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    • Dielectric Metamaterials

      • 1st Edition
      • November 12, 2019
      • Igal Brener + 4 more
      • English
      • Paperback
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      • eBook
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      Dielectric Metamaterials: Fundamentals, Designs, and Applications links fundamental Mie scattering theory with the latest dielectric metamaterial research, providing a valuable reference for new and experienced researchers in the field. The book begins with a historical, evolving overview of Mie scattering theory. Next, the authors describe how to apply Mie theory to analytically solve the scattering of electromagnetic waves by subwavelength particles. Later chapters focus on Mie resonator-based metamaterials, starting with microwaves where particles are much smaller than the free space wavelengths. In addition, several chapters focus on wave-front engineering using dielectric metasurfaces and the nonlinear optical effects, spontaneous emission manipulation, active devices, and 3D effective media using dielectric metamaterials.

    • Silicon Molecular Beam Epitaxy

      • 1st Edition
      • Volume 10A
      • December 2, 2012
      • Erwin Kasper + 1 more
      • English
      • Paperback
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      • eBook
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      This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy.A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy (J.-E. Sundgren et al.). Influence of substrate orientation on surface segregation process in silicon-MBE (K. Nakagawa et al.). Growth and transport properties of SimSb1 (H. Jorke, H. Kibbel). Author Index. Volume. II. In-situ electron microscope studies of lattice mismatch relaxation in GexSi1-x/Si heterostructures (R. Hull et al.). Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1-x/Si strained layer superlattices (D.D. Perovic et al.). Silicon Growth. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy (P.J. Grunthaner et al.). Interaction of structure with kinetics in Si(001) homoepitaxy (S. Clarke et al.). Surface step structure of a lens-shaped Si(001) vicinal substrate (K. Sakamoto et al.). Photoluminescence characterization of molecular beam epitaxial silicon (E.C. Lightowlers et al.). Doping. Boron doping using compound source (T. Tatsumi). P-type delta doping in silicon MBE (N.L. Mattey et al.). Modulation-doped superlattices with delta layers in silicon (H.P. Zeindell et al.). Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers (N. Djebbar et al.). Alternative Growth Methods. Limited reaction processing: growth of Si/Si1-xGex for heterojunction bipolar transistor applications (J.L. Hoyt et al.). High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition (M.L. Green et al.). Epitaxial growth of single-crystalline Si1-xGex on Si(100) by ion beam sputter deposition (F. Meyer et al.). Phosphorus gas doping in gas source silicon-MBE (H. Hirayama, T. Tatsumi). Devices. Narrow band gap base heterojunction bipolar transistors using SiGe alloys (S.S. Iyer et al.). Silicon-based millimeter-wave integrated circuits (J-F. Luy). Performance and processing line integration of a silicon molecular beam epitaxy system (A.A. van Gorkum et al.). Silicides. Reflection high energy electron diffraction study of Cosi2/Si multilayer structures (Q. Ye at al.). Epitaxy of metal silicides (H. von Kanel et al.). Epitaxial growth of ErSi2 on (111)si (D. Loretto et al.). Other Material Systems. Oxygen-doped and nitrogen-doped silicon films prepared by molecular beam epitaxy (M. Tabe et al.). Properties of diamond structure SnGe films grown by molecular beam epitaxy (A. Harwit et al.). Si-MBE: Prospects and Challenges. Prospects and challenges for molecular beam epitaxy in silicon very-large-scale integration (W. Eccleston). Prospects and challenges for SiGe strained-layer epitaxy (T.P. Pearsall). Author Index.

    • Silicon Processing for Photovoltaics II

      • 1st Edition
      • December 2, 2012
      • C.P. Khattak + 1 more
      • English
      • Paperback
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      • Hardback
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      • eBook
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      The processing of semiconductor silicon for manufacturing low cost photovoltaic products has been a field of increasing activity over the past decade and a number of papers have been published in the technical literature. This volume presents comprehensive, in-depth reviews on some of the key technologies developed for processing silicon for photovoltaic applications. It is complementary to Volume 5 in this series and together they provide the only collection of reviews in silicon photovoltaics available.The volume contains papers on: the effect of introducing grain boundaries in silicon; the commercial production for multicrystalline silicon ingots and ribbon; epitaxial solar cell fabrication; metallurgical approaches to producing low-cost meltstock; the non-conventional bifacial solar cell approach.

    • Solar Cell Device Physics

      • 2nd Edition
      • November 23, 2009
      • Stephen J. Fonash
      • English
      • Hardback
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      There has been an enormous infusion of new ideas in the field of solar cells over the last 15 years; discourse on energy transfer has gotten much richer, and nanostructures and nanomaterials have revolutionized the possibilities for new technological developments. However, solar energy cannot become ubiquitous in the world's power markets unless it can become economically competitive with legacy generation methods such as fossil fuels. The new edition of Dr. Stephen Fonash's definitive text points the way toward greater efficiency and cheaper production by adding coverage of cutting-edge topics in plasmonics, multi-exiton generation processes, nanostructures and nanomaterials such as quantum dots. The book's new structure improves readability by shifting many detailed equations to appendices, and balances the first edition's semiconductor coverage with an emphasis on thin-films. Further, it now demonstrates physical principles with simulations in the well-known AMPS computer code developed by the author.

