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Emerging Ferroelectric Materials and Devices
- 1st Edition, Volume 114 - November 22, 2023
- Editors: John Heron, Zetian Mi
- Language: English
- Hardback ISBN:9 7 8 - 0 - 4 4 3 - 1 9 3 9 0 - 3
- eBook ISBN:9 7 8 - 0 - 4 4 3 - 1 9 3 9 1 - 0
Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters. Each chapter is written by an international board… Read more
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Request a sales quoteSemiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters. Each chapter is written by an international board of authors.
- 2019 marks the year that nitride ferroelectrics were reported, and the indicators and mechanisms used for oxide ferroelectricity appear inadequate
- The emergence of nitride ferroelectrics has opened new frontiers in ferroelectric materials research and ferroelectric based technologies. This book is a direct consequence of this
- Draws upon the collective knowledge and expertise of leading scientists and researchers in this field to provide a holistic view on the state of ferroelectric nitride research and applications
Undergraduates, graduates, academics, and researchers in the field of Semiconductors and Semimetals
- Cover image
- Title page
- Table of Contents
- Series Page
- Copyright
- Contributors
- Preface
- Chapter One: Epitaxial ScAlN: Transistors through high ScN fraction thin films
- Abstract
- 1 ScAlN/GaN high-electron-mobility transistors
- 2 Heteroepitaxial high ScN fraction ScAlN
- References
- Chapter Two: Ferroelectric nitride semiconductors: Molecular beam epitaxy, properties, and emerging device applications
- Abstract
- 1 Introduction
- 2 Molecular beam epitaxy
- 3 Material properties
- 4 Emerging device applications
- 5 Summary
- Acknowledgments
- References
- Chapter Three: Structural and ferroelectric properties of Al1−xScxN
- Abstract
- 1 Introduction
- 2 Composition dependent structural properties
- 3 Growth mode dependent structural properties
- 4 On the ferroelectric properties of Al1−xScxN
- 5 Comparison of Al1−xScxN with other wurtzite-type ferroelectrics
- References
- Chapter Four: In-plane ferroelectric switching of non-polar wurtzite AlScN films using SAW resonators
- Abstract
- 1 Introduction
- 2 Growth of non-polar a-plane oriented Al0.7Sc0.3N films
- 3 Ferroelectric characterization of a-plane oriented Al0.7Sc0.3N films
- 4 Theoretical prediction of ferroelectrically active volume using FEM
- 5 Hysteresis loop and extraction of spontaneous polarization
- 6 Effect of ferroelectric switching on the frequency response of the SAW resonators
- 7 Conclusion
- References
- Chapter Five: Toward new ferroelectric nitride materials and devices: Aluminum boron nitride and aluminum scandium nitride ferroelectric high electron mobility transistors (FerroHEMTs)
- Abstract
- 1 Introduction
- 2 Aluminum boron nitride, ferroelectricity and structural trends
- 3 Aluminum boron nitride electrical characterization
- 4 Aluminum boron nitride outlook
- 5 Ferroelectric nitrides in RF devices: Al,ScN FerroHEMTs
- 6 Al,ScN FerroHEMT DC electrical characterization
- 7 Al,ScN FerroHEMT RF electrical characterization
- 8 FerroHEMT outlook
- Acknowledgments
- References
- Chapter Six: Reliability of ferroelectric devices
- Abstract
- 1 Introduction
- 2 Reliability parameters of ferroelectric capacitors
- 3 Methods to improve reliability
- 4 Conclusion
- Acknowledgement
- References
- Index
- No. of pages: 422
- Language: English
- Edition: 1
- Volume: 114
- Published: November 22, 2023
- Imprint: Academic Press
- Hardback ISBN: 9780443193903
- eBook ISBN: 9780443193910
ZM
Zetian Mi
Zetian Mi is a Professor in the Department of Electrical Engineering and Computer Science at the University of Michigan, Ann Arbor. He received the PhD degree in Applied Physics at the University of Michigan in 2006. His teaching and research interests are in the areas of III-nitride semiconductors, LEDs, lasers, quantum photonics, solar fuels, and artificial photosynthesis. Prof. Mi has edited 2 books, 12 book chapters, 20 patents/patent applications, more than 200 journal papers, and over 300 conference papers/presentations on these topics. He was a faculty member at McGill University from 2007 to 2016, where he received several awards, including the Hydro-Québec Nano-Engineering Scholar Award in 2009, the William Dawson Scholar Award in 2011, the Christophe Pierre Award for Research Excellence in 2012, and the Engineering Innovation Award in 2105. Prof. Mi has received the Young Investigator Award from the 27th North American Molecular Beam Epitaxy (MBE) Conference in 2010 and the Young Scientist Award from the International Symposium on Compound Semiconductors in 2015. Prof. Mi serves as the Editor of Progress in Quantum Electronics. He also served as the Associate Editor of IEEE J. Lightwave Technol. as well as the Chair of many international conferences, including the General Chair of IEEE Photonics Conference in 2020, General Chair of IEEE Photonics Society Summer Topicals Meeting in 2016-2017, and Co-Chair of International Symposium on Semiconductor Light Emitting Devices in 2017. Prof. Mi is a fellow of SPIE and OSA.
Affiliations and expertise
Professor, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, CanadaRead Emerging Ferroelectric Materials and Devices on ScienceDirect