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Surfaces and Interfaces: Physics and Electronics
- 1st Edition - December 2, 2012
- Editor: R.S. Bauer
- Language: English
- Paperback ISBN:9 7 8 - 0 - 4 4 4 - 5 6 8 7 2 - 4
- eBook ISBN:9 7 8 - 0 - 4 4 4 - 6 0 0 1 6 - 5
Surfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for… Read more
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Request a sales quoteSurfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for Theoretical Physics in Trieste, Italy on August 30 to September 3, 1982. The book focuses on the processes, methodologies, reactions, and approaches involved in semiconductor physics. The selection first elaborates on the electronic properties and surface geometry of GaAs and ZnO surfaces; electronic structure of Si (III) surfaces; and photoemission studies of surface states on Si (III) 2X1. Discussions focus on consistency of different experiments, relating experiments to a theoretical model, quenching of surface states by hydrogen, inverse photoemission results, and basic data and models of the low-index ZnO surfaces. The text then examines Si (III) 2X1 studies by angle resolved photoemission; electronic surface states at steps in Si (III) 2X1; and a novel method for the study of optical properties of surfaces. The manuscript takes a look at spot profile analysis (LEED) of defects at silicon surfaces; chemisorption-induced defects at interfaces on compound semiconductors; and surface defects on semiconductors. The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed. The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor physics.
Preface
Introduction
Dependence of Electronic Properties on Surface Geometry
Electronic Properties and Surface Geometry of GaAs and ZnO Surfaces
Electronic Structure of Si(111) Surfaces
Photoemission Studies of Surface States on Si(111) 2 × l
Si(111) 2 × 1 Studies by Angle Resolved Photoemission
The π-Bonded Chain Model for Si(111)-(2 × 1) in View of Recent Wavevector-Resolved Electron Energy Loss Spectra
The Mott Insulator Model of the Si(111)-(2 × 1) Surface
Electronic Surface States at Steps in Si(111) 2 × l
A Novel Method for the Study of Optical Properties of Surfaces
Low Temperature Leed and Electric Conductivity Measurements for Cleaved Si(111) Surfaces
Surface Defects
Spot Profile Analysis (LEED) of Defects at Silicon Surfaces
Chemisorption-Induced Defects at Interfaces on Compound Semiconductors
Surface Defects on Semiconductors
Transition from Chemisorption to Stable Interface Structure
The Formation of Interfaces on GaAs and Related Semiconductors: A Reassessment
Physics and Electronics of the Noble-Metal/Elemental-Semiconductor Interface Formation: A Status Report
Local Structure of Adsorbates on Semiconductor Surfaces Using SEXAFS: A Brief Summary
Systematics of Schottky Barriers
Systematics of Chemical Structure and Schottky Barriers at Compound Semiconductor-Metal Interfaces
Schottky Barriers: Model and "Tests"
Schottky Barrier Amorphous-Crystalline Interface Formation
Computer Modeling of High Barrier Schottky Diodes Applied to Study of the Accuracy of Experimental Barrier Determination
Silicide Interface Structure
Microscopic Properties and Behavior of Suicide Interfaces
The Electron States in the Si(111)-Pd Interface: Towards a Reassessment of the Experimental Information
Si-Cr and Si-Pd Interface Reaction and Bulk Electronic Structure of Ti, V, Cr, Co, Ni, and Pd Suicides
Simple Dipole Model for Barrier Heights of Suicide-Silicon and Metal-Silicon Barriers
Formation of Semiconductor Interfaces
Far from Equilibrium Vapour Phase Growth of Lattice Matched III-V Compound Semiconductor Interfaces: Some Basic Concepts and Monte-Carlo Computer Simulations
Growth and Doping of Gallium Arsenide Using Molecular Beam Epitaxy (MBE): Thermodynamic and Kinetic Aspects
Trap States at Interfaces
Surface Fermi Level of III-V Compound Semiconductor-Dielectric Interfaces
Recombination at Semiconductor Surfaces and Interfaces
Interface States at the SiO2-Si Interface
Dipoles, Defects and Interfaces
Traps at Interfaces Between GaAs n-Type LPE Layers and Different Substrates
Heterostructures and Superlattices
The Heterojunction Parameters from a Microscopic Point of View
On the Adjustability of the "Abrupt" Heterojunction Band-Gap Discontinuity
Effect of Temperature on the Ge/GaAs(110) Interface Formation
Valence-Band Discontinuities for Abrupt (110), (100), and (111) Oriented Ge-GaAs Heterojunctions
Electron Mobilities in Modulation-Doped GaAs-(AlGa)As Heterostructures
New Device Applications of Bandedge Discontinuities in Multilayer Heterojunction Structures
Semiconductors with Hetero-n-i-p-i Superlattices
Effects of Interfaces in Submicron Structures
Heterostructure Devices: A Device Physicist Looks at Interfaces
Carrier Confinement Effects
The Role of Boundaries on High Speed Compound Semiconductor Devices
Injection Dependence of Quasiballistic Transport in GaAs at 77 Κ
Author Index
Subject Index
- No. of pages: 660
- Language: English
- Edition: 1
- Published: December 2, 2012
- Imprint: North Holland
- Paperback ISBN: 9780444568724
- eBook ISBN: 9780444600165
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