelectrolyte-stab... emulsions. The following session examines the rheological properties, stability, and fluid mechanics of emulsions. This session also looks into the role of protein conformation and crude oil-water interfacial properties in emulsion stability. The third session highlights the preparation, formation, properties, and application of bitumen emulsions. The concluding session describes the process of spontaneous emulsification; the steric emulsion stabilization; the interfacial measurements of oil-in-water emulsions; and the influence of the disperse phase on emulsion stability. This book will be of value to chemists, chemical and process engineers, and researchers.

  • Semiconductor Materials Analysis and Fabrication Process Control

    • 1st Edition
    • Volume 34
    • G.M. Crean + 2 more
    • English
    There is a growing awareness that the successful implementation of novel material systems and technology steps in the fabrication of microelectronic and optoelectronic devices, is critically dependent on the understanding and control of the materials, the process steps and their interactions. The contributions in this volume demonstrate that characterisation and analysis techniques are an essential support mechanism for research in these fields. Current major research themes are reviewed both in the development and application of diagnostic techniques for advanced materials analysis and fabrication process control. Two distinct trends are elucidated: the emergence and evaluation of sophisticated in situ optical diagnostic techniques such as photoreflectance and spectroellipsometry and the industrial application of ultra-high sensitivity chemical analysis techniques for contamination monitoring. The volume will serve as a useful and timely overview of this increasingly important field.

  • Shallow Impurity Centers in Semiconductors

    • 1st Edition
    • A. Baldereschi + 1 more
    • English
    Shallow Impurity Centers in Semiconductors presents the proceedings of the Second International Conference on Shallow Impurity Centers/Fourth Trieste IUPAP-ICTP Semiconductor Symposium, held at the International Center for Theoretical Physics in Trieste, Italy, on July 28 to August 1, 1986. The book presents the perspectives of some of the leading scientists in the field who address basic physical aspects and device implications, novel phenomena, recent experimental and theoretical techniques, and the behavior of impurities in new semiconductor materials. Organized into 22 chapters, the book begins with an overview of the early years of shallow impurity states before turning to a discussion of progress in spectroscopy of shallow centers in semiconductors since 1960. It then looks at theoretical and experimental aspects of hydrogen diffusion and shallow impurity passivation in semiconductors, along with optical excitation spectroscopy of isolated double donors in silicon. The book methodically walks the reader through recent research on double acceptors using near-, mid-, and far-infrared spectroscopy, the far-infrared absorption spectrum of elemental shallow donors and acceptors in germanium, and impurity spectra in stress-induced uniaxial germanium using Zeeman spectroscopy. Other papers focus on the theoretical properties of hydrogenic impurities in quantum wells, lattice relaxations at substitutional impurities in semiconductors, shallow bound excitons in silver halides, and the electronic structure of bound excitons in semiconductors. The book concludes with a chapter that reviews picosecond spectroscopy experiments performed in III-V compounds and alloy semiconductors. This volume will be useful to physicists and researchers who are working on shallow impurity centers in semiconductor physics.

