Books in Structure and properties of surfaces interfaces and thin films

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Surfaces and Interfaces: Physics and Electronics

• 1st Edition
• December 2, 2012
• R.S. Bauer
• English
• eBook 978-0-444-60016-5

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Surfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for Theoretical Physics in Trieste, Italy on August 30 to September 3, 1982. The book focuses on the processes, methodologies, reactions, and approaches involved in semiconductor physics. The selection first elaborates on the electronic properties and surface geometry of GaAs and ZnO surfaces; electronic structure of Si (III) surfaces; and photoemission studies of surface states on Si (III) 2X1. Discussions focus on consistency of different experiments, relating experiments to a theoretical model, quenching of surface states by hydrogen, inverse photoemission results, and basic data and models of the low-index ZnO surfaces. The text then examines Si (III) 2X1 studies by angle resolved photoemission; electronic surface states at steps in Si (III) 2X1; and a novel method for the study of optical properties of surfaces. The manuscript takes a look at spot profile analysis (LEED) of defects at silicon surfaces; chemisorption-induced defects at interfaces on compound semiconductors; and surface defects on semiconductors. The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed. The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor physics.

Silicon Molecular Beam Epitaxy

• 1st Edition
• Volume 10A
• December 2, 2012
• Erwin Kasper + 1 more
• English
• eBook 978-0-08-098368-4

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This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy.A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy (J.-E. Sundgren et al.). Influence of substrate orientation on surface segregation process in silicon-MBE (K. Nakagawa et al.). Growth and transport properties of SimSb1 (H. Jorke, H. Kibbel). Author Index. Volume. II. In-situ electron microscope studies of lattice mismatch relaxation in GexSi1-x/Si heterostructures (R. Hull et al.). Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1-x/Si strained layer superlattices (D.D. Perovic et al.). Silicon Growth. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy (P.J. Grunthaner et al.). Interaction of structure with kinetics in Si(001) homoepitaxy (S. Clarke et al.). Surface step structure of a lens-shaped Si(001) vicinal substrate (K. Sakamoto et al.). Photoluminescence characterization of molecular beam epitaxial silicon (E.C. Lightowlers et al.). Doping. Boron doping using compound source (T. Tatsumi). P-type delta doping in silicon MBE (N.L. Mattey et al.). Modulation-doped superlattices with delta layers in silicon (H.P. Zeindell et al.). Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers (N. Djebbar et al.). Alternative Growth Methods. Limited reaction processing: growth of Si/Si1-xGex for heterojunction bipolar transistor applications (J.L. Hoyt et al.). High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition (M.L. Green et al.). Epitaxial growth of single-crystalline Si1-xGex on Si(100) by ion beam sputter deposition (F. Meyer et al.). Phosphorus gas doping in gas source silicon-MBE (H. Hirayama, T. Tatsumi). Devices. Narrow band gap base heterojunction bipolar transistors using SiGe alloys (S.S. Iyer et al.). Silicon-based millimeter-wave integrated circuits (J-F. Luy). Performance and processing line integration of a silicon molecular beam epitaxy system (A.A. van Gorkum et al.). Silicides. Reflection high energy electron diffraction study of Cosi2/Si multilayer structures (Q. Ye at al.). Epitaxy of metal silicides (H. von Kanel et al.). Epitaxial growth of ErSi2 on (111)si (D. Loretto et al.). Other Material Systems. Oxygen-doped and nitrogen-doped silicon films prepared by molecular beam epitaxy (M. Tabe et al.). Properties of diamond structure SnGe films grown by molecular beam epitaxy (A. Harwit et al.). Si-MBE: Prospects and Challenges. Prospects and challenges for molecular beam epitaxy in silicon very-large-scale integration (W. Eccleston). Prospects and challenges for SiGe strained-layer epitaxy (T.P. Pearsall). Author Index.

High Tc Superconductor Thin Films

• 1st Edition
• December 2, 2012
• L. Correra
• English
• eBook 978-0-444-60025-7

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Interdisciplinary research on superconducting oxides is the main focus of the contributions in this volume. Several aspects of the thin film field from fundamental properties to applications are examined. Interesting results for the Bi system are also reviewed. The 132 papers, including 8 invited, report mainly on the 1-2-3 system, indicating that the Y-Ba-Cu-O and related compounds are still the most intensively studied materials in this field. The volume attests to the significant progress that has been made in this field, as well as reporting on the challenging problems that still remain to be solved.

