List of Contributors. Preface. J. Pankove, Introduction. S.P. DenBaars and S. Keller, Metal-organic Chemical Vapor Deposition (MOCVD) of Group III Nitrides. W.A. Bryden and T.J. Kistenmacher, Growth of the Group IIIA Nitrides b Reactive Sputtering. N. Newman, Thermochemistry of III-N Semiconductors. S.J. Pearton and R.J. Shul, Etching of III-Nitrides. S.M. Bedair, Indium-Based Nitride Compounds. A. Trampert, O. Brandt, and K.H. Ploog, Crystal Structure of Group III Nitrides. H. Morkoc, F. Hamdani, and A. Salvador, Electronic and Optical Properties of III-v Nitride-Based Quantum Wells and Superlattices. K. Doverspike and J.I. Pankove, Doping in the II-Nitrides. T.Suski andP. Perlin, High Pressure Studies of Defects and Impurities in Gallium Nitride. B. Monemar, Optical Properties of GaN. W.R.L. Lambrecht, Band Structure of the Group-III Nitrides. N.E. Christensen and P. Perlin, Phonons and Phase Transitions in GaN. S. Nakamura, Applications. I. Akasaki and H. Amano, Lasers. C.H. Qiu and J.I. Pankove, III-v Nitrides Based X-Ray Detector. J.A. Cooper, Jr., Nonvolatile Random Access Memories in Wide Bandgap Semiconductors. Index.Contents of Volumes in This Series.