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Germanium Silicon: Physics and Materials
- 1st Edition, Volume 56 - November 2, 1998
- Editors: John C. Bean, R. K. Willardson, Eicke R. Weber, Robert Hull
- Language: English
- Hardback ISBN:9 7 8 - 0 - 1 2 - 7 5 2 1 6 4 - 0
- eBook ISBN:9 7 8 - 0 - 0 8 - 0 8 6 4 5 4 - 9
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known author… Read more
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Request a sales quoteSince its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Researchers, graduate students, and practitioners in materials science (electronic materials field) and electrical engineering (field of electronic devices).
J.C. Bean, Growth Techniques and Procedures. R. Hull, Misfit Strain Accommodation in SiGe Heterostructures. M.J. Shaw and M. Jaros, Fundamental Physics of Strained Layer GeSi: Quo Vadis? F. Cerdeira, Optical Properties. S.A. Ringel and P.N. Grillot, Electronic Properties and Deep Levels in Germanium-Silicon. J.C. Campbell, Optical Applications. K. Eberl, K. Brunner, and O.G. Schmidt, Si1-yCy and Si1-x-yGexCy Alloy Layers. Subject Index.
- No. of pages: 444
- Language: English
- Edition: 1
- Volume: 56
- Published: November 2, 1998
- Imprint: Academic Press
- Hardback ISBN: 9780127521640
- eBook ISBN: 9780080864549
JB
John C. Bean
Affiliations and expertise
University of Virginia, CharlottesvilleRW
R. K. Willardson
Affiliations and expertise
WILLARDSON CONSULTING SPOKANE, WASHINGTONEW
Eicke R. Weber
Affiliations and expertise
Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, GermanyRH
Robert Hull
Affiliations and expertise
University of Virginia, CharlottesvilleRead Germanium Silicon: Physics and Materials on ScienceDirect