Books in Semiconductor physics

Books Journals

Ultrafast Physical Processes in Semiconductors

1st Edition
Volume 67
October 6, 2000
R. K. Willardson + 2 more
English
eBook
9 7 8 0 0 8 0 5 4 0 9 5 5

Intersubband Transitions in Quantum Wells: Physics and Device Applications

1st Edition
Volume 62
October 28, 1999
Eicke R. Weber + 3 more
English
eBook
9 7 8 0 0 8 0 8 6 4 6 0 0

Techniques and Challenges for 300 mm Silicon: Processing, Characterization, Modelling and Equipment

1st Edition
Volume 81
September 8, 1999
H. Richter + 2 more
English
Hardback
9 7 8 0 0 8 0 4 3 6 0 9 8

The activities of the semiconductor industry to introduce a new, large wafer diameter were triggered by expected potential overall savings - cost and resource - and an anticipated increasing demand for Silicon wafers. In the beginning, around 1994, agreement on the diameter of the next wafer generation had to be achieved and finally 300 mm was globally accepted to be the next wafer diameter, a decision obtained at international summits in 1994/1995, based on the work of a SEMI task force. Several workshops on 300 mm wafers have been held by SEMI, JSNM and other organizations during the past few years. However, the present E-MRS conference on Techniques and Challenges for 300 mm Silicon: Processing, Characterization, Modeling and Equipment was the first international scientific conference about this subject. The papers - invited as well as submitted - cover a wide range of subjects, financial issues, fab concepts, crystal growth, wafer process development, material and defect issues, wafer characterization and provide an excellent review of the present status of 300 mm technology.

Hydrogen in Semiconductors II

1st Edition
Volume 61
April 28, 1999
R. K. Willardson + 2 more
English
eBook
9 7 8 0 0 8 0 5 2 5 2 5 9

Rapid Thermal Processing

1st Edition
Volume 84
March 17, 1999
A. Slaoui + 3 more
English
Hardback
9 7 8 0 0 8 0 4 3 6 1 2 8

Rapid Thermal Processing (RTP) is a well established single-wafer technology in USLI semiconductor manufacturing and electrical engineering, as well as in materials science. The biggest advantage of RTP is that it eliminates the long-ramp-up and ramp-down times associated with furnaces, enabling a significant reduction in the thermal budget. Today, RTP is in production use for source/drain implant annealing, contact alloying, formation of refractory nitrides and silicides and thin gate dielectric (oxide) formation. The aim of Symposium I was to provide an overview of the latest information on research and development in the different topics cited above. The potential applications of RTP in new areas like large area devices such as flat planel displays and solar cells has to be investigated. About 30 papers were presented in this symposium. The contributions of most interest involved modelling and control, junctions formation and thermal oxidation, deposition and recrystallisation and silicide formations. However, the range of topics and the intent to focus on underlying, fundamental issues like dopant diffusion in silicon from solid sources, strain relaxation and photonic effects, nucleation as well as applications to magnetic films and solar cells devices.

Semiconductor Lasers II

1st Edition
December 31, 1998
Eli Kapon
English
Hardback
9 7 8 0 1 2 3 9 7 6 3 1 4
eBook
9 7 8 0 0 8 0 5 1 6 9 6 7

This volume presents state-of-the-art information on several important material systems and device structures employed in modern semiconductor lasers. The first two chapters discuss several III-V, II-VI, and VI-VI compound semiconductor material systems employed in diode lasers whose emission spectra cover the range from the blue to the mid-infrared. Subsequent chapters describe the elaboration of special laser structures designed for achieving narrow spectral linewidths and wavelength tunability, as well as high power emission devices. The last chapter covers the development of surface emitting diode lasers, particularly vertical cavity structures. In all five chapters, the underlying device physics as well as the state-of-the-art and future trends are discussed. This book introduces the non-expert to the design and fabrication issues involved in the development of these important laser devices. In addition, it reviews the current status of the different material systems and cavity configurations for the benefit of readers engaged in research in this field. Useful background material related to the fundamentals of lasing in semiconductors can be found in the companion volume, Semiconductor Lasers I: Fundamentals.

Nonlinear Optics in Semiconductors II

1st Edition
Volume 59
November 2, 1998
Elsa Garmire + 3 more
English
eBook
9 7 8 0 0 8 0 8 6 4 5 7 0

Identification of Defects in Semiconductors

1st Edition
Volume 51B
October 27, 1998
Michael Stavola + 2 more
English
eBook
9 7 8 0 0 8 0 8 6 4 4 9 5

GENERAL DESCRIPTION OF THE SERIESSince its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. GENERAL DESCRIPTION OF THE VOLUMEThis volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.

Nonlinear Optics in Semiconductors I

1st Edition
Volume 58
October 16, 1998
Elsa Garmire + 3 more
English
eBook
9 7 8 0 0 8 0 8 6 4 5 6 3

High Pressure Semiconductor Physics I

1st Edition
Volume 54
August 18, 1998
R. K. Willardson + 3 more
English
eBook
9 7 8 0 0 8 0 8 6 4 5 2 5

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Volumes 54 and 55 present contributions by leading researchers in the field of high pressure semiconductors. Edited by T. Suski and W. Paul, these volumes continue the tradition of well-known but outdated publications such as Brigman's The Physics of High Pressure (1931 and 1949) and High Pressure Physics and Chemistry edited by Bradley. Volumes 54 and 55 reflect the industrially important recent developments in research and applications of semiconductor properties and behavior under desirable risk-free conditions at high pressures. These developments include the advent of the diamond anvil cell technique and the availability of commercial piston–cylinder apparatus operating at high hydrostatic pressures. These much-needed books will be useful to both researchers and practitioners in applied physics, materials science, and engineering.

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