Methods of controlling mass concrete temperatures range from relatively simple to complex and from inexpensive too costly. Depending on a particular situation, it may be advantageous to use one or more methods over others. Based on the author’s 50 years of personal experience in designing mass concrete structures, Thermal Stresses and Temperature Control of Mass Concrete provides a clear and rigorous guide to selecting the right techniques to meet project-specific and financial needs. New techniques such as long time superficial thermal insulation, comprehensive temperature control, and MgO self-expansive concrete are introduced.
Modern plating technology is highly advanced, and has developed to cover a wide range of applications. In addition to the traditional use for surface finishing, plating technology can now offer novel processes to fabricate high-performance films or fine microstructural bodies in the microelectronics industry. This rapid progress reflects the potential for the electroplating plating method to become one of today's leading-edge technologies. This book will introduce a concept of a Microstructure Control Theory for plated films, describe and discuss various experimental results that support the theory, and finally, present a collection of experimental data on 53 types of plated metal/alloy systems with a special emphasis on their microstructure.The unique feature of this database is that most of the plating baths are simple and contain no additives. In addition, amorphous materials were used as substrates to avoid the effects of substrate structure, and single-crystal substrates were chosen to study the epitaxial growth phenomenon.
This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices.This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.
This comprehensive book containing essential information on the applicability of thermal analysis techniques to evaluate inorganic and organic materials in construction technology should serve as a useful reference for the scientist, engineer, construction technologist, architect, manufacturer, and user of construction materials, standard-writing bodies, and analytical chemists. The material scientists at the National Research Council of Canada have established one of the best thermal analysis laboratories in the world. Various types of thermal analysis techniques have been applied successfully to the investigation of inorganic and organic construction materials. These studies have provided important information on the characterization of raw as well as finished materials, quality control, quantitative estimation, interrelationships between physical, chemical, mechanical, and durability characteristics. Information on the application of thermal analysis to construction materials is dispersed in literature and hence the IRC scientists embarked on producing a handbook, the first of its kind, incorporating the latest knowledge available in this field of activity. Almost all important construction materials have been included.
This is a thoroughly revised version of the original book published in 1986. About half of the contents of the previous version remain essentially unchanged, and one quarter has been rewritten and updated. The rest consists of completely new and extended material. Recent research has focussed on new materials made through "molecular engineering", and computational materials science through ab initio electron structure calculations. Another trend is the ever growing interdisciplinary aspect of both basic and applied materials science. There is an obvious need for reviews that link well established results to the modern approaches. One purpose of this book is to provide such an overview in a specific field of materials science, namely thermophysical phenomena that are intimately connected with the lattice vibrations of solids. This includes, e.g., elastic properties and electrical and thermal transport. Furthermore, this book attempts to present the results in such a form that the reader can clearly see their domain of applicability, for instance if and how they depend on crystal structure, defects, applied pressure, crystal anisotropy etc. The level and presentation is such that the results can be immediately used in research. Graduate students in condensed matter physics, metallurgy, inorganic chemistry or geophysical materials will benefit from this book as will theoretical physicists and scientists in industrial research laboratories.
In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels.The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier capture by impurity centers,capture restricted by diffusion, multiphonon processes, Augerprocesses, effect of electric field on capture and thermalemission of carriers.