Festkörper Probleme XI
Advances in Solid State Physics
- 1st Edition - January 1, 1971
- Imprint: Pergamon
- Editor: O. Madelung
- Language: English
- Paperback ISBN:9 7 8 - 1 - 4 8 3 1 - 1 8 2 3 - 9
- eBook ISBN:9 7 8 - 1 - 4 8 3 1 - 5 0 6 5 - 9
Festkörperprobleme XI: Advances in Solid State Physics reviews advances in solid state physics and covers topics ranging from localized vibrational modes in semiconductors to… Read more
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Request a sales quoteFestkörperprobleme XI: Advances in Solid State Physics reviews advances in solid state physics and covers topics ranging from localized vibrational modes in semiconductors to isoelectric impurities in semiconductors, deep impurities, and liquid crystals. Elastic and inelastic electron tunneling through potential barriers in solids is also discussed, along with plasma physics and astrophysics. This book is comprised of 14 chapters and begins with a review of the theoretical and experimental requirements for the observation of high frequency, localized vibrational modes of impurities in a crystal lattice. The reader is then introduced to the properties of deep impurity levels in semiconductors. Some typical examples of isoelectronic impurities are presented, and theories of isoelectronic traps are considered. Subsequent chapters focus on the properties of the various types of liquid crystalline phases (nematic, cholesteric, and smectic); a few astrophysical problems for which the properties of the astrophysical plasma are important; and the use of stochastic models to probe the kinetics of phase transitions. Experimental results for elastic and inelastic electron tunneling through potential barriers in solids are also presented. This monograph will be of interest to physicists.
Localized Vibrational Modes in Semiconductors Infrared Absorption
Deep Impurities
Isoelectric Impurities in Semiconductors
Halbleiter-Metall-Übergang am Beispiel des VQ2
Liquid Crystals
Dynamische Eigenschaften an Festkörperoberflächen
Theorie elektronischer Eigenschaften amorpher Substanzen
Über den Ursprung der elektronischen Zustände an Halbleiteroberflächen
Einfluß der Präeparation auf Versuche mit Kristalloberflächen
Modellvorstellungen über Festkorperoberfläachen und ihre experimentelle Bestätigung
Results of Elastic and Inelastic Electron Tunneling through Potential Barriers in Solids
Plasma Physics and Astrophysics
Kinetische Beschreibung der ,Schwachen Turbulenz'
Stochiastic Models in the Theory of Phase Transitions
- Edition: 1
- Published: January 1, 1971
- Imprint: Pergamon
- No. of pages: 312
- Language: English
- Paperback ISBN: 9781483118239
- eBook ISBN: 9781483150659