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    • Silicon Molecular Beam Epitaxy

      • 1st Edition
      • Volume 10A
      • December 2, 2012
      • Erwin Kasper + 1 more
      • English
      • Paperback
        9 7 8 0 0 8 0 9 7 8 4 1 3
      • eBook
        9 7 8 0 0 8 0 9 8 3 6 8 4
      This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy.A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy (J.-E. Sundgren et al.). Influence of substrate orientation on surface segregation process in silicon-MBE (K. Nakagawa et al.). Growth and transport properties of SimSb1 (H. Jorke, H. Kibbel). Author Index. Volume. II. In-situ electron microscope studies of lattice mismatch relaxation in GexSi1-x/Si heterostructures (R. Hull et al.). Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1-x/Si strained layer superlattices (D.D. Perovic et al.). Silicon Growth. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy (P.J. Grunthaner et al.). Interaction of structure with kinetics in Si(001) homoepitaxy (S. Clarke et al.). Surface step structure of a lens-shaped Si(001) vicinal substrate (K. Sakamoto et al.). Photoluminescence characterization of molecular beam epitaxial silicon (E.C. Lightowlers et al.). Doping. Boron doping using compound source (T. Tatsumi). P-type delta doping in silicon MBE (N.L. Mattey et al.). Modulation-doped superlattices with delta layers in silicon (H.P. Zeindell et al.). Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers (N. Djebbar et al.). Alternative Growth Methods. Limited reaction processing: growth of Si/Si1-xGex for heterojunction bipolar transistor applications (J.L. Hoyt et al.). High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition (M.L. Green et al.). Epitaxial growth of single-crystalline Si1-xGex on Si(100) by ion beam sputter deposition (F. Meyer et al.). Phosphorus gas doping in gas source silicon-MBE (H. Hirayama, T. Tatsumi). Devices. Narrow band gap base heterojunction bipolar transistors using SiGe alloys (S.S. Iyer et al.). Silicon-based millimeter-wave integrated circuits (J-F. Luy). Performance and processing line integration of a silicon molecular beam epitaxy system (A.A. van Gorkum et al.). Silicides. Reflection high energy electron diffraction study of Cosi2/Si multilayer structures (Q. Ye at al.). Epitaxy of metal silicides (H. von Kanel et al.). Epitaxial growth of ErSi2 on (111)si (D. Loretto et al.). Other Material Systems. Oxygen-doped and nitrogen-doped silicon films prepared by molecular beam epitaxy (M. Tabe et al.). Properties of diamond structure SnGe films grown by molecular beam epitaxy (A. Harwit et al.). Si-MBE: Prospects and Challenges. Prospects and challenges for molecular beam epitaxy in silicon very-large-scale integration (W. Eccleston). Prospects and challenges for SiGe strained-layer epitaxy (T.P. Pearsall). Author Index.

    • Few Particle Problems

      • 1st Edition
      • December 2, 2012
      • Ivo Slaus
      • English
      • eBook
        9 7 8 0 4 4 4 6 0 1 1 2 4
      Few Particle Problems in the Nuclear Interaction emerged from the International Conference on Few Particle Problems in the Nuclear Interaction held in Los Angeles, from August 28-September 1, 1972. The aim of the conference was to discuss recent developments in low and medium energy few-particle problems. This included the fields of the nuclear three-body problem; nuclear forces (in particular, three-body forces); symmetries; and the interaction of mesons, leptons, and photons with few-nucleon systems. Special sessions were also devoted to the application of the results and techniques of the few-particle research to the problems of other fields, in particular nuclear structure and astrophysics. The conference was organized into nine plenary sessions and 13 parallel sessions. This volume contains 184 papers presented during the nine sessions on the following topics: the nucleon-nucleon interaction; three-body forces; hypernuclear systems; symmetries; three-body problems; multiparticle reactions; proposed studies of few-nucleon systems with meson factories; few-nucleon systems and leptons, mesons, and photons; and applications.

