The Physics of SiO2 and Its Interfaces
Proceedings of the International Topical Conference on the Physics of SiO2 and Its Interfaces Held at the IBM Thomas J. Waston Research Center, Yorktown Heights, New York, March 22-24, 1978
- 1st Edition - January 1, 1978
- Editor: Sokrates T. Pantelides
- Language: English
- eBook ISBN:9 7 8 - 1 - 4 8 3 1 - 3 9 0 0 - 5
The Physics of SiO2 and Its Interfaces covers the proceedings of the International Topical Conference on the Physics of SiO2 and its Interfaces, held at the IBM Thomas J. Watson… Read more
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Request a sales quoteThe Physics of SiO2 and Its Interfaces covers the proceedings of the International Topical Conference on the Physics of SiO2 and its Interfaces, held at the IBM Thomas J. Watson Research Center, Yorktown Heights, New York on March 22-24, 1978. The book focuses on the properties, reactions, transformations, and structures of silicon dioxide (SiO2). The selection first discusses the electronic properties of vitreous SiO2 and small polaron formation and motion of holes in a-SiO2. Discussions focus on mobility edges and polarons, deep states in the gap, and excitons. The text also ponders on field-dependent hole and exciton transport in SiO2 and electron emission from SiO2 into vacuum. The publication takes a look at the electronic structures of crystalline and amorphous SiO2; band structures and electronic properties of SiO2; and optical absorption spectrum of SiO2. The text also tackles chemical bond and related properties of SiO2; topological effects on the band structure of silica; and properties of localized SiO2 clusters in layers of disordered silicon on silver. The selection is a good reference for physicists and readers interested in the physics of silicon dioxide.
Chapter I: Transport Properties and Tunneling Electronic Properties of Vitreous Silicon Dioxide Small Polaron Formation and Motion of Holes in a-Si02 Field Dependent Hole Transport in Amorphous Si02 Exciton Transport in Si02 High-Electric Field Transport of Electrons in Si02 Electron Emission from Silicon Dioxide Into Vacuum Electron Transport in Silicon Oxynitride The Nature of Electron Tunneling in Si02 Evidence for a Band Tail on the Conduction Band Edge of Thermal Si02 from Photon-Assisted Tunneling MeasurementsChapter II: Electronic Structure and Spectra Electronic Structure of Crystalline and Amorphous Si02 Electronic Structure of α-Quartz and the Influence of Some Local Disorder: A Tight-binding Study Electronic Structure Investigations of Two Allotropie Forms of Si02: α-Quartz and β-Cristobalite Band Structures and Electronic Properties of Si02 K X-ray Spectra of Amorphous and Crystalline Si02 The Optical-Absorption Spectrum of Si02 Inelastic Electron Scattering in Si02 Electronic Structure of Si02 from Electron Energy Loss Spectroscopy The Absorption and Photoconductivity Spectra of Vitreous Si02 Calculated and Measured Auger Lineshapes in Si02 Is Silicon Dioxide Covalent or Ionic? Chemical Bond and Related Properties of Si02 Topological Effects on the Band Structure of SilicaChapter III: Thermal and Structural Properties Heat Pulse Experiments on Vitreous Si02 in the Temperature Range 2.5-300K Thermal Conductivity of Si02 Neutron Diffraction by Vitreous Silica Raman Spectra and Atomic Configurations of Vitreous Silica Electrostriction and Piezoelectricity of Thermally Grown Si02 Films Critical Need for S(k,ω) Determinations in Amorphous Si02: Calculation of Physical Properties Via Frozen Liquid Phonons Properties of Localized Silicon-Dioxide Clusters in Layers of Disordered Silicon on SilverChapter IV: Defects and Impurities in Thermal Si02 The Properties of Electron and Hole Traps in Thermal Si02 Layers