Materials and Process Characterization
- 1st Edition, Volume 6 - April 14, 2015
- Latest edition
- Editors: Norman G. Einspruch, Graydon B. Larrabee
- Language: English
- Paperback ISBN:9 7 8 - 1 - 4 8 3 2 - 0 4 3 0 - 7
- eBook ISBN:9 7 8 - 1 - 4 8 3 2 - 1 7 7 3 - 4
VLSI Electronics: Microstructure Science, Volume 6: Materials and Process Characterization addresses the problem of how to apply a broad range of sophisticated materials… Read more
VLSI Electronics: Microstructure Science, Volume 6: Materials and Process Characterization addresses the problem of how to apply a broad range of sophisticated materials characterization tools to materials and processes used for development and production of very large scale integration (VLSI) electronics. This book discusses the various characterization techniques, such as Auger spectroscopy, secondary ion mass spectroscopy, X-ray topography, transmission electron microscopy, and spreading resistance. The systematic approach to the technologies of VLSI electronic materials and device manufacture are also considered. This volume is beneficial to materials scientists, chemists, and engineers who are commissioned with the responsibility of developing and implementing the production of materials and devices to support the VLSI era.
List of Contributors
Preface
Chapter 1 Characterization of Silicon Materials for VLSI
I. Introduction
II. Characterization Techniques
III. Polycrystalline Silicon
IV. Single-Crystal Silicon
V. Slice Preparation
VI. Summary
Appendix. Properties of 54 Elements in Single-Crystal Silicon
References
Chapter 2 Characterization of Silicon Epitaxial Films
I. Introduction
II. Epitaxial-Growth Process
III. Electrical Characterization
IV. Physical and Optical Characterization
V. Epitaxial-Defect Characterization
VI. Epitaxial-Defect Measurements
VII. Summary
References
Chapter 3 Characterization of Dielectric Films
I. Introduction and Background
II. Basic Structure and Properties of Gate Dielectrics
III. The Classification of Dielectric Charges
IV. The Spatial Location of Oxide Charge
V. The Amount and Energy Location of Interface Traps
VI. Temperature Effects on Mobile Ionic Charge
VII. Injected Charge Trapping in Oxide Films
VIII. The Role of Dielectric Layer Characterization in VLSI
References
Chapter 4 The Status of Dry-Developed Resists for Each Lithographic Technology
I. Introduction
II. The Total Dry Process
III. Ablative Resists
IV. Photoresist Analogs
V. X-Ray Resist Analogs
VI. Electron Resist Analogs
VII. Ion-Beam Resist Analogs
VIII. Conclusions
References
Chapter 5 Microlithography in Semiconductor Device Processing
I. Introduction
II. Pattern Generation
III. Photomask Fabrication
IV. Wafer Resist Patterning
V. Summary and Conclusions
References
Chapter 6 Formation and Characterization of Transition-Metal Silicides
I. Introduction
II. Formation and Characterization
III. Silicide Transformations
IV. Properties of Silicides
Appendix. Silicide Tables
References
Chapter 7 Materials Characterization for Ion Implantation
I. Introduction
II. Techniques
III. Applications
IV. Summary
References
Chapter 8 Surface Characterization for VLSI
I. Introduction
II. Techniques of Surface Analysis
III. Applications to Process Flow
IV. Future Trends and Needs
References
Chapter 9 Microelectronic Test Chips for VLSI Electronics
I. Historical Perspective
II. Introduction
III. Types of Test Structures
IV. Test-Chip Organization and Test-Structure Design
V. Test-Chip Testers and Advanced Test Structures
VI. Future Directions
Appendix
References
Index
Contents of Other Volumes
- Edition: 1
- Latest edition
- Volume: 6
- Published: April 14, 2015
- Language: English
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