    • C, H, N and O in Si and Characterization and Simulation of Materials and Processes

      • 1st Edition
      • Volume 56
      • December 2, 2012
      • A. Borghesi + 4 more
      • English
      • Paperback
        9 7 8 0 4 4 4 5 6 7 2 8 4
      • eBook
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      Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry.The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.

    • Modifications Induced by Irradiation in Glasses

      • 1st Edition
      • Volume 29
      • December 2, 2012
      • P. Mazzoldi
      • English
      • Paperback
        9 7 8 0 4 4 4 5 6 7 5 8 1
      • eBook
        9 7 8 0 4 4 4 5 9 6 8 4 0
      Many aspects of the interaction of radiation with glasses are reviewed in this volume, with contributions from a broad scientific community. Several of the papers focus on the interdisciplinary approach required to connect technological applications to the basic interactions of energetic ions with insulators, reporting on the challenging problems that still remain to be solved. The high quality of these contributions once again demonstrates that the E-MRS is an efficient forum for interaction between research workers and industry. The proceedings represent an ideal bridge between the sixth and the planned seventh International Conference on Radiation Effects in Insulators to be held in Japan in 1993.

    • Light Scattering Near Phase Transitions

      • 1st Edition
      • December 2, 2012
      • H.Z. Cummins + 1 more
      • English
      • Paperback
        9 7 8 0 4 4 4 5 6 8 6 3 2
      • eBook
        9 7 8 0 4 4 4 5 9 9 8 5 8
      Since the development of the laser in the early 1960's, light scattering has played an increasingly crucial role in the investigation of many types of phase transitions and the published work in this field is now widely dispersed in a large number of books and journals.A comprehensive overview of contemporary theoretical and experimental research in this field is presented here. The reviews are written by authors who have actively contributed to the developments that have taken place in both Eastern and Western countries.

    • Few body dynamics

      • 1st Edition
      • December 2, 2012
      • Asoke Mitra
      • English
      • Paperback
        9 7 8 0 4 4 4 5 6 9 1 4 1
      • eBook
        9 7 8 0 4 4 4 6 0 1 0 9 4
      Few Body Dynamics presents the proceedings of the VII International Conference on Few Body Problems in Nuclear and Particle Physics, held in Delhi from December 29, 1975 to January 3, 1976. Invited speakers talked about topics ranging from dynamic equations and approximation methods to computation and experimental techniques, few body bound states, breakup reactions and polarization, few electron systems, and photon and electron probes on few body systems. Speakers also covered few body reactions with mesons and resonances, few body aspects of nuclear reactions and scattering, three body forces in nuclei, and quark physics. Comprised of four parts encompassing 145 chapters, this volume summarizes the status and results from experimental facilities such as the Bhabha Atomic Research Centre in India, TRIUMF in Canada, and the Clinton P. Anderson Meson Physics Facility in the United States. It also discusses completeness relations in scattering theory for non-Hermitian potentials, ambiguities in phase-shift analysis, and parametrization of the half-shell function when the eigenchannel has a bound state. The next chapters focus on possible phenomenological forms for the two-body local potential, nuclear three-body forces arising from triple-boson couplings, and concepts such as N-particle transit operators, three-body separable expansion amplitude, the three-body problem with energy-dependent potentials, and the four-body problem. The book also introduces the reader to triton with realistic potentials, backward proton-deuteron scattering, and deep inelastic lepton-nucleon interactions at high energy. This book will benefit physicists, students, and researchers who want to learn about the dynamics of few body systems.

    • Turbulence and Nonlinear Dynamics in MHD Flows

      • 1st Edition
      • December 2, 2012
      • M. Meneguzzi + 2 more
      • English
      • Paperback
        9 7 8 0 4 4 4 5 6 8 2 3 6
      • eBook
        9 7 8 0 4 4 4 5 9 8 7 3 8
      Topics discussed at this international workshop include: magnetic fields in astrophysical flows, slow and fast dynamos, MHD turbulence in space plasmas and in the laboratory, exact solutions to MHD, topology and chaos in MHD, helicity and velocity-magnetic correlations, turbulent reconnection and non-magnetic flows.

