Silicon-Germanium Strained Layers and Heterostructures
Semi-conductor and semi-metals series
- 1st Edition, Volume 74 - July 1, 2003
- Authors: M. Willander, Suresh C. Jain
- Language: English
- Hardback ISBN:9 7 8 - 0 - 1 2 - 7 5 2 1 8 3 - 1
- eBook ISBN:9 7 8 - 0 - 0 8 - 0 5 4 1 0 2 - 0
The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of… Read more
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Request a sales quoteThe study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.
* Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject* Appropriate for students and senior researchers
Students and senior researchers in Materials Science. Scientists in industry working with semi-conductors
Introduction; Strain, Stability, reliability and growth; mechanism of strain relaxation; strain, growth, and TED in SiGeC layers; Bandstructure and related properties; Heterostructure Bipolar Transistors; FETs and other devices.
- No. of pages: 322
- Language: English
- Edition: 1
- Volume: 74
- Published: July 1, 2003
- Imprint: Academic Press
- Hardback ISBN: 9780127521831
- eBook ISBN: 9780080541020
MW
M. Willander
Affiliations and expertise
Göteborg University and Linköping UniversitySJ
Suresh C. Jain
Affiliations and expertise
National Physical Laboratory, New Delhi, IndiaRead Silicon-Germanium Strained Layers and Heterostructures on ScienceDirect