Skip to main content

Ferroelectricity in Doped Hafnium Oxide

Materials, Properties and Devices

  • 1st Edition - March 27, 2019
  • Editors: Uwe Schroeder, Cheol Seong Hwang, Hiroshi Funakubo
  • Language: English
  • Paperback ISBN:
    9 7 8 - 0 - 0 8 - 1 0 2 4 3 0 - 0
  • eBook ISBN:
    9 7 8 - 0 - 0 8 - 1 0 2 4 3 1 - 7

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation i… Read more

Ferroelectricity in Doped Hafnium Oxide

Purchase options

Limited Offer

Save 50% on book bundles

Immediately download your ebook while waiting for your print delivery. No promo code is needed.

Book bundle cover eBook and print

Institutional subscription on ScienceDirect

Request a sales quote

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more.

Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized.