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Handbook of Crystal Growth
Thin Films and Epitaxy
- 2nd Edition, Volume 3A-3B - November 2, 2014
- Editor: Tom Kuech
- Language: English
- Hardback ISBN:9 7 8 - 0 - 4 4 4 - 6 3 3 0 4 - 0
- eBook ISBN:9 7 8 - 0 - 4 4 4 - 6 3 3 0 5 - 7
Volume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, pre… Read more
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Handbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.
Volume IIIB Materials, Processes, and Technology
Handbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.
Handbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.
Volume IIIB Materials, Processes, and Technology
Handbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.
Volume IIIA Basic Techniques
- Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes.
- Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth
- Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process
Volume IIIB Materials, Processes, and Technology
- Describes atomic level epitaxial deposition and other low temperature growth techniques
- Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials
- Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials
Scientists and engineers from diverse (academic/industrial) backgrounds including crystal growers, physicists, chemists, engineers, bioengineers, solid state scientists, materials scientists, earth scientists, etc.
General Preface
Preface to Volume III
List of Contributors
Part A. Basic Techniques
1. Epitaxy for Energy Materials
1.1. Introduction
1.2. The Epitaxial Methods
1.3. Epitaxial Processes for High-Efficiency III–V Solar Cells
1.4. Thin-Film Silicon Solar Cells
1.5. Germanium Layers on Glass
1.6. Epitaxial Processes for Thermo-Photovoltaic Devices
2. Hydride Vapor Phase Epitaxy for Current III–V and Nitride Semiconductor Compound Issues
2.1. Introduction
2.2. Overview of the HVPE Process
2.3. Morphology-Controlled Growth at the Micrometer and Submicrometer Scales
2.4. HVPE Growth of NWs
2.5. Conclusion
3. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)
3.1. Introduction
3.2. The Science of MOVPE—Fundamental Aspects
3.3. The Role of Impurities
3.4. Growth System Considerations
3.5. Conclusions
4. Principles of Molecular Beam Epitaxy
4.1. Introduction
4.2. Description of MBE Equipment
4.3. MBE Growth Process
4.4. III-V Alloy Growth
4.5. Doping of III-V Materials
4.6. Growth of Highly Mismatched Alloys
4.7. Summary
5. Molecular Beam Epitaxy with Gaseous Sources
5.1. Introduction
5.2. MBE Growth System
5.3. GSMBE Growth for III–V Semiconductors
5.4. MOMBE/CBE Growth for III–V Semiconductors
5.5. Summary
6. Liquid-Phase Epitaxy
6.1. Introduction
6.2. Historical Perspective
6.3. Phase Equilibria Modeling
6.4. Doping and Impurity Control
6.5. Driving Forces for Crystal Growth in LPE
6.6. Substrate Surface Preparation for LPE
6.7. LPE Instrumentation, Control and In situ Analysis
6.8. Melt Convection
6.9. Heteroepitaxy
6.10. LPE Growth Mechanisms and Layers with Atomically Smooth Surfaces
6.11. Quantum Wells, Superlattice, and Nanostructures by LPE
6.12. Growth of Thick Ternary and Quaternary Alloy Layers for “Virtual” Substrates with Adjustable Lattice Parameters
6.13. Selective Epitaxy and Epitaxial Lateral Overgrowth
6.14. LPE for Shaped Crystal Growth
6.15. Silicon and SiGe LPE and Solution Growth with Main Applications to Solar Cells
6.16. Silicon Carbide LPE
6.17. III-V Nitride LPE
6.18. Conclusion and Outlook
7. Solid-Phase Epitaxy
7.1. Introduction and Background
7.2. Experimental Methods
7.3. Solid-Phase Epitaxy in Si and Ge
7.4. Atomistic Models
7.5. Defects Formed during Solid-Phase Epitaxy
