This conference consisted of 15 oral sessions, including three plenary papers covering areas of general interest, 22 specialist invited papers and 51 contributed presentations as well as three poster sessions. There were several scientific highlights covering a diverse spectrum of materials and ion beam processing methods. These included a wide range of conventional and novel applications such as: optical displays and opto-electronics, motor vehicle and tooling parts, coatings tailored for desired properties, studies of fundamental defect properties, the production of novel (often buried) compounds, and treating biomedical materials. The study of nanocrystals produced by ion implantation in a range of host matrices, particularly for opto-electronics applications, was one especially new and exciting development. Despite several decades of study, major progress was reported at the conference in understanding defect evolution in semiconductors and the role of defects in transient impurity diffusion. The use of implantation to tune or isolate optical devices and in forming optically active centres and waveguides in semiconductors, polymers and oxide ceramics was a major focus of several presentations at the conference. The formation of hard coatings by ion assisted deposition or direct implantation was also an area which showed much recent progress. Ion beam techniques had also developed apace, particularly those based on plasma immersion ion implantation or alternative techniques for large area surface treatment. Finally, the use of ion beams for the direct treatment of cancerous tissue was a particularly novel and interesting application of ion beams.
Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. New structures and possible approaches are described. The implications for ion implantation technology as well as additional observations of needs and opportunities are discussed. The volume will be of value to all those who are interested in acquiring a more complete understanding of the current developments in ion implantation processes and comprehensive implant models.
Many aspects of the interaction of radiation with glasses are reviewed in this volume, with contributions from a broad scientific community. Several of the papers focus on the interdisciplinary approach required to connect technological applications to the basic interactions of energetic ions with insulators, reporting on the challenging problems that still remain to be solved. The high quality of these contributions once again demonstrates that the E-MRS is an efficient forum for interaction between research workers and industry. The proceedings represent an ideal bridge between the sixth and the planned seventh International Conference on Radiation Effects in Insulators to be held in Japan in 1993.
Ultraviolet and Visible Absorption Spectra, Index for 1930-1954 is a reference volume listing of ultraviolet and visible absorption spectra in the literature. This book contains about 32,000 references to published absorption spectra in 27 important American and European journals and one book. The index is arranged according to the compounds whose spectra are given. The indexing arrangement is roughly similar to that used in Chemical Abstracts, although it has not been practical to conform to Chemical Abstracts nomenclature throughout. Wherever possible, all references for a particular compound have been listed under a single name, but there will be some instances where listings for the compound may be found under several different names. The rules used by Chemical Abstracts have been followed where practical, but some inconsistencies will be found. Researchers in the fields of organic, inorganic, and analytical chemistry will find this Index a great value.
Most books on the theory and analysis of beams and plates deal with the classical (Euler-Bernoulli/Kirchoff) theories but few include shear deformation theories in detail. The classical beam/plate theory is not adequate in providing accurate bending, buckling, and vibration results when the thickness-to-length ratio of the beam/plate is relatively large. This is because the effect of transverse shear strains, neglected in the classical theory, becomes significant in deep beams and thick plates. This book illustrates how shear deformation theories provide accurate solutions compared to the classical theory. Equations governing shear deformation theories are typically more complicated than those of the classical theory. Hence it is desirable to have exact relationships between solutions of the classical theory and shear deformation theories so that whenever classical theory solutions are available, the corresponding solutions of shear deformation theories can be readily obtained. Such relationships not only furnish benchmark solutions of shear deformation theories but also provide insight into the significance of shear deformation on the response. The relationships for beams and plates have been developed by many authors over the last several years. The goal of this monograph is to bring together these relationships for beams and plates in a single volume. The book is divided into two parts. Following the introduction, Part 1 consists of Chapters 2 to 5 dealing with beams, and Part 2 consists of Chapters 6 to 13 covering plates. Problems are included at the end of each chapter to use, extend, and develop new relationships.
Advances in Imaging & Electron Physics merges two long-running serials--Advances in Electronics & Electron Physics and Advances in Optical & Electron Microscopy. The series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science and digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains.
Containing the proceedings of three symposia in the E-MRS series this book is divided into two parts. Part one is concerned with ion beam processing, a particularly powerful and versatile technology which can be used both to synthesise and modify materials, including metals, semiconductors, ceramics and dielectrics, with great precision and excellent control. Furthermore it also deals with the correlated effects in atomic and cluster ion bombardment and implantation.Part two deals with the deposition techniques, characterization and applications of advanced ceramic, metallic and polymeric coatings or thin films for surface protection against corrosion, erosion, abrasion, diffusion and for lubrication of contracting surfaces in relative motion.
In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.
Ion beam processing is a means of producing both novel materials and structures. The contributions in this volume strongly focus on this aspect and include many papers reporting on the modification of the electrical and structural properties of the target materials, both metals and semiconductors, as well as the synthesis of buried and surface compound layers. Many examples on the applications of high energy and high dose ion implantation are also given. All of the papers from Symposia C and D are presented in this single volume because the interests of many of the participants span both topics. Additionally many of the materials science aspects, including experimental methods, equipment and processing problems, diagnostic and analytical techniques are common to both symposia.