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Silicon-Germanium Strained Layers and Heterostructures

Semi-conductor and semi-metals series

1st Edition - July 1, 2003

Authors: M. Willander, Suresh C. Jain

Hardback ISBN:

9 7 8 - 0 - 1 2 - 7 5 2 1 8 3 - 1

eBook ISBN:

9 7 8 - 0 - 0 8 - 0 5 4 1 0 2 - 0

The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of… Read more

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The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.