    • High Field Magnetism

      • 1st Edition
      • December 2, 2012
      • M. Date
      • English
      • Paperback
        9 7 8 0 4 4 4 5 6 8 4 6 5
      • eBook
        9 7 8 0 4 4 4 5 9 9 1 9 3
      High Field Magnetism presents the proceedings of the International Symposium on High Field Magnetism held at the Osaka University and Hotel Plaza in Osaka on September 13-14, 1982 as a satellite symposium of the International Conference on Magnetism-1982-Kyoto... The symposium tackled a wide variety of high field generation methods and material systems, with magnetism orientation as the main objective. A special Technical Exposition was held in the poster session where representatives from MIT, Grenoble, and other high field facilities were invited to give a descriptive review of each laboratory. This book is divided into eight parts, beginning with an introductory chapter into the subject of high field magnetism. The succeeding parts focus on magnetic interactions and phase transitions in high magnetic fields; metals and alloys in high magnetic fields; high field superconductivity; spin and charge fluctuations in high magnetic fields; high field magneto-optics; high field magnetic resonance; and high magnetic field facilities and techniques. This book will be of interest to practitioners in the fields of cryogenic engineering and applied physics.

    • Band Structure And Nuclear Dynamics

      • 1st Edition
      • December 2, 2012
      • A.L. Goodman
      • English
      • Paperback
        9 7 8 0 4 4 4 5 6 9 9 6 7
      • eBook
        9 7 8 0 4 4 4 6 0 1 3 7 7
      Band Structure and Nuclear Dynamics contains a compilation of papers that were presented at the International Conference on Band Structure and Nuclear Dynamics. This volume examines the relationships between phenomenological models, such as the VMI, IBA and Bohr-Mottelson models, and it discusses the attempts to provide microscopic foundations for these models. It also reviews other boson expansion techniques. The book includes the experiments on rotating nuclei, which indicate that different phases, shapes, and angular momentum coupling schemes are suitable for different spin regions and different bands; and the HFB-cranking model, which provides a theoretical framework for the interpretation of these rotational phenomena. This volume is subdivided into six parts. The first part focuses on phenomenological collective models, including the theory of nuclear collective motion, VMI and other related models, and the boson-fermion model. Part two discusses strongly deformed nuclei, including the band structure and the structure of the collective bands in it from a microscopic point of view. This part also presents the Hartree-Fock-Bogoliu... theory and the application of the cranking model to Yb bands and band crossings. The third part focuses on transitional nuclei and covers IBA models, symmetric rotor interpretation of interpretation of transitional nuclei, electromagnetic properties of excited bands, and boson models. Part four describes the very high spin states and its Nilsson-Strutinsky model and self-consistent theory. Part five includes three special topics and Part six concludes by providing topics for a round-table discussion.

    • Introduction to Solid State Electronics

      • 2nd Edition
      • December 2, 2012
      • F.F.Y. Wang
      • English
      • Paperback
        9 7 8 0 4 4 4 5 6 8 2 0 5
      • eBook
        9 7 8 0 4 4 4 5 9 8 7 0 7
      This textbook is specifically tailored for undergraduate engineering courses offered in the junior year, providing a thorough understanding of solid state electronics without relying on the prerequisites of quantum mechanics. In contrast to most solid state electronics texts currently available, with their generalized treatments of the same topics, this is the first text to focus exclusively and in meaningful detail on introductory material. The original text has already been in use for 10 years. In this new edition, additional problems have been added at the end of most chapters. These problems are meant not only to review the material covered in the chapter, but also to introduce some aspects not covered in the text.An amended Solutions Manual is in preparation.

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