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Books in Semiconductor physics

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41-50 of 65 results in All results

III-Nitride Semiconductors

  • 1st Edition
  • December 6, 2000
  • M.O. Manasreh
  • English
  • Hardback
    9 7 8 - 0 - 4 4 4 - 5 0 6 3 0 - 6
  • eBook
    9 7 8 - 0 - 0 8 - 0 5 3 4 4 4 - 2
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Ultrafast Physical Processes in Semiconductors

  • 1st Edition
  • Volume 67
  • October 6, 2000
  • R. K. Willardson + 2 more
  • English
  • eBook
    9 7 8 - 0 - 0 8 - 0 5 4 0 9 5 - 5
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Intersubband Transitions in Quantum Wells: Physics and Device Applications

  • 1st Edition
  • Volume 62
  • October 28, 1999
  • Eicke R. Weber + 3 more
  • English
  • eBook
    9 7 8 - 0 - 0 8 - 0 8 6 4 6 0 - 0
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Techniques and Challenges for 300 mm Silicon: Processing, Characterization, Modelling and Equipment

  • 1st Edition
  • Volume 81
  • September 8, 1999
  • H. Richter + 2 more
  • English
  • Hardback
    9 7 8 - 0 - 0 8 - 0 4 3 6 0 9 - 8
The activities of the semiconductor industry to introduce a new, large wafer diameter were triggered by expected potential overall savings - cost and resource - and an anticipated increasing demand for Silicon wafers. In the beginning, around 1994, agreement on the diameter of the next wafer generation had to be achieved and finally 300 mm was globally accepted to be the next wafer diameter, a decision obtained at international summits in 1994/1995, based on the work of a SEMI task force. Several workshops on 300 mm wafers have been held by SEMI, JSNM and other organizations during the past few years. However, the present E-MRS conference on Techniques and Challenges for 300 mm Silicon: Processing, Characterization, Modeling and Equipment was the first international scientific conference about this subject. The papers - invited as well as submitted - cover a wide range of subjects, financial issues, fab concepts, crystal growth, wafer process development, material and defect issues, wafer characterization and provide an excellent review of the present status of 300 mm technology.

Hydrogen in Semiconductors II

  • 1st Edition
  • Volume 61
  • April 28, 1999
  • R. K. Willardson + 2 more
  • English
  • eBook
    9 7 8 - 0 - 0 8 - 0 5 2 5 2 5 - 9
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Rapid Thermal Processing

  • 1st Edition
  • Volume 84
  • March 17, 1999
  • A. Slaoui + 3 more
  • English
  • Hardback
    9 7 8 - 0 - 0 8 - 0 4 3 6 1 2 - 8
Rapid Thermal Processing (RTP) is a well established single-wafer technology in USLI semiconductor manufacturing and electrical engineering, as well as in materials science. The biggest advantage of RTP is that it eliminates the long-ramp-up and ramp-down times associated with furnaces, enabling a significant reduction in the thermal budget. Today, RTP is in production use for source/drain implant annealing, contact alloying, formation of refractory nitrides and silicides and thin gate dielectric (oxide) formation. The aim of Symposium I was to provide an overview of the latest information on research and development in the different topics cited above. The potential applications of RTP in new areas like large area devices such as flat planel displays and solar cells has to be investigated. About 30 papers were presented in this symposium. The contributions of most interest involved modelling and control, junctions formation and thermal oxidation, deposition and recrystallisation and silicide formations. However, the range of topics and the intent to focus on underlying, fundamental issues like dopant diffusion in silicon from solid sources, strain relaxation and photonic effects, nucleation as well as applications to magnetic films and solar cells devices.

Semiconductor Lasers II

  • 1st Edition
  • December 31, 1998
  • Eli Kapon
  • English
  • Hardback
    9 7 8 - 0 - 1 2 - 3 9 7 6 3 1 - 4
  • eBook
    9 7 8 - 0 - 0 8 - 0 5 1 6 9 6 - 7
This volume presents state-of-the-art information on several important material systems and device structures employed in modern semiconductor lasers. The first two chapters discuss several III-V, II-VI, and VI-VI compound semiconductor material systems employed in diode lasers whose emission spectra cover the range from the blue to the mid-infrared. Subsequent chapters describe the elaboration of special laser structures designed for achieving narrow spectral linewidths and wavelength tunability, as well as high power emission devices. The last chapter covers the development of surface emitting diode lasers, particularly vertical cavity structures. In all five chapters, the underlying device physics as well as the state-of-the-art and future trends are discussed. This book introduces the non-expert to the design and fabrication issues involved in the development of these important laser devices. In addition, it reviews the current status of the different material systems and cavity configurations for the benefit of readers engaged in research in this field. Useful background material related to the fundamentals of lasing in semiconductors can be found in the companion volume, Semiconductor Lasers I: Fundamentals.

Nonlinear Optics in Semiconductors II

  • 1st Edition
  • Volume 59
  • November 2, 1998
  • Elsa Garmire + 3 more
  • English
  • eBook
    9 7 8 - 0 - 0 8 - 0 8 6 4 5 7 - 0
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Identification of Defects in Semiconductors

  • 1st Edition
  • Volume 51B
  • October 27, 1998
  • R. K. Willardson + 2 more
  • English
  • eBook
    9 7 8 - 0 - 0 8 - 0 8 6 4 4 9 - 5
GENERAL DESCRIPTION OF THE SERIESSince its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. GENERAL DESCRIPTION OF THE VOLUMEThis volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.

Nonlinear Optics in Semiconductors I

  • 1st Edition
  • Volume 58
  • October 16, 1998
  • R. K. Willardson + 3 more
  • English
  • eBook
    9 7 8 - 0 - 0 8 - 0 8 6 4 5 6 - 3
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.