7.6. Diffusion and Segregation of Impurities during Solid-Phase Epitaxy
7.7. SPE in Other Semiconductors
7.8. Summary
8. Pulsed Laser Deposition (PLD)
8.1. Typical Experimental PLD Setups
8.2. Physics and Chemistry of PLD
8.3. Application of PLD to Various Materials
8.4. Related Deposition Technologies
9. Vapor-Liquid-Solid Growth of Semiconductor Nanowires
9.1. Introduction
9.2. VLS Growth of Si Nanowires
9.3. VLS Growth of III–V Nanowires
10. Selective Area Masked Growth (Nano to Micro)
10.1. Introduction
10.2. Methodology of SAG
10.3. Applications of Selective Area Masked Growth
10.4. Summary
11. Organic van der Waals Epitaxy versus Templated Growth by Organic–Organic Heteroepitaxy
11.1. Organic van der Waals Epitaxy
11.2. Templated Growth by Organic–Organic Heteroepitaxy
12. Epitaxy of Small Organic Molecules
12.1. Introduction
12.2. Structure of Organic Small-Molecule Interfaces
12.3. Thermodynamics and Kinetics of Organic Epitaxy
12.4. Methods of Epitaxial Growth of Organic Molecular Crystals
12.5. Characterization of Organic Molecular Heterostructures
12.6. Conclusion
13. Epitaxial Growth of Oxide Films and Nanostructures
13.1. Introduction
13.2. Oxide Thin Film Growth
13.3. Lithography-Based Epitaxial Oxide Nanostructures
13.4. Template Synthesis and Deposition for Oxide Nanostructures
13.5. Three-Dimensional Deposition for Oxide Nanostructures
13.6. Self-assembled Nanocomposite Oxide Films
13.7. Summary
14. Epitaxy of Carbon-Based Materials: Diamond Thin Film
14.1. Introduction
14.2. Homoepitaxy of Diamond
14.3. Heteroepitaxy of Diamond
14.4. Summary and Conclusions
15. Magnetic Semiconductors
15.1. Introduction
15.2. III–V Magnetic Semiconductors
15.3. Other Magnetic Semiconductors and Related Materials
15.4. Summary
16. MOCVD of Nitrides
16.1. Introduction
16.2. Understanding the Growth of Nitrides by MOCVD
16.3. Summary
17. Molecular Beam Epitaxy of Nitrides for Advanced Electronic Materials
17.1. Introduction
17.2. Apparatus for Nitride MBE
17.3. PAMBE Growth of Advanced Electronic Nitride Materials
17.4. Ammonia-Assisted MBE Growth
18. Epitaxial Graphene
18.1. Introduction
18.2. Preliminaries: Band Structure
18.3. Graphene Synthesis on SiC
18.4. Overview of Graphene Synthesis on SiC
18.5. Practical Information on Graphene Synthesis and Properties
18.6. Formation on Si-Face
18.7. Formation on C-Face
18.8. Other Graphene Synthesis Approaches on SiC
18.9. Outlook
Part B. Materials, Processes, and Technology
19. Chemical Vapor Deposition of Two-Dimensional Crystals
19.1. Introduction
19.2. Chemical Vapor Deposition of Graphene
19.3. Chemical Vapor Deposition of Hexagonal Boron Nitride
19.4. Chemical Vapor Deposition of Molybdenum Disulfide
20. Kinetic Processes in Vapor Phase Epitaxy
20.1. Introduction to Thermodynamics and Kinetics
20.2. Intended Focus and Scope of Article
20.3. Atomistic Processes Involved in Thin-Film Growth
20.4. Closing Remarks
21. Metal Organic Vapor Phase Epitaxy Chemical Kinetics
21.1. Introduction to MOVPE
21.2. Thermochemical Aspects of the MOVPE Growth Process
21.3. Chemical Kinetic Processes within the MOVPE System
21.4. Reaction Kinetics of Organometallic Compounds
21.5. Reaction Kinetics of Group 15 Compounds
21.6. Growth Reactions
21.7. Conclusion
22. Transport Phenomena in Vapor Phase Epitaxy Reactors
22.1. Introduction
22.2. Basic Overview of Transport Phenomena during Vapor Phase Epitaxy
22.3. Overview of Production-Scale VPE Technologies and Reactors
22.4. Epitaxy of Silicon
22.5. Metal-Organic Vapor Phase Epitaxy of III-V Materials
22.6. Metal-Organic Vapor Phase Epitaxy of III-Nitrides
22.7. Epitaxy of SiC
22.8. Conclusions
23. Nucleation and Surface Diffusion in Molecular Beam Epitaxy
23.1. Introduction
23.2. Basic Understandings
