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Elsevier

North Holland

  • Spin Waves and Magnetic Excitations

    • 1st Edition
    • Volume 22
    • English
    Modern Problems in Condensed Matter Sciences, Volume 22.1: Spin Waves and Magnetic Excitations, Part I focuses on the principles, methodologies, approaches, and reactions involved in spin waves and magnetic excitations, including, Brillouin-Mandelstam light scattering, optical magnetic excitations, and magnetic dielectrics. The selection first elaborates on spin waves in magnetic dielectrics current status of the theory and light scattering from spin waves. Discussions focus on magneto-optic effects and the mechanism of light scattering in magnets, Brillouin-Mandelstam light scattering, Raman scattering, Collinear Heisenberg ferromagnet, low-temperature phase transitions, and low-dimensional systems. The text then ponders on optical magnetic excitations, spin waves above the threshold of parametric excitations, and theory of spin excitations in rare earth systems. Topics include Hamiltonian for rare earth systems, parametric instability of spin waves in magnetic dielectrics, nonstationary processes in parametric excitation of spin waves, radiative decay of magnetic excitons, and mechanism of the generation of magnetic excitations by light. The book tackles 4f moments and their interaction with conduction electrons and neutron scattering studies of magnetic excitations in itinerant magnets, including magnetic excitations at finite and low temperatures, paramagnetic scattering, coupling to conduction electrons, and virtual magnetic excitations. The selection is highly recommended for researchers wanting to study spin waves and magnetic excitations.

  • Mesoscopic Phenomena in Solids

    • 1st Edition
    • B.L. Altshuler + 2 more
    • English
    The physics of disordered systems has enjoyed a resurgence of interest in the last decade. New concepts such as weak localization, interaction effects and Coulomb gap, have been developed for the transport properties of metals and insulators. With the fabrication of smaller and smaller samples and the routine availability of low temperatures, new physics has emerged from the studies of small devices. The new field goes under the name "mesoscopic physics" and has rapidly developed, both experimentally and theoretically. This book is designed to review the current status of the field.Most of the chapters in the book are devoted to the development of new ideas in the field. They include reviews of experimental observations of conductance fluctuations and the Aharonov-Bohm oscillations in disordered metals, theoretical and experimental work on low frequency noise in small disordered systems, transmittancy fluctuations through random barriers, and theoretical work on the distribution of fluctuation quantities such as conductance. Two chapters are not connected directly to the mesoscopic fluctuations but deal with small systems. They cover the effects of Coulomb interaction in the tunneling through the small junctions, and experimental results on ballistic transport through a perfect conductor.

  • Electronic Phase Transitions

    • 1st Edition
    • Volume 32
    • Yu.V. Kopaev + 1 more
    • English
    Electronic Phase Transitions deals with topics, which are presently at the forefront of scientific research in modern solid-state theory. Anderson localization, which has fundamental implications in many areas of solid-state physics as well as spin glasses, with its influence on quite different research activities such as neural networks, are two examples that are reviewed in this book. The ab initio statistical mechanics of structural phase transitions is another prime example, where the interplay and connection of two unrelated disciplines of solid-state theory - first principle electronic structure calculations and critical phenomena - has given rise to impressive new insights. Clearly, there is more and more need for accurate, stable numerical simulations of models of interacting electrons, presently discussed with great vigor in connection with high-Tc superconductors where the superconducting transition is close to a magnetic transition, i.e. an antiferromagnetic spin structure. These topics and others are discussed and reviewed by leading experts in the field.

  • Kinetics of Aggregation and Gelation

    • 1st Edition
    • F. Family + 1 more
    • English
    Kinetics of Aggregation and Gelation presents the proceedings of the International Topical Conference on Kinetics of Aggregation and Gelation held on April 2-4, 1984 in Athens, Georgia. The purpose of the conference was to bring together international experts from a wide variety of backgrounds who are studying phenomena inherently similar to the formation of large clusters by the union of many separate, small elements, to present and exchange ideas on new theories and results of experimental and computer simulations. This book is divided into 57 chapters, each of which represents an oral presentation that is part of a unified whole. The book begins with a presentation on fractal concepts in aggregation and gelation, followed by presentations on topics such as aggregative fractals called ""squigs""; multi-particle fractal aggregation; theory of fractal growth processes; self-similar structures; and interface dynamics. Other chapters cover addition polymerization and related models; the kinetic gelation model; a new model of linear polymers; red cell aggregation kinetics; the Potts Model; aggregation of colloidal silica; the ballistic model of aggregation; stochastic dynamics simulation of particle aggregation; particle-cluster aggregation; kinetic clustering of clusters; computer simulations of domain growth; and perspectives in the kinetics of aggregation and gelation. This book will be of interest to practitioners in the fields of chemistry, theoretical physics, and materials engineering.

