Physics of Thin Films
Advances in Research and Development
- 1st Edition - October 2, 2013
- Latest edition
- Editors: Maurice H. Francombe, John L. Vossen
- Language: English
- Paperback ISBN:9 7 8 - 1 - 4 8 3 1 - 0 9 6 4 - 0
- eBook ISBN:9 7 8 - 1 - 4 8 3 1 - 0 3 3 0 - 3
Physics of Thin Films: Advances in Research and Development primarily deals with the influence of ions or optical energy on the deposition, properties, and etching on thin films.… Read more
Physics of Thin Films: Advances in Research and Development primarily deals with the influence of ions or optical energy on the deposition, properties, and etching on thin films. The book is a collection of five articles, with one article per chapter. Chapter 1 covers ionized cluster beam deposition; epitaxy; and film-formation mechanism. Chapter 2 discusses the activated reactive evaporation process; the deposition of refractory compounds; the role of plasma in the process; and its applications. Chapter 3 focuses on ion-beam processing of optical thin films; ion sources and ion-surface interactions; and the different kinds of bombardment involved. Chapter 4 deals with laser induced etching - its mechanisms, methods, and applications. Chapter 5 talks about contacts to GaAs devices; Fermi-level pinning; and heterojunction contacts. The book is recommended for physicists and engineers in the field of electronics who would like to know more about thin films and the progresses in the field.
Contents
Contributors to Volume 13 v
Preface
Editors' Note
Ionized Cluster Beam Deposition and Epitaxy
I. Introduction
II. Equipment for Ionized Cluster Beam Deposition and Epitaxy
III. Film-Formation Mechanism
IV. Film Deposition and Epitaxial Growth
V. Conclusions
References
The Activated Reactive Evaporation Process
I. Introduction
II. Processes for the Deposition of Refractory Compounds
III. Direct Evaporation
IV. Reactive Evaporation Processes
V. Activated Reactive Evaporation and the Role of Plasma
VI. Implementation of the Activated Reactive Evaporation Process
VII. Compounds Synthesized by the ARE Process and the Effect of Process Variables
VIII. Microstructure, Preferred Orientation, and Mechanical Properties of Refractory Compound Deposits
IX. Applications of the ARE Process
X. Summary
References
Ion-Beam Processing of Optical Thin Films
I. Introduction
II. Ion Sources
III. Ion-Surface Interactions
IV. Film Properties and Analysis Method
V. Substrate Bombardment
VI. Postdeposition Bombardment
VII. Ion-Beam Deposition of Optical Films
VIII. Conclusion
References
Laser-Induced Etching
I. Introduction
II. Mechanisms of Laser-Induced Etching
III. Methods of Laser-Induced Etching
IV. Applications of Laser-Induced Etching
V. Concluding Remarks
References
Contacts to GaAs Devices
I. Introduction
II. "Ideal" Contacts
III. The GaAs Surface and InterfaceFermi-Level Pinning
IV. Alloyed Ohmic Contacts to GaAs
V. Heterojunction Contacts
VI. Recent Results
VII. Summary
References
Author Index
Subject Index
- Edition: 1
- Latest edition
- Published: October 2, 2013
- Language: English
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