23.3. Intersurface Diffusion
23.4. Fabrication and Control of Microstructures
24. Predicted Thermal- and Lattice-Mismatch Stresses
24.1. Introduction
24.2. Thermal Stress in an Elongated Film–Substrate Strip
24.3. Lattice-Mismatch Stresses in a Circular Film-Substrate Assembly
24.4. Conclusions
25. Low-Temperature and Metamorphic Buffer Layers
25.1. Introduction
25.2. Uniform Buffer Layers
25.3. Step-Graded Buffer Layers
25.4. Linearly-Graded Buffer Layers
25.5. Nonlinear Buffers
25.6. Superlattice Buffers
25.7. Low-Temperature Buffer Layers and Two-step Growth
25.8. Conclusion
26. Self-Assembly in Semiconductor Epitaxy: From Growth Mechanisms to Device Applications
26.1. Introduction
26.2. Self-Assembled Quantum Dots
26.3. Material Systems
26.4. Structural Characterization of Self-Assembled Structures
26.5. Electronic States and Optical Properties of Quantum Dots
26.6. Devices, Applications, and New Physics
26.7. Summary and Outlook
27. Atomic Layer Deposition
27.1. Thin Films and the Need for Precise Growth Control
27.2. From Atomic Layer Epitaxy to Atomic Layer Deposition
27.3. Basics of ALD
27.4. Materials, Precursors, and Co-reactants
27.5. ALD Chemistries
27.6. ALD Reactors
27.7. ALD Virtues and Practicalities
27.8. Conclusion
28. Silicon Carbide Epitaxy
28.1. Introduction
28.2. Crystal Structures of SiC
28.3. Fundamentals of SiC Epitaxy
28.4. Chemical Vapor Deposition
28.5. Doping Control
28.6. Extended Defects in 4H-SiC Epilayers
28.7. Point Defects (Deep Levels)
28.8. Fast Epitaxy
28.9. Homoepitaxy on Other Orientations
28.10. Other Techniques
28.11. Summary
29. In Situ Characterization of Epitaxy
29.1. Introduction
29.2. Measurement Modalities
29.3. Future Techniques
30. X-Ray and Electron Diffraction for Epitaxial Structures
30.1. Introduction
30.2. Diffraction Principles
30.3. Epitaxial Growth and Diffraction Characterization
30.4. Conclusion
31. Growth of III/Vs on Silicon: Nitrides, Phosphides, Arsenides and Antimonides
31.1. Introduction
31.2. Challenges of III/Vs on Silicon Heteroepitaxy
31.3. Si Surface Preparation
31.4. Growth of Nearly Lattice-Matched III/Vs on Silicon
31.5. Growth of Highly Mismatched III/Vs on Silicon
31.6. Summary
32. Heteroepitaxial Growth of Si, Si1−xGex-, and Ge-Based Alloy
32.1. Introduction
32.2. Crystal Growth
32.3. Strain, Dislocations, and Defects in Heteroepitaxial Layers
32.4. Conclusions
Index
Preface to Volume III
List of Contributors
Part A. Basic Techniques
1. Epitaxy for Energy Materials
1.1. Introduction
1.2. The Epitaxial Methods
1.3. Epitaxial Processes for High-Efficiency III–V Solar Cells
1.4. Thin-Film Silicon Solar Cells
1.5. Germanium Layers on Glass
1.6. Epitaxial Processes for Thermo-Photovoltaic Devices
2. Hydride Vapor Phase Epitaxy for Current III–V and Nitride Semiconductor Compound Issues
2.1. Introduction
2.2. Overview of the HVPE Process
2.3. Morphology-Controlled Growth at the Micrometer and Submicrometer Scales
2.4. HVPE Growth of NWs
2.5. Conclusion
3. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)
3.1. Introduction
3.2. The Science of MOVPE—Fundamental Aspects
3.3. The Role of Impurities
3.4. Growth System Considerations
3.5. Conclusions
4. Principles of Molecular Beam Epitaxy
4.1. Introduction
4.2. Description of MBE Equipment
4.3. MBE Growth Process
4.4. III-V Alloy Growth
4.5. Doping of III-V Materials
4.6. Growth of Highly Mismatched Alloys
4.7. Summary
5. Molecular Beam Epitaxy with Gaseous Sources
5.1. Introduction
5.2. MBE Growth System
5.3. GSMBE Growth for III–V Semiconductors
5.4. MOMBE/CBE Growth for III–V Semiconductors
5.5. Summary
6. Liquid-Phase Epitaxy
6.1. Introduction
6.2. Historical Perspective
6.3. Phase Equilibria Modeling
