Contacts to Semiconductors

1. Ohmic Contacts to GaAs and Other III-V Compounds: Correlation of Microstructure with Electrical Properties 1.0 Electrical Properties of Ohmic Contacts 2.0 In-Situ Epitaxial Growth of Interlayers for Ohmic Contacts to n-GaAs 3.0 Correlational Studies of Interfacial Microstructure and AuGeNi Ohmic Contact Resistance 4.0 Interfacial Epitaxial Layer Formation by Limited Reactions for Ohmic Contact Formation to n-GaAs 5.0 Ohmic Contacts to p-GaAs 6.0 Ohmic Contacts to Other III-V Compounds 7.0 Future Directions References2. Stable and Epitaxial Contacts to III-V Compound Semiconductors 1.0 Introduction 2.0 Criteria for the Metal Layer: How Does One Choose the Ideal Metallization? 3.0 Growth of III-V/M/III-V Structures 4.0 Growth of the Thermodynamically Stable Metallic Compounds 5.0 Growth of Other Epitaxial Intermetallic Compounds 6.0 Properties of EPI-Metallic Films 7.0 Fundamentals of Schottky Barrier Formation 8.0 Conclusions References3. Schottky Barriers and Ohmic Contacts to Silicon 1.0 Introduction 2.0 Schottky Barrier Fundamentals 3.0 Fabrication of Schottky Diodes on Silicon 4.0 SBH'S of Non-Epitaxial Metals and Silicides 5.0 SBH Anomalies: Interface States or SBH 6.0 Non-Epitaxial SBH Trends and Models 7.0 Study of SB Mechanisms Through Epitaxial Silicides 8.0 Technologically Important Contacts to Silicon 9.0 Summary Glossary of Notation and Symbols References4. Insulator/Semiconductor Contacts 1.0 Introduction 2.0 Metal-Insulator-Semiconductor (MIS) Structures 3.0 The Si/SiO2 Interface 4.0 Gallium Arsenide-Insulator Interfaces 5.0 Indium Phosphide-Insulator Interface 6.0 Heterojunction Quasi-Insulator Interfaces 7.0 Some Afterthoughts References5. Interface States 1.0 Introduction 2.0 Trapped Charge at Interfaces 3.0 Modern Interface State Characterization 4.0 Intrinsic States 5.0 Extrinsic States: Conventional 6.0 Extrinsic States: Interface Specific 7.0 Interface State Control 8.0 Future Directions 9.0 Summary References6. Atomic Structure of Metal/GaAs Interfaces: The Role of Defects, Epitaxy, and Morphology 1.0 Introduction 2.0 Interface Formation and Resulting Microstructure 3.0 Contact Stability 4.0 Near-Interfacial Stoichiometry 5.0 Near-Interfacial Electrically Active Defects 6.0 Conclusions References7. Atomic-Scale Chemistry of Metal-Semiconductor Interfaces 1.0 Introduction 2.0 Interface Morphologies 3.0 Experimental Probes 4.0 Data Analysis and Experimental Details 5.0 Room Temperature Metal-Semiconductor Interface Formation 6.0 Low Temperature Metal-Semiconductor Interface Formation 7.0 Abrupt Interfaces Formed by Cluster Deposition 8.0 Interfaces Formed by Ion Deposition 9.0 Recent Results and Final Comments References8. Survey of Recent Developments in the Theoretical Description of the Properties of Semiconductor Interfaces 1.0 Introduction 2.0 Model Concepts, Methods, and Accomplishments 3.0 Semiconductor Vacuum Interfaces 4.0 Semiconductor Heterojunctions 5.0 Metal-Semiconductor Contacts 6.0 Synopsis References9. Atomic-Scale Control of Heterojunction Band Lineups 1.0 Introduction 2.0 Control of Band Lineups: General Status 3.0 Modifications of Heterojunction Band Lineups by Intralayers 4.0 Creation of Homojunction Band Offsets Via Dipole Intralayers 5.0 Detailed Discussion of Theoretical Models for Dipole Intralayers References Index