Grown on Silicon Dynamic Behavior of Mobile Ions in Si02 Layers Photo-injection Studies of Traps in HC1/H20 Oxides Photodepopulation of Electrons Trapped in Si02 on Sites Related to As and P Implantation Chemical State of Phosphorus in Deposited Si02(P) Films Spectroscopic and Structural Properties of Nitrogen-Doped Low-Temperature Si02 Films Some Observations of Defects in Amorphous Si02 Films Measurement of Hydrogen Profiles in Si02 by a Nuclear Reaction Technique Interaction of Dissolved Molecular Hydrogen with a Vitreous Silica Host Hydrogen in Si02 Films on Silicon ESR Centers and Charge Defects Near the Si/Si02 InterfaceChapter V: Defects and Impurities in α-Quartz and Fused Silica Defects and Impurities in α-Quartz and Fused Silica A Germanium Tri-Hydrogen Center in α-Quartz Electron Paramagnetic Resonance Studies on Al Centers in Vitreous Silica Oxygen-Associated Trapped Hole Centers in High-Purity Fused Silica A Model for Point Defects in Silica Auger Spectra of Si02 Surface Defect Centers Vibrational and Electronic Spectroscopy of Ion-Implantation-Induced Defects in Fused Silica and Crystalline Quartz Raman Studies of Structural Defects in Vitreous Si02 Cathodoluminescence Studies of Si02 - Na, Cl, Ge, Cu, Au, and Oxygen Vacancy Results Anomalous Dielectric Absorption in Si02-Based Glasses XPS Study of Sodium Oxide in Amorphous Si02 Modification of SiOx Intrinsic Surface Phonons in Porous Glass Positronium-Surface Interaction in the Pores of Vycor Glass Ion Irradiation and Stored Energy in Vitreous Si02Chapter VI: Electronic Structure of the Si-Si02 Interface Electronic States of Si-Si02 Interfaces The Defect Structure of the Si-Si02 Interface, A Model Based on Trivalent Silicon and Its Hydrogen "Compounds" Electronic Structure of a Model Si-Si02 InterfaceChapter VII: The Stoichiometry of the Si-Si02 Interface Continuous-Random-Network Models for the Si-Si02 Interface Studies of the Si-Si02 Interface by MeV Ion Scattering Transmission Electron Microscopy of Microstructural Defects in Si-Si02 Systems - Si Clusters in Si02 Film A High-Resolution Electron Microscopy Study of the Si-Si02 Interface Structure of the Si-Si02 Interface by Internal Photoemission Auger Sputter Profiling Studies of the Si-Si02 Interface Auger Analysis of the Si02/Si Interface of Ultrathin Oxides Studies of Si/Si02 Interfaces and Si02 by XPS X-ray Photoelectron Spectroscopy of Si02-Si Interfacial Regions Chemical Structure of the Transitional Region of the Si02/Si Interface MOS Solar Cell as a Tool to Study the Transition Region Associated with Ultra Thin Films of SiOxChapter VIII: Interface Properties Initial Stages of Si02 Formation on Si(111) The Si-Si02 Interface and Localization in the Inversion Layer Metastabilities at the Si-SiOx Interface Photocapacitance Probing of Si-Si02 Interface States Transient Capacitance Measurements of Electronic States at the SiOz-Si Interface Interface States Resulting from a Hole Flux Incident on the Si02/Si Interface The Influence of the pH on the Surface State Density at the Si02-Si Interface The Si-Si02 Interface: Oxide Charge, Electron Affinity and Fast Surface States Lateral Nonuniformities (LNU) of Oxide and Interface State Charge Temperature Dependence of Relaxation of Injected Charge at the PolycrystalIine-SUicon/Si02 Interface Effects of Ultra-thin SiOx in Conducting M-I-S Structures Confirmation of Hydrogen Surface States at the Si-Si02 Interface Electrical Properties of Si02-Si Interface for Deformed Si Surfaces Shear Strength of Metal-Si02 ContactsList of ParticipantsAuthor Index
- No. of pages: 500
- Language: English
- Edition: 1
- Published: January 1, 1978
- Imprint: Pergamon
- eBook ISBN: 9781483139005
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