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Molecular Beam Epitaxy
From Research to Mass Production
- 2nd Edition - June 26, 2018
- Editor: Mohamed Henini
- Language: English
- Paperback ISBN:9 7 8 - 0 - 1 2 - 8 1 2 1 3 6 - 8
- eBook ISBN:9 7 8 - 0 - 1 2 - 8 1 2 1 3 7 - 5
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, a… Read more
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Request a sales quoteMolecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage.
This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures.
- Condenses the fundamental science of MBE into a modern reference, speeding up literature review
- Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research
- Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Materials Science and Physics researchers
1. Molecular beam epitaxy of transition metal monopnictidesGavin Richard Bell2. Migration Enhanced Epitaxy of Low Dimensional StructuresYoshiji Horikoshi3. MBE growth of Si-Ge materials and heterostructuresMaksym Myronov4. SiGeSn MBE Inga Anita Fischer5. MBE of Dilute Nitride Optoelectronic DevicesMircea Guina6. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device ApplicationsDonat J. As7. AlGaN nanowires for deep ultraviolet optoelectronicsZetian Mi8. plasma–assisted MBE of (Al,Ga)N layers and heterostructures Valentin Jmerik9. InAsBi and InAsSbBi materialsShane Johnson and Arvind Joshua Shalindar10. Molecular beam epitaxy of GaAsBi and related quaternary alloysMasahiro Yoshimoto and Kunishige Oe Oe11. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/DevicesGunther Springholz12. NIL-based site-control epitaxyMircea Guina and Teemu Hakkarainen13. Droplet epitaxy of nanostructuresStefano Sanguinetti14. Epitaxial Growth of Thin Films And Quantum Structures of II-VI Visible-Band Gap SemiconductorsIsaac Hernandez-Calderon15. MBE-grown wide band gap II-VI semiconductors for intersubband device applications Aidong Shen16. ZnO Materials and Devices grown by MBEÜmit Özgür17. Epitaxial Systems Combining Oxides and SemiconductorsGang niu and Bertrand Vilquin18. Nanostructures of SiGe and ferromagnetic propertiesKang L. Wang19. MBE of Hybrid topological/ insulator/ferromagnetic heterostructures and devicesSamarth .N and Anthony Richardella20. Challenges and opportunities in MBE growth of 2D crystals: an overviewHuili Grace Xing21. Molecular beam epitaxy of graphene and hexagonal boron nitrideJ. Marcelo J. Lopes and Dominique Vignaud22. MBE of Transition Metal Dichalcogenides and heterostructuresChristopher Hinkle23. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layersJiro Nishinaga24. Thin Films of Organic Molecules: Interfaces and Epitaxial GrowthAchim Schöll25. MBE of II-VI LasersSergey V. Ivanov, Sedova I.V and Sergey Sorokin26. THz Quantum Cascade LasersAaron Maxwell Andrews27. GaSb lasers grown on Silicon substrate for telecom application Eric Tournié28. GaP/Si based photovoltaic devices grown by MBE Charles Cornet29. MBE as a Mass Production TechniqueMatt Marek30. Mass production of optoelectronic devices: LEDs, lasers, VCSELsRoland Jäger31. Mass Production of Sensors Grown by MBENaohiro Kuze32. MBE as a Mass Production Enabling Technology for Electronic/Optoelectronic DevicesYung-Chung Kao33. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near FutureOleg Pchelyakov and Dmitry Pridachin
- No. of pages: 788
- Language: English
- Edition: 2
- Published: June 26, 2018
- Imprint: Elsevier
- Paperback ISBN: 9780128121368
- eBook ISBN: 9780128121375
MH
Mohamed Henini
Dr M. Henini has over 20 years’ experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.
Affiliations and expertise
The University of Nottingham, School of Physics and Astronomy, UKRead Molecular Beam Epitaxy on ScienceDirect