6.4. Doping and Impurity Control
6.5. Driving Forces for Crystal Growth in LPE
6.6. Substrate Surface Preparation for LPE
6.7. LPE Instrumentation, Control and In situ Analysis
6.8. Melt Convection
6.9. Heteroepitaxy
6.10. LPE Growth Mechanisms and Layers with Atomically Smooth Surfaces
6.11. Quantum Wells, Superlattice, and Nanostructures by LPE
6.12. Growth of Thick Ternary and Quaternary Alloy Layers for “Virtual” Substrates with Adjustable Lattice Parameters
6.13. Selective Epitaxy and Epitaxial Lateral Overgrowth
6.14. LPE for Shaped Crystal Growth
6.15. Silicon and SiGe LPE and Solution Growth with Main Applications to Solar Cells
6.16. Silicon Carbide LPE
6.17. III-V Nitride LPE
6.18. Conclusion and Outlook
7. Solid-Phase Epitaxy
7.1. Introduction and Background
7.2. Experimental Methods
7.3. Solid-Phase Epitaxy in Si and Ge
7.4. Atomistic Models
7.5. Defects Formed during Solid-Phase Epitaxy
7.6. Diffusion and Segregation of Impurities during Solid-Phase Epitaxy
7.7. SPE in Other Semiconductors
7.8. Summary
8. Pulsed Laser Deposition (PLD)
8.1. Typical Experimental PLD Setups
8.2. Physics and Chemistry of PLD
8.3. Application of PLD to Various Materials
8.4. Related Deposition Technologies
9. Vapor-Liquid-Solid Growth of Semiconductor Nanowires
9.1. Introduction
9.2. VLS Growth of Si Nanowires
9.3. VLS Growth of III–V Nanowires
10. Selective Area Masked Growth (Nano to Micro)
10.1. Introduction
10.2. Methodology of SAG
10.3. Applications of Selective Area Masked Growth
10.4. Summary
11. Organic van der Waals Epitaxy versus Templated Growth by Organic–Organic Heteroepitaxy
11.1. Organic van der Waals Epitaxy
11.2. Templated Growth by Organic–Organic Heteroepitaxy
12. Epitaxy of Small Organic Molecules
12.1. Introduction
12.2. Structure of Organic Small-Molecule Interfaces
12.3. Thermodynamics and Kinetics of Organic Epitaxy
12.4. Methods of Epitaxial Growth of Organic Molecular Crystals
12.5. Characterization of Organic Molecular Heterostructures
12.6. Conclusion
13. Epitaxial Growth of Oxide Films and Nanostructures
13.1. Introduction
13.2. Oxide Thin Film Growth
13.3. Lithography-Based Epitaxial Oxide Nanostructures
13.4. Template Synthesis and Deposition for Oxide Nanostructures
13.5. Three-Dimensional Deposition for Oxide Nanostructures
13.6. Self-assembled Nanocomposite Oxide Films
13.7. Summary
14. Epitaxy of Carbon-Based Materials: Diamond Thin Film
14.1. Introduction
14.2. Homoepitaxy of Diamond
14.3. Heteroepitaxy of Diamond
14.4. Summary and Conclusions
15. Magnetic Semiconductors
15.1. Introduction
15.2. III–V Magnetic Semiconductors
15.3. Other Magnetic Semiconductors and Related Materials
15.4. Summary
16. MOCVD of Nitrides
16.1. Introduction
16.2. Understanding the Growth of Nitrides by MOCVD
16.3. Summary
17. Molecular Beam Epitaxy of Nitrides for Advanced Electronic Materials
17.1. Introduction
17.2. Apparatus for Nitride MBE
17.3. PAMBE Growth of Advanced Electronic Nitride Materials
17.4. Ammonia-Assisted MBE Growth
18. Epitaxial Graphene
18.1. Introduction
18.2. Preliminaries: Band Structure
18.3. Graphene Synthesis on SiC
18.4. Overview of Graphene Synthesis on SiC
18.5. Practical Information on Graphene Synthesis and Properties
18.6. Formation on Si-Face
18.7. Formation on C-Face
18.8. Other Graphene Synthesis Approaches on SiC
18.9. Outlook
Part B. Materials, Processes, and Technology
19. Chemical Vapor Deposition of Two-Dimensional Crystals
19.1. Introduction
19.2. Chemical Vapor Deposition of Graphene
19.3. Chemical Vapor Deposition of Hexagonal Boron Nitride
19.4. Chemical Vapor Deposition of Molybdenum Disulfide
20. Kinetic Processes in Vapor Phase Epitaxy
20.1. Introduction to Thermodynamics and Kinetics