Metallurgical Coatings and Thin Films 1991

• 1st Edition
• December 2, 2012
• G.E. McGuire + 2 more
• English
• eBook 978-0-444-59993-3

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The contributions in this two-volume set represent the work of over two hundred international researchers from universities, government laboratories and industry, with diverse backgrounds and interests in a wide range of coatings and thin film processes. The two hundred and six papers attest to the fact that Metallurgical Coatings is a rapidly growing field attracting experts from the large materials, scientific and technical community. The papers will be a useful and dynamic tool for those wishing to increase their knowledge on metallurgical coatings, as well as providing a guide to recent literature in this field.

Metallurgical Coatings and Thin Films 1992

• 1st Edition
• December 2, 2012
• G.E. McGuire + 2 more
• English
• eBook 978-0-444-59688-8

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One of the increasingly important requirements for high technology materials is that they possess near-surface properties different to their bulk properties. Specific surface properties are generally achieved through the use of these films or coatings or by modifying the structure or composition of the near surface. This two-volume work contains 157 papers covering a wide range of topics involving films, coatings, and modified surfaces. All aspects of the development of deposition technologies are addressed including basic research, applied research, applications development and full scale industrial production. The work will be of interest to materials scientists, physicists, electronic, chemical and mechanical engineers, and chemists.

Semiconductor Materials Analysis and Fabrication Process Control

• 1st Edition
• Volume 34
• December 2, 2012
• G.M. Crean + 2 more
• English
• eBook 978-0-444-59691-8

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There is a growing awareness that the successful implementation of novel material systems and technology steps in the fabrication of microelectronic and optoelectronic devices, is critically dependent on the understanding and control of the materials, the process steps and their interactions. The contributions in this volume demonstrate that characterisation and analysis techniques are an essential support mechanism for research in these fields. Current major research themes are reviewed both in the development and application of diagnostic techniques for advanced materials analysis and fabrication process control. Two distinct trends are elucidated: the emergence and evaluation of sophisticated in situ optical diagnostic techniques such as photoreflectance and spectroellipsometry and the industrial application of ultra-high sensitivity chemical analysis techniques for contamination monitoring. The volume will serve as a useful and timely overview of this increasingly important field.

Ion Beam Assisted Film Growth

• 1st Edition
• November 13, 2012
• T. Itoh
• English
• eBook 978-0-444-59908-7

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This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams. Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in this field.

Theory and Practice of Emulsion Technology

• 1st Edition
• November 12, 2012
• A.L. Smith
• English
• eBook 978-0-323-15437-6

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Theory and Practice of Emulsion Technology covers the proceedings of the Theory and Practice of Emulsion Technology Symposium, held at Brunel University on September 16-18, 1974. This book is organized into four sessions encompassing 19 chapters. The opening session deals with the emulsification process and emulsion polymerization, as well as the adsorption behavior of polyelectrolyte-stabilized emulsions. The following session examines the rheological properties, stability, and fluid mechanics of emulsions. This session also looks into the role of protein conformation and crude oil-water interfacial properties in emulsion stability. The third session highlights the preparation, formation, properties, and application of bitumen emulsions. The concluding session describes the process of spontaneous emulsification; the steric emulsion stabilization; the interfacial measurements of oil-in-water emulsions; and the influence of the disperse phase on emulsion stability. This book will be of value to chemists, chemical and process engineers, and researchers.

Vacuum Technology, Thin Films, and Sputtering

• 1st Edition
• November 12, 2012
• R. V. Stuart
• English
• eBook 978-0-323-13915-1

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Vacuum technology is advancing and expanding so rapidly that a major difficulty for most companies in the field is finding qualified technicians needed for expansion and as replacements. The only recourse for most companies is to hire capable, though untrained, people to train them in-house. One of the problems in this course of action is that it repeatedly draws on the valuable time of experienced personnel to explain fundamental concepts to a trainee.

Thin Film Processes

• 1st Edition
• November 12, 2012
• John L. Vossen
• English
• eBook 978-0-323-13898-7

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Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.