  • Silicon Molecular Beam Epitaxy

    • 1st Edition
    • Volume 10A
    • Erwin Kasper + 1 more
    • English
    This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy.A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy (J.-E. Sundgren et al.). Influence of substrate orientation on surface segregation process in silicon-MBE (K. Nakagawa et al.). Growth and transport properties of SimSb1 (H. Jorke, H. Kibbel). Author Index. Volume. II. In-situ electron microscope studies of lattice mismatch relaxation in GexSi1-x/Si heterostructures (R. Hull et al.). Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1-x/Si strained layer superlattices (D.D. Perovic et al.). Silicon Growth. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy (P.J. Grunthaner et al.). Interaction of structure with kinetics in Si(001) homoepitaxy (S. Clarke et al.). Surface step structure of a lens-shaped Si(001) vicinal substrate (K. Sakamoto et al.). Photoluminescence characterization of molecular beam epitaxial silicon (E.C. Lightowlers et al.). Doping. Boron doping using compound source (T. Tatsumi). P-type delta doping in silicon MBE (N.L. Mattey et al.). Modulation-doped superlattices with delta layers in silicon (H.P. Zeindell et al.). Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers (N. Djebbar et al.). Alternative Growth Methods. Limited reaction processing: growth of Si/Si1-xGex for heterojunction bipolar transistor applications (J.L. Hoyt et al.). High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition (M.L. Green et al.). Epitaxial growth of single-crystalline Si1-xGex on Si(100) by ion beam sputter deposition (F. Meyer et al.). Phosphorus gas doping in gas source silicon-MBE (H. Hirayama, T. Tatsumi). Devices. Narrow band gap base heterojunction bipolar transistors using SiGe alloys (S.S. Iyer et al.). Silicon-based millimeter-wave integrated circuits (J-F. Luy). Performance and processing line integration of a silicon molecular beam epitaxy system (A.A. van Gorkum et al.). Silicides. Reflection high energy electron diffraction study of Cosi2/Si multilayer structures (Q. Ye at al.). Epitaxy of metal silicides (H. von Kanel et al.). Epitaxial growth of ErSi2 on (111)si (D. Loretto et al.). Other Material Systems. Oxygen-doped and nitrogen-doped silicon films prepared by molecular beam epitaxy (M. Tabe et al.). Properties of diamond structure SnGe films grown by molecular beam epitaxy (A. Harwit et al.). Si-MBE: Prospects and Challenges. Prospects and challenges for molecular beam epitaxy in silicon very-large-scale integration (W. Eccleston). Prospects and challenges for SiGe strained-layer epitaxy (T.P. Pearsall). Author Index.

  • Photonic Probes of Surfaces

    • 1st Edition
    • P. Halevi
    • English
    This volume is devoted principally to optical spectroscopies of material surfaces and also encompasses scattering techniques and theoretical response analysis as well as spectroscopies. In addition to solid surfaces some attention is also devoted to interfaces between two solids, between a solid and a liquid and to a liquid-vapor interface. These surfaces may be clean and perfect, in which case the purpose of the spectroscopical method at hand is to determine the deviation of the atomic structure in the surface region from that in the bulk, namely the surface reconstruction. Otherwise the surface may be imperfect due to roughness, strain or overlayers, in which case the spectroscopy can yield information on the nature of such imperfections, including the monitoring of growth processes. One of the foremost purposes of surface spectroscopies is to extract information on atomic and molecular adsorbates on solid surfaces. Most of the 10 chapters are concerned with photonic sources of excitation, the respective spectral regions ranging from the far infrared to X-rays.In conclusion this book provides a state-of-the-art review of all major types of photonic probes of surfaces and interfaces and deals with both applications and experiment and theory.

  • Thin Film Processes II

    • 1st Edition
    • Werner Kern
    • John L. Vossen
    • English
    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.

  • Surface Preparation Techniques for Adhesive Bonding

    • 2nd Edition
    • Raymond F. Wegman + 1 more
    • English
    Surface Preparation Techniques for Adhesive Bonding is an essential guide for materials scientists, mechanical engineers, plastics engineers, scientists and researchers in manufacturing environments making use of adhesives technology. Wegman and van Twisk provide practical coverage of a topic that receives only cursory treatment in more general books on adhesives, making this book essential reading for adhesion specialists, plastics engineers, and a wide range of engineers and scientists working in sectors where adhesion is an important technology, e.g. automotive / aerospace, medical devices, electronics. Wegman and van Twisk provide a wealth of practical information on the processing of substrate surfaces prior to adhesive bonding. The processing of aluminum and its alloys, titanium and its alloys, steels, copper and its alloys, and magnesium are treated in the form of detailed specifications with comparative data. Other metals not requiring extensive treatment are also covered in detail, as are metal matrix and organic matrix composites, thermosets and thermoplastics. This new edition has been updated with coverage of the latest developments in the field including the sol-gel process for aluminum, titanium, and stainless steel, atmospheric plasma treatment for metals, plastics and rubbers and treatments for bronze and nickel alloys.

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