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Books in Materials science general

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951-957 of 957 results in All results

Mechanics and Chemistry in Lubrication

  • 1st Edition
  • August 1, 1985
  • A. Dorinson + 1 more
  • English
  • eBook
    9 7 8 - 0 - 0 8 - 0 8 7 5 7 3 - 6
Although it is widely recognized that friction, wear and lubrication are linked together in a single interdisciplinary complex of scientific learning and technological practice, fragmented and specialized approaches still predominate. In this book, the authors examine lubrication from an interdisciplinary viewpoint. They demonstrate that once the treatment of lubrication is released from the confines of the fluid film concept, this interdisciplinary approach comes into full play. Tribological behavior in relation to lubrication is then examined from two major points of view: one is mechanical, not only with respect to the properties and behavior of the lubricant but also of the surfaces being lubricated. The other is chemical and encompasses the chemistry of the lubricant, the surfaces and the ambient surroundings. It is in the emphasis on the interaction of the basic mechanical and chemical processes in lubrication that this book differs from conventional treatments.

Industrial Tribology

  • 1st Edition
  • March 1, 1983
  • M.H. Jones + 1 more
  • English
  • eBook
    9 7 8 - 0 - 0 8 - 0 8 7 5 7 2 - 9

Radiation Effects Computer Experiments

  • 1st Edition
  • January 1, 1983
  • J.R. Beeler
  • English
  • eBook
    9 7 8 - 0 - 0 8 - 0 9 8 4 6 4 - 3
Defects in Solids, Volume 13: Radiation Effects Computer Experiments provides guidance to persons interested in learning how to develop and use computer experiment programs to simulate defect production and annealing in solids. The book first elaborates on computer experiment methods and outline of defect properties computations. Topics include metal models used in defect property example calculations; configuration energy computation procedure; migration energy computation procedure; dynamical method; and Monte Carlo method. The publication also examines vacancies and divacancies and self interstitials. The manuscript takes a look at impurity atoms, defect migration, and vacancy clusters. Discussions focus on heterogeneous nucleation of vacancy clusters and voids, vacancy and divacancy migration, substitutional metallic large impurity atom, and vacancy clusters in face-centered cubic metals. The publication also tackles binary collision approximation cascade program construction and collision cascades and displacement spikes. The text is a valuable source of information for readers wanting to develop and use computer experiment programs to copy defect production and annealing in solids.

Synthesis, Crystal Growth and Characterization

  • 1st Edition
  • January 1, 1982
  • K. Lal
  • English
  • eBook
    9 7 8 - 0 - 0 8 - 0 9 8 4 6 9 - 8
Synthesis, Crystal Growth and Characterization presents the proceedings of the International School on Synthesis, Crystal Growth and Characterization of Materials for Energy Conversion and Storage, held on October 12-23, 1981, at the National Physical Laboratory in New Delhi, India. The book consists of lectures by distinguished scientists from around the world who tackle different aspects of synthesis, crystal growth, characterization of materials, energy conversion, and energy storage. Organized into four parts encompassing 26 chapters, the book begins with an overview of the synthesis of materials at high temperatures and pressures before turning to a discussion of how macrocrystalline and amorphous silicon is prepared. It then looks at fundamental principles underlying the process of crystal growth, both from the vapor phase and from melt, and methodically introduces the reader to the different techniques used to characterize materials, including neutron scattering and electron transport. The next chapters focus on point defects and aggregates that influence the critical electronic properties of semiconducting materials, X-ray diffraction studies of strains and stresses in thin films used in solid-state devices, and electron spectroscopic studies of solid surfaces. The book also considers the role of physics in microelectronics and vice versa, fast ion transport in solids, and the concept of Syadvada in relation to modern physics. This volume is a valuable resource for participants of the International School on Synthesis, Crystal Growth and Characterization of Materials for Energy Conversion and Storage, as well as active researchers working in areas related to the field.

Impurity Doping Processes in Silicon

  • 1st Edition
  • Volume 2
  • January 1, 1981
  • F.F.Y. Wang
  • English
  • eBook
    9 7 8 - 0 - 0 8 - 0 9 8 3 5 7 - 8
This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

Related subjects

General materials science

Materials analysis and characterization

Materials modelling