20.2. Intended Focus and Scope of Article
20.3. Atomistic Processes Involved in Thin-Film Growth
20.4. Closing Remarks
21. Metal Organic Vapor Phase Epitaxy Chemical Kinetics
21.1. Introduction to MOVPE
21.2. Thermochemical Aspects of the MOVPE Growth Process
21.3. Chemical Kinetic Processes within the MOVPE System
21.4. Reaction Kinetics of Organometallic Compounds
21.5. Reaction Kinetics of Group 15 Compounds
21.6. Growth Reactions
21.7. Conclusion
22. Transport Phenomena in Vapor Phase Epitaxy Reactors
22.1. Introduction
22.2. Basic Overview of Transport Phenomena during Vapor Phase Epitaxy
22.3. Overview of Production-Scale VPE Technologies and Reactors
22.4. Epitaxy of Silicon
22.5. Metal-Organic Vapor Phase Epitaxy of III-V Materials
22.6. Metal-Organic Vapor Phase Epitaxy of III-Nitrides
22.7. Epitaxy of SiC
22.8. Conclusions
23. Nucleation and Surface Diffusion in Molecular Beam Epitaxy
23.1. Introduction
23.2. Basic Understandings
23.3. Intersurface Diffusion
23.4. Fabrication and Control of Microstructures
24. Predicted Thermal- and Lattice-Mismatch Stresses
24.1. Introduction
24.2. Thermal Stress in an Elongated Film–Substrate Strip
24.3. Lattice-Mismatch Stresses in a Circular Film-Substrate Assembly
24.4. Conclusions
25. Low-Temperature and Metamorphic Buffer Layers
25.1. Introduction
25.2. Uniform Buffer Layers
25.3. Step-Graded Buffer Layers
25.4. Linearly-Graded Buffer Layers
25.5. Nonlinear Buffers
25.6. Superlattice Buffers
25.7. Low-Temperature Buffer Layers and Two-step Growth
25.8. Conclusion
26. Self-Assembly in Semiconductor Epitaxy: From Growth Mechanisms to Device Applications
26.1. Introduction
26.2. Self-Assembled Quantum Dots
26.3. Material Systems
26.4. Structural Characterization of Self-Assembled Structures
26.5. Electronic States and Optical Properties of Quantum Dots
26.6. Devices, Applications, and New Physics
26.7. Summary and Outlook
27. Atomic Layer Deposition
27.1. Thin Films and the Need for Precise Growth Control
27.2. From Atomic Layer Epitaxy to Atomic Layer Deposition
27.3. Basics of ALD
27.4. Materials, Precursors, and Co-reactants
27.5. ALD Chemistries
27.6. ALD Reactors
27.7. ALD Virtues and Practicalities
27.8. Conclusion
28. Silicon Carbide Epitaxy
28.1. Introduction
28.2. Crystal Structures of SiC
28.3. Fundamentals of SiC Epitaxy
28.4. Chemical Vapor Deposition
28.5. Doping Control
28.6. Extended Defects in 4H-SiC Epilayers
28.7. Point Defects (Deep Levels)
28.8. Fast Epitaxy
28.9. Homoepitaxy on Other Orientations
28.10. Other Techniques
28.11. Summary
29. In Situ Characterization of Epitaxy
29.1. Introduction
29.2. Measurement Modalities
29.3. Future Techniques
30. X-Ray and Electron Diffraction for Epitaxial Structures
30.1. Introduction
30.2. Diffraction Principles
30.3. Epitaxial Growth and Diffraction Characterization
30.4. Conclusion
31. Growth of III/Vs on Silicon: Nitrides, Phosphides, Arsenides and Antimonides
31.1. Introduction
31.2. Challenges of III/Vs on Silicon Heteroepitaxy
31.3. Si Surface Preparation
31.4. Growth of Nearly Lattice-Matched III/Vs on Silicon
31.5. Growth of Highly Mismatched III/Vs on Silicon
31.6. Summary
32. Heteroepitaxial Growth of Si, Si1−xGex-, and Ge-Based Alloy
32.1. Introduction
32.2. Crystal Growth
32.3. Strain, Dislocations, and Defects in Heteroepitaxial Layers
32.4. Conclusions
Index
- No. of pages: 1382
- Language: English
- Edition: 2
- Volume: 3A-3B
- Published: November 2, 2014
- Imprint: Elsevier
- Hardback ISBN: 9780444633040
- eBook ISBN: 9780444633057
TK
Tom Kuech
Affiliations and expertise
Department of Chemical and Biological Engineering, University of Wisconsin-Madison, USARead Handbook of Crystal Growth on ScienceDirect