Ion Implantation Technology - 94
- 1st Edition - May 16, 1995
- Imprint: North Holland
- Editors: S. Coffa, G. Ferla, E. Rimini, F. Priolo
- Language: English
- eBook ISBN:9 7 8 - 0 - 4 4 4 - 5 9 9 7 2 - 8
The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as… Read more
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Request a sales quoteThe aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.
The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.
Editorial. Part I. Section I. Advanced implanters and process control. Invited papers: Ion implantation from the past and into the future (S. Moffatt). Negative-ion implantation technique (J. Ishikawa et al.). Charge neutralization in ion implanters (D.L. Smatlak, M.E. Mack, S. Mehta). Section II. Profiles and modelling. Invited papers: On the determination of two-dimensional carrier distributions (W. Vandervorst et al.). Improved delineation technique for two dimensional dopant profiling (L. Gong et al.). Section III. Materials science: silicon. Invited papers: Implantation and transient boron diffusion: the role of the silicon self-interstital (P.A. Stolk et al.). Studies of point defect/dislocation loop interaction processses in silicon (K.S. Jones et al.). On the relation between dopant anomalous diffusion in Si and end-of-range defects (A. Claverie et al.). Section IV. Materials science: compounds and alloys. Invited papers: Ion-beam induced relaxation of strained GexSi1-x layers (P. Kringhøj, J.M. Glasko, R.G. Elliman). Thermodynamic behaviour of GeO2 formed by oxygen implantation into relaxed Si0.5 alloy (J.P. Zhang et al.). Section V. Materials science: silicides. Invited paper: Ion beam synthesis of yttrium silicides in (111)Si (S. Jin et al.). Section VI. Materials science: optoelectronics. Invited paper: Ion implantation for optical applications (Ch. Buchal). Section VII. New applications in processing and devices. Invited paper: Application of advanced ion implantation techniques to Flash memories (P. Cappelletti, L. Fratin, L. Ravazzi).
Part II. Section I. Advanced implanter systems. Section II. Subsystems and components. Section III. Process control. Section IV. Ion-solid interactions. Section V. Materials science: silicon. Section VI. Materials science: Alloys and compounds. Section VII. Materials science: silicides. Section VIII. New applications in processing and devices. Author index.
- Edition: 1
- Published: May 16, 1995
- Imprint: North Holland
- No. of pages: 1030
- Language: English
- eBook ISBN: 9780444599728
GF
G. Ferla
Affiliations and expertise
Università di Catania, Catania, ItalyFP
F. Priolo
Affiliations and expertise
INFM and Department of Physics, University of Catania, Italy