Epitaxial Growth Part A
- 1st Edition - April 28, 1975
- Latest edition
- Editor: J Matthews
- Language: English
- Paperback ISBN:9 7 8 - 0 - 1 2 - 4 3 1 4 1 1 - 5
- eBook ISBN:9 7 8 - 0 - 3 2 3 - 1 5 2 1 2 - 9
Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection… Read more
Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection contains topics on the historical development of epitaxy, the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The text also provides descriptions of the methods used to prepare and examine thin films and a list of the overgrowth-substrate combinations studied. Mineralogists, materials engineers and scientists, and physicists will find this book a great source of insight.
List of Contributors
Preface
Contents of Part B
Chapter 1. A Historical Review of Epitaxy
I. Introduction
II. The Impact of High-Energy Electron Diffraction
III. The Use of Transmission Electron Microscopy
IV. The Development of UHV Techniques
V. Summary and Discussion
References
Chapter 2. Preparation of Single-Crystal Films
2.1 Evaporation of Thin Films
I. Introduction
II. Vacuum Requirements
III. Vacuum Generation
IV. Vapor Pressure and Rate of Evaporation
V. Evaporation Sources
VI. Multicomponent Evaporation
VII. Substrates and Accessories
References
2.2 Molecular-Beam Epitaxy
I. Introduction
II. Molecular-Beam Epitaxy System
III. Vaporization of Binary Semiconductors
IV. Deposition Process
V. Experimental Results
References
2.3 Electrodeposition
I. Introduction
II. Basic Principles of Electrodeposition
III. Bath Composition, Purity, and Throwing Power
IV. Basic Plating Parameters
V. Epitaxial Growth of the Elements
VI. Deposition of Epitaxial Alloy Layers
References
2.4 Chemical Vapor Deposition
I. Introduction
II. Fundamental Considerations
III. Systems Illustrating the Principles of CVD Epitaxy
References
2.5 Growth of Epitaxial Films by Sputtering
I. Introduction
II. Sputtering and Film-Deposition Processes
III. Experimental Techniques
IV. Epitaxial Films of Metals and Alloys
V. Epitaxial Semiconductor Films
VI. Epitaxial Oxide Films
VII. Conclusions and Recommendations
References
2.6 Liquid-Phase Epitaxy
I. Introduction
II. Compound Semiconductor and Magnetic-Garnet LPE Technology
III. Garnet-Film Processing
IV. Models of Epitaxial Growth
V. Areas for Further Investigation
Symbols
References
Chapter 3. Examination of Thin Films
3.1 Studies of Thin-Film Nucleation and Growth by Transmission Electron Microscopy
I. Introduction
II. Postnucleation Transmission Electron Microscopy
III. In Situ Transmission Electron Microscopy
References
3.2 X-Ray Topography
I. Introduction
II. X-Ray Diffraction Topography
III. Applications to Thin Films
References
3.3 Low-Energy Electron Diffraction and Auger-Electron Spectroscopy
I. The Problem
II. The LEED Experiment
III. Auger-Electron Spectroscopy
IV. Studies of Epitaxy by LEED
V. Conclusions
References
3.4 High-Energy Electron Diffraction
I. Introduction
II. Diffraction Instruments
III. Analysis of Diffraction Patterns
References
3.5 X-Ray Diffraction
I. Introduction
II. Peak Position Measurements
III. Diffraction Line Profile Analyses
IV. Integrated Intensity Measurements
References
3.6 Measurement of Microstains in Thin Epitaxial Films
I. Introduction
II. Microstain Determination Techniques Not Employing Moiré Fringes
III. Moiré Fringe Techniques for Microstain Determinations
IV. Conclusion
References
Index
- Edition: 1
- Latest edition
- Published: April 28, 1975
- Language: English
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