Thin Films and Epitaxy
A. Basic Techniques
- 1st Edition, Volume 3A-3B - December 23, 1994
- Editor: D. T. J. Hurle
- Language: English
Part A reviews the basic techniques of halide, organometallic and molecular beam epitaxy, liquid and solid phase epitaxial techniques, rapid solidification by pulsed laser… Read more
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Part B covers the underlying mechanisms and dynamics of epitaxial growth processes including nucleation, structural, kinetic and transport effects. In addition, refinements of some of the growth techniques described in Part A such as atomic layer, migration-enhanced and photo-assisted epitaxial processes are also described.
Part B. Growth Mechanisms and Dynamics 11. Kinetic processes in vapour growth (A.A. Chernov). 12. Organometallic vapor phase epitaxy reaction kinetics (G.B. Stringfellow). 13. Transport phenomena in vapor phase epitaxy reactors (K.F. Jensen). 14. Atomic layer epitaxy (T. Suntola). 15. Nucleation and surface diffusion in molecular beam epitaxy (T. Nishinaga). 16. Migration-enhanced epitaxy (Y. Horikoshi). 17. Metalorganic vapour phase epitaxial growth of ultra-thin quantum wells and heterostructures (L. Samuelson, W. Seifert). 18. Photoassisted epitaxy (S.J.C. Irvine). 19. In situ optical studies of epitaxial growth (C. Pickering). 20. Atomic mechanisms in semiconductor liquid phase epitaxy (E. Bauser). 21. Artificial epitaxy (graphoepitaxy) (E.I. Givargizov). 22. Structural effects in coherent epitaxial semiconductor films (A. Zunger).
- Edition: 1
- Volume: 3A-3B
- Published: December 23, 1994
- Language: English