Ferroelectricity in Doped Hafnium Oxide
Materials, Properties and Devices
- 2nd Edition - August 5, 2025
- Latest edition
- Editors: Uwe Schroeder, Cheol Seong Hwang, Hiroshi Funakubo
- Language: English
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices, Second Edition covers all aspects relating to the structural and electrical properties of HfO2 and it… Read more
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Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices, Second Edition covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are extensively discussed, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HfO2 and standard ferroelectric materials. Finally, HfO2-based devices are summarized.
The new edition extends the first edition in the following areas: Detailed discussion of the causes and dependencies for ferroelectric properties; Broader coverage of all known deposition techniques; Comparison of ferroelectric with antiferroelectric, piezoelectric, and pyroelectric properties; More aspects on switching and field cycling behavior; Wider overview of simulation results; Further applications of new HfO2-based materials for energy storage, and pyroelectric, piezoelectric, and neuromorphic applications.
The new edition extends the first edition in the following areas: Detailed discussion of the causes and dependencies for ferroelectric properties; Broader coverage of all known deposition techniques; Comparison of ferroelectric with antiferroelectric, piezoelectric, and pyroelectric properties; More aspects on switching and field cycling behavior; Wider overview of simulation results; Further applications of new HfO2-based materials for energy storage, and pyroelectric, piezoelectric, and neuromorphic applications.
- Explores all aspects of the structural and electrical properties of HfO2, including processes, modeling, and implementation into semiconductor devices
- Considers potential applications, including FeCaps, FeFETs, FTJs, energy storage, pyroelectric, piezoelectric, and neuromorphic applications
- Provides a comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights into the problems of downscaling that conventional ferroelectrics face
Materials scientists, engineers, and others working in R&D in ferroelectric memory
1: Fundamentals of Ferroelectric and Piezoelectric Properties
2: Structures, Phase Equilibria, and Properties of HfO2
3: Ferroelectricity in Doped HfO2: Causes and Dependencies
3.1: Dopants in HfO2 Thin Films
3.2: Oxygen vacancies/Defect engineering
3.3: Quenching
3.4: Effect of Surface/Interface Energy on the Ferroelectric Properties
3.5: Stress
3.6: Laminated structures
3.7: Interface engineering
3.8: Thickness scaling
3.9: Impact of Electrodes on the Ferroelectric Properties
4: Growth
4.1: Dopants in Atomic Layer Deposited HfO2 Thin Films
4.2: Impact of Zr Content in Atomic Layer Deposition Hf12xZrxO2 Thin Films
4.3: Ferroelectric Films by Physical Vapor Deposition and Ion Implantation
4.4: Dopants in Chemical Solution-Deposited HfO2 Films
4.5: Epitaxial Growth of Doped HfO2 Ferroelectric Materials
4.6: MOCVD 4.7: Laser Molten: Bulk doped HfO2
5: Simulation
5.1: Thermodynamics of Phase Stability and Ferroelectricity From First Principles
5.2: Model of Nucleation-limited Phase Transitions
5.3: Phonons/Phase Transitions
5.4: Molecular dynamics
5.5: Defect levels
6: Polarization of Condensed Matter
6.1: Ferroelectricity
6.2: Antiferroelectricity
6.3: Piezoelectricity
6.4: Pyroelectricity
6.5: Tunability of dielectric and optical properties
7: Electrical Behavior: Switching, Cycling, Retention
7.1: Polarization Switching in HfO2-based devices
7.2: Field cycling behavior of Ferroelectric HfO2-based capacitors
7.3: Ferroelectric HfO2-based capacitors
7.4: Modeling of field cycling behavior of ferroelectric hafnia-based capacitors
8: Ferroelectric Hafnium Oxide-Based Applications
8.1: Ferroelectric one transistor/one capacitor memory cell
8.2: Antiferroelectric one transistor/one capacitor memory cell
8.3: AFE for DRAM
8.4: Ferroelectric Tunnel Junction
