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Books in Surfaces and interfaces

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    • High Tc Superconductor Thin Films

      • 1st Edition
      • December 2, 2012
      • L. Correra
      • English
      • eBook
        9 7 8 0 4 4 4 6 0 0 2 5 7
      Interdisciplinary research on superconducting oxides is the main focus of the contributions in this volume. Several aspects of the thin film field from fundamental properties to applications are examined. Interesting results for the Bi system are also reviewed. The 132 papers, including 8 invited, report mainly on the 1-2-3 system, indicating that the Y-Ba-Cu-O and related compounds are still the most intensively studied materials in this field. The volume attests to the significant progress that has been made in this field, as well as reporting on the challenging problems that still remain to be solved.

    • Photonic Probes of Surfaces

      • 1st Edition
      • December 2, 2012
      • P. Halevi
      • English
      • Paperback
        9 7 8 0 4 4 4 5 6 8 5 4 0
      • eBook
        9 7 8 0 4 4 4 5 9 9 3 4 6
      This volume is devoted principally to optical spectroscopies of material surfaces and also encompasses scattering techniques and theoretical response analysis as well as spectroscopies. In addition to solid surfaces some attention is also devoted to interfaces between two solids, between a solid and a liquid and to a liquid-vapor interface. These surfaces may be clean and perfect, in which case the purpose of the spectroscopical method at hand is to determine the deviation of the atomic structure in the surface region from that in the bulk, namely the surface reconstruction. Otherwise the surface may be imperfect due to roughness, strain or overlayers, in which case the spectroscopy can yield information on the nature of such imperfections, including the monitoring of growth processes. One of the foremost purposes of surface spectroscopies is to extract information on atomic and molecular adsorbates on solid surfaces. Most of the 10 chapters are concerned with photonic sources of excitation, the respective spectral regions ranging from the far infrared to X-rays.In conclusion this book provides a state-of-the-art review of all major types of photonic probes of surfaces and interfaces and deals with both applications and experiment and theory.

    • Metallurgical Coatings and Thin Films 1991

      • 1st Edition
      • December 2, 2012
      • G.E. McGuire + 2 more
      • English
      • Paperback
        9 7 8 0 4 4 4 5 6 6 4 6 1
      • eBook
        9 7 8 0 4 4 4 5 9 9 9 3 3
      The contributions in this two-volume set represent the work of over two hundred international researchers from universities, government laboratories and industry, with diverse backgrounds and interests in a wide range of coatings and thin film processes. The two hundred and six papers attest to the fact that Metallurgical Coatings is a rapidly growing field attracting experts from the large materials, scientific and technical community. The papers will be a useful and dynamic tool for those wishing to increase their knowledge on metallurgical coatings, as well as providing a guide to recent literature in this field.

    • Thin Film Processes

      • 1st Edition
      • December 2, 2012
      • John L. Vossen
      • English
      • Paperback
        9 7 8 0 1 2 3 9 6 0 2 7 6
      • eBook
        9 7 8 0 3 2 3 1 3 8 9 8 7
      Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

    • Vacuum Technology, Thin Films, and Sputtering

      • 1st Edition
      • December 2, 2012
      • R. V. Stuart
      • English
      • Paperback
        9 7 8 0 1 2 3 9 6 0 5 4 2
      • eBook
        9 7 8 0 3 2 3 1 3 9 1 5 1
      Vacuum technology is advancing and expanding so rapidly that a major difficulty for most companies in the field is finding qualified technicians needed for expansion and as replacements. The only recourse for most companies is to hire capable, though untrained, people to train them in-house. One of the problems in this course of action is that it repeatedly draws on the valuable time of experienced personnel to explain fundamental concepts to a trainee.

    • Vacuum Engineering Calculations, Formulas, and Solved Exercises

      • 1st Edition
      • December 2, 2012
      • Armand Berman
      • English
      • Paperback
        9 7 8 0 1 2 4 1 2 0 7 2 3
      • eBook
        9 7 8 0 3 2 3 1 4 0 4 1 6
      This book was written with two main objectives in mind - to summarize and organize the vast material of vacuum technology in sets of useful formulas, and to provide a collection of worked out exercises showing how to use these formulas for solving technological problems. It is an ideal reference source for those with little time to devote to a full mathematical treatment of the many problems issued in vacuum practice, but who have a working knowledge of the essentials of vacuum technology, elementary physics, and mathematics. This time saving book employs a problem-solving approach throughout, providing the methodology for computing vacuum parameters. References and solved exercises are appended to the end of each chapter.

