Ultrawide Bandgap Semiconductors
- 1st Edition, Volume 107 - July 26, 2021
- Imprint: Academic Press
- Editor: Yuji Zhao
- Language: English
- Hardback ISBN:9 7 8 - 0 - 1 2 - 8 2 2 8 7 0 - 8
- eBook ISBN:9 7 8 - 0 - 1 2 - 8 2 2 8 7 1 - 5
Ultrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology developme… Read more
Purchase options
Institutional subscription on ScienceDirect
Request a sales quoteUltrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond. It includes important topics on the materials growth, characterization, and device applications of UWBG materials, where electronic, photonic, thermal and quantum properties are all thoroughly explored.
- Contains the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices
- Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization, as well as design and performance characterization of state-of-the-art UWBG materials, structures, and devices
- Presents an in-depth discussion on electronic, photonic, thermal, and quantum technologies based on UWBG materials
Scientists and engineers performing fundamental and applied research and technology development in the field of ultrawide bandgap semiconductors. Students, researchers and practitioners working in the field of semiconductors, thermal, electronic, photonic and quantum devices
- Cover image
- Title page
- Table of Contents
- Copyright
- Contributors
- Preface
- Chapter One: Fundamental technologies for gallium oxide transistors
- Abstract
- 1: Introduction
- 2: Lateral FET
- 3: Vertical FET
- 4: Conclusion
- References
- Chapter Two: Advanced concepts in Ga2O3 power and RF devices
- Abstract
- 1: Advantage of Ga2O3 for power and RF devices
- 2: Practical maximum surface electric field
- 3: Advanced device concept 1: High barrier height Schottky junctions
- 4: Advanced device concept 2: RESURF via trench structures
- 5: Summary
- References
- Chapter Three: β-(AlxGa(1 −x))2O3 epitaxial growth, doping and transport
- Abstract
- 1: Thermodynamics of (AlxGa(1 −x))2O3
- 2: Molecular beam epitaxy of β-(Alx,Ga(1 − x))2O3
- 3: Metal organic chemical vapor deposition of (Al,Ga)2O3
- 4: Doping and transport in (Alx,Ga(1 − x))2O3
- 5: Doping and transport in (Alx,Ga(1 − x))2O3/β-Ga2O3 heterostructures
- 6: Outlook for future work
- References
- Chapter Four: Thermal science and engineering of β-Ga2O3 materials and devices
- Abstract
- 1: Crystal structure and thermal conductivity of bulk β-Ga2O3
- 2: Thermal conductivity of β-Ga2O3 nanostructures
- 3: Heterogeneous integration with diamond
- 4: Wafer bonding of monocrystalline β-Ga2O3 on SiC
- 5: Device-level cooling
- References
- Chapter Five: Controlling different phases of gallium oxide for solar-blind photodetector application
- Abstract
- 1: Growth of Ga2O3 polymorphs
- 2: Photodetectors based on different Ga2O3 polymorphs
- 3: Ga2O3 photodetectors based on composite structure
- 4: Summary
- Reference
- Chapter Six: Nanoscale AlGaN and BN: Molecular beam epitaxy, properties, and device applications
- Abstract
- 1: Introduction
- 2: Epitaxy and characterization
- 3: Optical and excitonic properties
- 4: Device applications
- 5: Conclusion
- References
- Chapter Seven: High-Al-content heterostructures and devices
- Abstract
- 1: Introduction
- 2: Power switching and RF figures-of-merit
- 3: High-Al-content AlGaN HEMTs for power switching
- 4: High-Al-content AlGaN HEMTs for radio-frequency amplifiers
- 5: Processing and fabrication challenges for high-Al-content AlGaN heterostructures
- 6: Summary
- Acknowledgments
- References
- Chapter Eight: AlN nonlinear optics and integrated photonics
- Abstract
- 1: Introduction
- 2: Quadratic nonlinearity
- 3: Cubic nonlinearity
- 4: Simultaneously quadratic and cubic nonlinearities
- 5: Conclusion and prospects
- References
- Chapter Nine: Material epitaxy of AlN thin films
- Abstract
- 1: Introduction
- 2: Substrate selection for AlN film growth
- 3: Growth techniques
- 4: Growth processes for high crystalline quality AlN
- 5: Conclusion and outlook
- References
- Chapter Ten: Development of AlN integrated photonic platform for octave-spanning supercontinuum generation in visible spectrum
- Abstract
- 1: Introduction
- 2: Material characterizations and device fabrication
- 3: Numerical modeling on the waveguide performance
- 4: Octave-spanning supercontinuum generation from AlN waveguides
- 5: Other emerging applications and platforms
- 6: Conclusion
- References
- Chapter Eleven: AlGaN-based thin-film ultraviolet laser diodes and light-emitting diodes
- Abstract
- 1: Introduction and significance of ultraviolet laser diodes and light-emitting diodes
- 2: State-of-the-art of ultraviolet laser diodes
- 3: State-of-the-art of DUV LEDs
- References
- Chapter Twelve: Electrical transport properties of hexagonal boron nitride epilayers
- Abstract
- 1: Introduction
- 2: Prospects of n- and p-type doping of h-BN
- 3: Criteria of h-BN as thermal neutron detector materials
- 4: Vertical electrical transport properties and parameters
- 5: Lateral electrical transport properties and parameters
- 6: Dominant native and point defects in h-BN
- 7: Concluding remarks
- Acknowledgments
- References
- Index
- Edition: 1
- Volume: 107
- Published: July 26, 2021
- Imprint: Academic Press
- No. of pages: 480
- Language: English
- Hardback ISBN: 9780128228708
- eBook ISBN: 9780128228715
YZ
Yuji Zhao
Yuji Zhao is an Assistant Professor of Electrical Engineering at Arizona State University (ASU), where he leads the GaN research efforts at ASU. He received the Ph.D degree from University of California Santa Barbara (UCSB) in 2012 under the supervision of Nobel Laureate Professor Shuji Nakamura. Prof. Zhao’s research interests are in the field of wide bandgap materials and devices for applications in power electronics, RF and power ICs, and quantum photonics. He has authored/co-authored more than 140 journal and conference publications, 3 book chapters, and over 20 patents. Prof. Zhao is the receipt of 2019 Presidential Early Career Award for Scientists and Engineers, 2017 ASU Fulton Outstanding Assistant Professor Award, 2016 DTRA Young Investigator Award, 2015 NASA Early Career Faculty Award, 2015 SFAz Bisgrove Scholar Faculty Award, and 2010–2013 UCSB SSLEC Outstanding Research Award. He has served as a technical committee member for various international conferences such as CLEO, ECS Meeting, International Conference on Crystal Growth and Epitaxy, International Symposium on Semiconductor Lighting Emitting Devices, etc. Prof. Zhao is a member of IEEE and MRS.
Affiliations and expertise
Arizona State University, USARead Ultrawide Bandgap Semiconductors on ScienceDirect