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Nonradiative Recombination in Semiconductors
- 1st Edition, Volume 33 - July 26, 1991
- Authors: V.N. Abakumov, V.I. Perel, I.N. Yassievich
- Language: English
- Paperback ISBN:9 7 8 - 0 - 4 4 4 - 5 6 9 0 2 - 8
- eBook ISBN:9 7 8 - 0 - 4 4 4 - 6 0 0 8 2 - 0
In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium… Read more
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Request a sales quoteIn recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels.
The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier capture by impurity centers,capture restricted by diffusion, multiphonon processes, Augerprocesses, effect of electric field on capture and thermalemission of carriers.
Preface to the series. Preface. Introduction. Chapters 1. Phenomenological theory of recombination. 2. Impurity centers. 3. Cascade capture by isolated attractive centers. 4. One-quantum transitions. 5. Experimental data on capture by attractive centers in Ge and Si. 6. Reciprocal influence of impurity centers. 7. Capture limited by diffusion. 8. Capture by repulsive centers. 9. Multiphonon capture and thermal emission. 10. Thermal emission and capture in an electric field. 11. Auger recombination. 12. Impurity Auger processes. Appendices. References. Author index. Subject index. Materials index. Cumulative index.
- No. of pages: 336
- Language: English
- Edition: 1
- Volume: 33
- Published: July 26, 1991
- Imprint: North Holland
- Paperback ISBN: 9780444569028
- eBook ISBN: 9780444600820
IY
I.N. Yassievich
Affiliations and expertise
A.F. Ioffe Physical-Technical Institute, Academy of Sciences of the USSR, Leningrad, U.S.S.R.