    • Carbon Nanotechnology

      • 1st Edition
      • April 18, 2006
      • Liming Dai
      • English
      • Hardback
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      • eBook
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      Nanotechnology is no longer a merely social talking point and is beginning to affect the lives of everyone. Carbon nanotechnology as a major shaper of new nanotechnologies has evolved into a truly interdisciplinary field, which encompasses chemistry, physics, biology, medicine, materials science and engineering. This is a field in which a huge amount of literature has been generated within recent years, and the number of publications is still increasing every year. Carbon Nanotechnology aims to provide a timely coverage of the recent development in the field with updated reviews and remarks by world-renowned experts. Intended to be an exposition of cutting-edge research and development rather than a kind of conference proceeding, Carbon Nanotechnology will be very useful not only to experienced scientists and engineers, who wish to broaden their knowledge of the wide-ranging nanotechnology and/or to develop practical devices, but also to graduate and senior undergraduate students who look to make their mark in this field of the future.

    • Modern Aspects of Rare Earths and their Complexes

      • 1st Edition
      • December 9, 2003
      • Vinny R. Sastri + 4 more
      • English
      • Hardback
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      In order to use rare earths successfully in various applications, a good understanding of the chemistry of these elements is of paramount importance. Nearly three to four decades have passed since titles such as The Rare Earths edited by F.H. Spedding and A.H. Daane, The chemistry of the Rare Earth Elements by N.E. Topp and Complexes of the Rare Earths by S.P. Sinha were published. There have been many international conferences and symposia on rare earths, as well as the series of volumes entitled Handbook of Physics and Chemistry of Rare Earths edited by K.A. Gschneidner and L. Eyring. Thus, there is a need for a new title covering modern aspects of rare earth complexes along with the applications. The present title consists of twelve chapters. 1. Introduction2. General aspects3. Stability of complexes4. Lanthanide complexes5. Structural chemistry of lanthanide compounds6. Organometallic complexes7. Kinetics and mechanisms of rare earths complexation8. Spectroscopy of lanthanide complexes9. Photoelectron spectroscopy of rare earths10. Lanthanide NMR shift reagents11. Environmental ecological biological aspects12. Applications The authors studied in schools headed by pioneers in rare earth chemistry, have a combined experience of one hundred and fifty years in inorganic chemistry, rare earth complex chemistry, nuclear and radiochemistry of rare earths and supramolecular chemistry. The present monograph is a product of this rich experience.

    • Applied Nanotechnology

      • 1st Edition
      • April 1, 2000
      • Jeremy Ramsden
      • English
      • eBook
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      Applied Nanotechnology: The Conversion of Research Results to Products examines the commercial and social aspects of nanotechnology. The book is organized into four parts. Part 1 presents an overview of nanotechnology. It discusses the definition of nanotechnology; the relationship between wealth, technology, and science; the relationship between nanotechnology and innovation; and the question of why one might wish to introduce nanotechnology. Part 2 explains the nanotechnology business and the applications of nanotechnology in a wide range of industries, including engineering, aerospace, automotive, food, textiles, information technologies, and health. Part 3 deals with specific commercial and financial aspects. These include business models for nanotechnology enterprises, demand assessment for nanotechnology products, and the design of nanotechnology products. Part 4 looks at the future of nanotechnology. It examines how nanotechnology can contribute to the big challenges faced by humanity, such as climate change and terrorism. Ethical issues are also considered, including risk, uncertainty, and regulation.

    • Materials Science and Engineering Serving Society

      • 1st Edition
      • December 23, 1998
      • R.P.H. Chang + 3 more
      • English
      • Paperback
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      This symposium was organised with the aim of encouraging collaboration in international science and engineering communities for the benefit of human kind. It consisted of invited talks by experts on materials and poster presentation papers. Approximately 140 scientists participated and the resulting proceedings present an up-to-date review of the research in this area.

    • Solid State Ionics

      • 1st Edition
      • Volume 7
      • July 1, 1989
      • C. Julien + 1 more
      • English
      • Paperback
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      • Hardback
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      In recent years Solid State Ionics and Solid State Microbatteries have attracted considerable interest due to the important role which they may play in the future of microelectronics and eventually in other fields of energy storage. This volume presents papers on the theory, experiments and applications in this field including: Solid state microbatteries; Thin films solid state batteries; Fast ion conduction; Intercalation and lattice dynamics in layered materials; Electrochromes; Solid state diffusion; and Microsensors.