  • High Gain, High Power Free Electron Laser: Physics and Application to TeV Particle Acceleration

    • 1st Edition
    • R. Bonifacio + 2 more
    • English
    During the past few years the physics and technology of charged particle beams on which electron-positron linear colliders in the TeV region, storage rings from synchrotron radiation sources and Free Electron Lasers are based, has seen a remarkable development. The purpose of this series of schools is to address the physics and technology issues of this field, train young people and at the same time provide a forum for discussions on recent advances for scientists active in this field. The subjects chosen for this first course reflect the recent interest in TeV electron positron colliders, the possibility offered by Free Electron Lasers to power them and the developments in the production of high brightness electron beams.

  • Surfaces and Interfaces: Physics and Electronics

    • 1st Edition
    • R.S. Bauer
    • English
    Surfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for Theoretical Physics in Trieste, Italy on August 30 to September 3, 1982. The book focuses on the processes, methodologies, reactions, and approaches involved in semiconductor physics. The selection first elaborates on the electronic properties and surface geometry of GaAs and ZnO surfaces; electronic structure of Si (III) surfaces; and photoemission studies of surface states on Si (III) 2X1. Discussions focus on consistency of different experiments, relating experiments to a theoretical model, quenching of surface states by hydrogen, inverse photoemission results, and basic data and models of the low-index ZnO surfaces. The text then examines Si (III) 2X1 studies by angle resolved photoemission; electronic surface states at steps in Si (III) 2X1; and a novel method for the study of optical properties of surfaces. The manuscript takes a look at spot profile analysis (LEED) of defects at silicon surfaces; chemisorption-induce... defects at interfaces on compound semiconductors; and surface defects on semiconductors. The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed. The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor physics.

  • Physics of Radiation Effects in Crystals

    • 1st Edition
    • Volume 13
    • R.A. Johnson + 1 more
    • English
    ``Physics of Radiation Effects in Crystals'' is presented in two parts. The first part covers the general background and theory of radiation effects in crystals, including the theory describing the generation of crystal lattice defects by radiation, the kinetic approach to the study of the disposition of these defects and the effects of the diffusion of these defects on alloy compositions and phases. Specific problems of current interest are treated in the second part and include anisotropic dimensional changes in x-uranium, zirconium and graphite, acceleration of thermal creep in reactor materials, and radiation damage of semiconductors and superconductors.

  • Physics in the Making

    Essays on Developments in 20th Century Physics
    • 1st Edition
    • A. Sarlemijn + 1 more
    • English
    H.B.G. Casimir's life, interests and works are intertwined with the importantdevelopment... that have taken place in physics during this century. This book was compiled by his friends and admirers in honour of his 80th birthday andconcentrates mainly on Casimir's achievements in the field of physics, thoughwithout ignoring the peripheral areas of the history and philosophy of physics in which he was greatly interested. The book is divided into four parts. Part I describes Casimir's teachers, Ehrenfest, Bohr and Pauli, and will be of general interest due to the key role which these physicists played in moderndevelopments. The articles do give new facts and provide new insights into thehistory of modern physics. Part II consists of essays on recent developments invarious areas of physics in which Casimir has taken an active interest, such asthe modern concept of time, statistical foundations of electrodynamic theory andfield theory. The subjects covered in Part III have been selected because ofCasimir's efforts in the industrial research area of physics. They cover past,present and future expectations in research. Part IV contains an essay whichdiscusses a philosophy of physics currently under discussion, which states thatphenomenological laws prevail over fundamental ones for the purpose ofexperimental and technical physics. A second chapter in this final part gives acritical analysis of this philosophical view. The book is concluded by anappendix discussing Casimir's activities as a lecturer, written by a formerstudent.

