Defects in Advanced Electronic Materials and Novel Low Dimensional Structures
- 1st Edition - June 21, 2018
- Latest edition
- Editors: Jan Stehr, Irina Buyanova, Weimin Chen
- Language: English
Defects in Advanced Electronic Materials and Novel Low Dimensional Structures provides a comprehensive review on the recent progress in solving defect issues and deliberat… Read more
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Description
Description
Defects in Advanced Electronic Materials and Novel Low Dimensional Structures provides a comprehensive review on the recent progress in solving defect issues and deliberate defect engineering in novel material systems. It begins with an overview of point defects in ZnO and group-III nitrides, including irradiation-induced defects, and then look at defects in one and two-dimensional materials, including carbon nanotubes and graphene. Next, it examines the ways that defects can expand the potential applications of semiconductors, such as energy upconversion and quantum processing. The book concludes with a look at the latest advances in theory.
While defect physics is extensively reviewed for conventional bulk semiconductors, the same is far from being true for novel material systems, such as low-dimensional 1D and 0D nanostructures and 2D monolayers. This book fills that necessary gap.
Key features
Key features
- Presents an in-depth overview of both conventional bulk semiconductors and low-dimensional, novel material systems, such as 1D structures and 2D monolayers
- Addresses a range of defects in a variety of systems, providing a comparative approach
- Includes sections on advances in theory that provide insights on where this body of research might lead
Readership
Readership
Materials Science, semiconductor physics academic researchers and professionals in the semiconductor industry
Table of contents
Table of contents
1. Point defects in ZnOMatthew D. McCluskey2. Point defects in group III nitridesBo Anders Monemar and Plamen P. Paskov3. Defects in 1D-NanowiresJan Stehr4. Defects in carbon nanotubesAli Ghavamian, Maksym Rybachuk and Andreas Öchsner5. Defects in grapheneLitao Sun and Tao Xu6. Defects in 2D-materialsWu Zhou and Junhao Lin7. Energy upconversion promoted by defectsIrina Buyanova8. Defects for quantum information processing in SiCGeorgy Astakhov and Vladimir Dyakonov9. Defects for quantum information processing in SiEisuke Abe and Kohei Itoh10. Room temperature defect engineered spintronics in dilute nitridesWeimin M. Chen
Product details
Product details
- Edition: 1
- Latest edition
- Published: June 21, 2018
- Language: English
About the editors
About the editors
JS
Jan Stehr
IB
Irina Buyanova
WC