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Elsevier

Ultrawide Bandgap Semiconductors

Growth, Characterization, and Applications

  • 1st Edition - April 1, 2027
  • Latest edition
  • Authors: Qixin Guo, Xinqiang Wang
  • Language: English

Ultrawide Bandgap Semiconductors: Growth, Characterization, and Applications provides a thorough overview of ultrawide bandgap materials such as AlN, AlGaN, BN, Diamond, and Ga₂O₃,… Read more

Description

Ultrawide Bandgap Semiconductors: Growth, Characterization, and Applications provides a thorough overview of ultrawide bandgap materials such as AlN, AlGaN, BN, Diamond, and Ga₂O₃, focusing on their growth methods, fundamental properties, and device applications. The increasing demand for high-performance power electronics, deep-UV optoelectronics, and quantum devices underscores the need for a comprehensive understanding of these materials. The book covers core topics including epitaxial growth techniques, advanced characterization methods, and emerging applications, with dedicated chapters on each material system. Special attention is given to innovative device architectures and the potential of GeO₂ and other novel materials for future technological breakthroughs. Its detailed chapters on growth techniques, property modulation, and device integration support both educational and applied research efforts, fostering innovation in next-generation electronic and photonic systems.

Key features

  • Summarizes the latest growth and characterization techniques for ultrawide bandgap semiconductors
  • Explores applications in power electronics, UV optoelectronics, and quantum devices
  • Connects fundamental material properties with device engineering and performance
  • Incorporates emerging materials such as GeO₂ for future innovations

Readership

Researchers and engineers in optoelectronics and power electronics

Table of contents

Part I: Foundations of ultrawide bandgap semiconductors

1. Introduction to ultrawide bandgap semiconductors

2. Growth methods for ultrawide bandgap semiconductors

3. Characterization techniques for ultrawide bandgap semiconductors

Part II: Diamond: The ultimate wide-bandgap semiconductor

4. Diamond growth, properties and applications

Part III: Nitride-based ultrawide bandgap semiconductors

5. Epitaxy and Applications of AlN and AlGaN for deep ultraviolet optoelectronics

6. Ferroelectric ScAlN: Revolutionizing wurtzite nitrides for next-generation electronics and memory

7. Material growth, physical properties, and device applications of emerging BN

Part IV: Oxide-based ultrawide bandgap semiconductors

8. First-principle calculations of gallium oxide-based materials

9. Bulk growth of gallium oxide

10. Gallium oxide thin films: Growth and applications

11. Atomic-level engineering of gallium oxide: Doping, heterostructures, and property control for advanced devices

12. Color-tunable light emitting diodes based on rare earth doped gallium oxide films

Part V: Oxide-based ultrawide bandgap semiconductors

13. Tunable oxide alloys: Growth and application of aluminum gallium oxide and indium gallium oxide films

14. Germanium dioxide thin films and emerging ultrawide bandgap semiconductors

Product details

  • Edition: 1
  • Latest edition
  • Published: April 1, 2027
  • Language: English

About the authors

QG

Qixin Guo

Qixin Guo is a Professor in the Department of Electrical and Electronic Engineering and the Synchrotron Light Application Center at Saga University, Japan. His research focuses on the epitaxial growth and characterization of semiconductor materials, in particular on the growth of nitride and oxide semiconductors using techniques such as metalorganic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), and sputtering. His expertise extends to various characterization techniques, including X-ray diffraction (XRD), UV/Vis spectrophotometry, Raman spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDX), and X-ray absorption fine structure (XAFS).
Affiliations and expertise
Professor, Department of Electrical and Electronic Engineering and Synchrotron Light Application Center, Saga University, Japan

XW

Xinqiang Wang

Xinqiang Wang is a Professor and Deputy Director of the State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, and Director of the Dongguan Research Institute for Optoelectronics at Peking University, China. His research focuses on the growth of III-nitride compound semiconductors using molecular beam epitaxy (MBE) and metal–organic chemical vapor deposition (MOCVD), as well as the fabrication and characterization of light-emitting and electronic devices. His expertise extends to various characterization techniques, including micro photoluminescence (μ-PL), X-ray diffraction (XRD), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and electron energy loss spectroscopy (STEM).
Affiliations and expertise
Professor and Deputy Director, State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Peking University, China