  • Random Processes: Measurement, Analysis and Simulation

    • 1st Edition
    • J. Cacko + 2 more
    • English
    This book covers the basic topics associated with the measurement, analysis and simulation of random environmental processes which are encountered in practice when dealing with the dynamics, fatigue and reliability of structures in real environmental conditions. The treatment is self-contained and the authors have brought together and integrated the most important information relevant to this topic in order that the newcomer can see and study it as a whole. This approach should also be of interest to experienced engineers from fatigue laboratories who want to learn more about the possible methods of simulation, especially for use in real time on electrohydraulic computer-controlled loading machines.Problems of constructing a measuring system are dealt with in the first chapter. Here the authors discuss the choice of measuring conditions and locations, as well as the organization of a chain of devices for measuring and recording random environmental processes. Some experience gained from practical measurements is also presented. The recorded processes are further analysed by various methods. The choice is governed by the aims of the measurements and applications of the results. Chapter 2 is thus devoted to methods of random process evaluations for digital computers, both from the fatigue and dynamic point of view. The most important chapter is Chapter 3 as this presents a review of up-to-date methods of random process simulation with given statistical characteristics. These methods naturally follow those of random process analysis, and their results form initial data for the corresponding simulations algorithms, including occurrences of characteristic parameters of counting methods, reproduction of correlation theory characteristics and of autoregressive models. The simulation of non-stationary processes is treated in depth, taking into account their importance for practical applications and also the lack of information of this subject.The book is intended to help resolve many practical problems concerning the methods and quality of environmental process evaluation and simulation which can arise when up-to-date loading systems with computer control are being used in material, component and structural fatigue and dynamic research.

  • Silicon Molecular Beam Epitaxy

    • 1st Edition
    • Volume 10A
    • Erwin Kasper + 1 more
    • English
    This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy.A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy (J.-E. Sundgren et al.). Influence of substrate orientation on surface segregation process in silicon-MBE (K. Nakagawa et al.). Growth and transport properties of SimSb1 (H. Jorke, H. Kibbel). Author Index. Volume. II. In-situ electron microscope studies of lattice mismatch relaxation in GexSi1-x/Si heterostructures (R. Hull et al.). Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1-x/Si strained layer superlattices (D.D. Perovic et al.). Silicon Growth. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy (P.J. Grunthaner et al.). Interaction of structure with kinetics in Si(001) homoepitaxy (S. Clarke et al.). Surface step structure of a lens-shaped Si(001) vicinal substrate (K. Sakamoto et al.). Photoluminescence characterization of molecular beam epitaxial silicon (E.C. Lightowlers et al.). Doping. Boron doping using compound source (T. Tatsumi). P-type delta doping in silicon MBE (N.L. Mattey et al.). Modulation-doped superlattices with delta layers in silicon (H.P. Zeindell et al.). Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers (N. Djebbar et al.). Alternative Growth Methods. Limited reaction processing: growth of Si/Si1-xGex for heterojunction bipolar transistor applications (J.L. Hoyt et al.). High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition (M.L. Green et al.). Epitaxial growth of single-crystalline Si1-xGex on Si(100) by ion beam sputter deposition (F. Meyer et al.). Phosphorus gas doping in gas source silicon-MBE (H. Hirayama, T. Tatsumi). Devices. Narrow band gap base heterojunction bipolar transistors using SiGe alloys (S.S. Iyer et al.). Silicon-based millimeter-wave integrated circuits (J-F. Luy). Performance and processing line integration of a silicon molecular beam epitaxy system (A.A. van Gorkum et al.). Silicides. Reflection high energy electron diffraction study of Cosi2/Si multilayer structures (Q. Ye at al.). Epitaxy of metal silicides (H. von Kanel et al.). Epitaxial growth of ErSi2 on (111)si (D. Loretto et al.). Other Material Systems. Oxygen-doped and nitrogen-doped silicon films prepared by molecular beam epitaxy (M. Tabe et al.). Properties of diamond structure SnGe films grown by molecular beam epitaxy (A. Harwit et al.). Si-MBE: Prospects and Challenges. Prospects and challenges for molecular beam epitaxy in silicon very-large-scale integration (W. Eccleston). Prospects and challenges for SiGe strained-layer epitaxy (T.P. Pearsall). Author Index.

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