    • Silicon Molecular Beam Epitaxy

      • 1st Edition
      • Volume 10A
      • December 2, 2012
      • Erwin Kasper + 1 more
      • English
      • Paperback
        9 7 8 0 0 8 0 9 7 8 4 1 3
      • eBook
        9 7 8 0 0 8 0 9 8 3 6 8 4
      This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy.A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy (J.-E. Sundgren et al.). Influence of substrate orientation on surface segregation process in silicon-MBE (K. Nakagawa et al.). Growth and transport properties of SimSb1 (H. Jorke, H. Kibbel). Author Index. Volume. II. In-situ electron microscope studies of lattice mismatch relaxation in GexSi1-x/Si heterostructures (R. Hull et al.). Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1-x/Si strained layer superlattices (D.D. Perovic et al.). Silicon Growth. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy (P.J. Grunthaner et al.). Interaction of structure with kinetics in Si(001) homoepitaxy (S. Clarke et al.). Surface step structure of a lens-shaped Si(001) vicinal substrate (K. Sakamoto et al.). Photoluminescence characterization of molecular beam epitaxial silicon (E.C. Lightowlers et al.). Doping. Boron doping using compound source (T. Tatsumi). P-type delta doping in silicon MBE (N.L. Mattey et al.). Modulation-doped superlattices with delta layers in silicon (H.P. Zeindell et al.). Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers (N. Djebbar et al.). Alternative Growth Methods. Limited reaction processing: growth of Si/Si1-xGex for heterojunction bipolar transistor applications (J.L. Hoyt et al.). High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition (M.L. Green et al.). Epitaxial growth of single-crystalline Si1-xGex on Si(100) by ion beam sputter deposition (F. Meyer et al.). Phosphorus gas doping in gas source silicon-MBE (H. Hirayama, T. Tatsumi). Devices. Narrow band gap base heterojunction bipolar transistors using SiGe alloys (S.S. Iyer et al.). Silicon-based millimeter-wave integrated circuits (J-F. Luy). Performance and processing line integration of a silicon molecular beam epitaxy system (A.A. van Gorkum et al.). Silicides. Reflection high energy electron diffraction study of Cosi2/Si multilayer structures (Q. Ye at al.). Epitaxy of metal silicides (H. von Kanel et al.). Epitaxial growth of ErSi2 on (111)si (D. Loretto et al.). Other Material Systems. Oxygen-doped and nitrogen-doped silicon films prepared by molecular beam epitaxy (M. Tabe et al.). Properties of diamond structure SnGe films grown by molecular beam epitaxy (A. Harwit et al.). Si-MBE: Prospects and Challenges. Prospects and challenges for molecular beam epitaxy in silicon very-large-scale integration (W. Eccleston). Prospects and challenges for SiGe strained-layer epitaxy (T.P. Pearsall). Author Index.

    • Metallurgical Coatings and Thin Films 1992

      • 1st Edition
      • December 2, 2012
      • G.E. McGuire + 2 more
      • English
      • Paperback
        9 7 8 0 4 4 4 5 6 4 3 3 7
      • eBook
        9 7 8 0 4 4 4 5 9 6 8 8 8
      One of the increasingly important requirements for high technology materials is that they possess near-surface properties different to their bulk properties. Specific surface properties are generally achieved through the use of these films or coatings or by modifying the structure or composition of the near surface. This two-volume work contains 157 papers covering a wide range of topics involving films, coatings, and modified surfaces. All aspects of the development of deposition technologies are addressed including basic research, applied research, applications development and full scale industrial production. The work will be of interest to materials scientists, physicists, electronic, chemical and mechanical engineers, and chemists.

    • Shallow Impurity Centers in Semiconductors

      • 1st Edition
      • December 2, 2012
      • A. Baldereschi + 1 more
      • English
      • Paperback
        9 7 8 0 0 8 0 9 7 8 4 7 5
      • Hardback
        9 7 8 0 4 4 4 8 7 0 8 7 2
      • eBook
        9 7 8 0 0 8 0 9 8 4 5 9 9
      Shallow Impurity Centers in Semiconductors presents the proceedings of the Second International Conference on Shallow Impurity Centers/Fourth Trieste IUPAP-ICTP Semiconductor Symposium, held at the International Center for Theoretical Physics in Trieste, Italy, on July 28 to August 1, 1986. The book presents the perspectives of some of the leading scientists in the field who address basic physical aspects and device implications, novel phenomena, recent experimental and theoretical techniques, and the behavior of impurities in new semiconductor materials. Organized into 22 chapters, the book begins with an overview of the early years of shallow impurity states before turning to a discussion of progress in spectroscopy of shallow centers in semiconductors since 1960. It then looks at theoretical and experimental aspects of hydrogen diffusion and shallow impurity passivation in semiconductors, along with optical excitation spectroscopy of isolated double donors in silicon. The book methodically walks the reader through recent research on double acceptors using near-, mid-, and far-infrared spectroscopy, the far-infrared absorption spectrum of elemental shallow donors and acceptors in germanium, and impurity spectra in stress-induced uniaxial germanium using Zeeman spectroscopy. Other papers focus on the theoretical properties of hydrogenic impurities in quantum wells, lattice relaxations at substitutional impurities in semiconductors, shallow bound excitons in silver halides, and the electronic structure of bound excitons in semiconductors. The book concludes with a chapter that reviews picosecond spectroscopy experiments performed in III-V compounds and alloy semiconductors. This volume will be useful to physicists and researchers who are working on shallow impurity centers in semiconductor physics.

    • Developments in Surface Contamination and Cleaning - Vol 5

      • 1st Edition
      • November 29, 2012
      • Rajiv Kohli + 1 more
      • English
      • Hardback
        9 7 8 1 4 3 7 7 7 8 8 1 6
      • eBook
        9 7 8 1 4 3 7 7 7 8 8 2 3
      In this series, Rajiv Kohli and Kash Mittal have brought together the work of experts from different industry sectors and backgrounds to provide a state-of-the-art survey and best-practice guidance for scientists and engineers engaged in surface cleaning or dealing with the consequences of surface contamination. This volume complements Volumes 3 and 4 of this series, which focused largely on particulate contaminants. The expert contributions in this volume cover methods for removal of non-particulate contaminants, such as metallic and non-metallic thin films, hydrocarbons, toxic and hazardous chemicals, and microbiological substances, as well as contamination monitoring in pharmaceutical manufacturing, and an innovative method for characterization at the nanoscale.

Related subjects

Biosurfaces and biointerfaces

Processing of surfaces

Structure and properties of surfaces interfaces and thin films

Surfaces and interfaces general

Vacuum technology