8.5: Ferroelectric Field Effect Transistor
8.6: Negative capacitance in HfO2- and ZrO2-based Ferroelectrics
8.7: Energy Storage Capacitors/Supercapacitors
8.8: Neuromorphic Applications
8.9: Pyro
8.10: Piezo
2: Structures, Phase Equilibria, and Properties of HfO2
3: Ferroelectricity in Doped HfO2: Causes and Dependencies
3.1: Dopants in HfO2 Thin Films
3.2: Oxygen vacancies/Defect engineering
3.3: Quenching
3.4: Effect of Surface/Interface Energy on the Ferroelectric Properties
3.5: Stress
3.6: Laminated structures
3.7: Interface engineering
3.8: Thickness scaling
3.9: Impact of Electrodes on the Ferroelectric Properties
4: Growth
4.1: Dopants in Atomic Layer Deposited HfO2 Thin Films
4.2: Impact of Zr Content in Atomic Layer Deposition Hf12xZrxO2 Thin Films
4.3: Ferroelectric Films by Physical Vapor Deposition and Ion Implantation
4.4: Dopants in Chemical Solution-Deposited HfO2 Films
4.5: Epitaxial Growth of Doped HfO2 Ferroelectric Materials
4.6: MOCVD 4.7: Laser Molten: Bulk doped HfO2
5: Simulation
5.1: Thermodynamics of Phase Stability and Ferroelectricity From First Principles
5.2: Model of Nucleation-limited Phase Transitions
5.3: Phonons/Phase Transitions
5.4: Molecular dynamics
5.5: Defect levels
6: Polarization of Condensed Matter
6.1: Ferroelectricity
6.2: Antiferroelectricity
6.3: Piezoelectricity
6.4: Pyroelectricity
6.5: Tunability of dielectric and optical properties
7: Electrical Behavior: Switching, Cycling, Retention
7.1: Polarization Switching in HfO2-based devices
7.2: Field cycling behavior of Ferroelectric HfO2-based capacitors
7.3: Ferroelectric HfO2-based capacitors
7.4: Modeling of field cycling behavior of ferroelectric hafnia-based capacitors
8: Ferroelectric Hafnium Oxide-Based Applications
8.1: Ferroelectric one transistor/one capacitor memory cell
8.2: Antiferroelectric one transistor/one capacitor memory cell
8.3: AFE for DRAM
8.4: Ferroelectric Tunnel Junction
8.5: Ferroelectric Field Effect Transistor
8.6: Negative capacitance in HfO2- and ZrO2-based Ferroelectrics
8.7: Energy Storage Capacitors/Supercapacitors
8.8: Neuromorphic Applications
8.9: Pyro
8.10: Piezo
- Edition: 2
- Latest edition
- Published: August 19, 2025
- Language: English
US
Uwe Schroeder
Uwe Schroeder has been Deputy Scientific Director at NaMLab in Dresden, Germany, since 2009. His primary research focuses include material properties of ferroelectric hafnium oxide and the integration of the material into future devices. As a project manager, he researched high-k dielectrics and their integration into DRAM capacitors, and it was during this work that the previously unknown ferroelectric properties of doped HfO2-based dielectrics were discovered. He has focused on a detailed understanding of these new material properties and their integration into memory devices ever since.
Affiliations and expertise
Deputy Scientific Director, Nanoelectronic Materials Laboratory, NaMLab, Dresden, GermanyCH
Cheol Seong Hwang
Cheol Seong Hwang has been a Professor in the Department of Materials Science and Engineering at Seoul National University, Korea, since 1998. He is a recipient of the Alexander von Humboldt fellowship award, the 7th Presidential Young Scientist Award of the Korean government, and AP Faculty Excellence Award, Air Products, USA. His interests include high-k gate oxide, DRAM capacitors, new memory devices including RRAM/PRAM, ferroelectric materials and devices, and thin-film transistors.
Affiliations and expertise
Professor, Department of Materials Science and Engineering, Hybrid Materials, Seoul National University, KoreaHF
Hiroshi Funakubo
Hiroshi Funakubo is a Professor of the Department of Materials Science and Engineering, Tokyo Institute of Technology, Tokyo, Japan. He received the Richard M. Fulrath Award from the American Ceramic Society in 2008. His specific areas of interest include the preparation and properties of dielectric, ferroelectric, and piezoelectric films.
Affiliations and expertise
Professor, Tokyo Institute of Technology, JapanRead Ferroelectricity in Doped Hafnium Oxide on ScienceDirect