Analytical Techniques for the Characterization of Compound Semiconductors
- 1st Edition, Volume 21 - July 1, 1991
- Imprint: North Holland
- Editors: G. Bastard, H. Oppolzer
- Language: English
- Paperback ISBN:9 7 8 - 0 - 4 4 4 - 5 6 7 4 8 - 2
- eBook ISBN:9 7 8 - 0 - 4 4 4 - 5 9 6 7 2 - 7
This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and… Read more
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Request a sales quoteThis volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.
(Abbreviated.) Review Papers. Study of strain variation in LEC-grown GaAs bulk crystals by synchrotron radiation X-ray topography (J. Matsui). Multicrystal X-ray diffraction of heteroepitaxial structures (P.F. Fewster). Transmission electron microscopy of heteroepitaxial layer structures (H. Cerva). Control of MBE, MOMBE and CBE growth using RHEED (C.T. Foxon). Soft X-ray photoelectron spectroscopy of compound semiconductor surfaces and interfaces (I.T. McGovern). Secondary ion mass spectrometry of dopants and impurities in compound semiconductors: depth profiling of homo- and heterostructure (C. Grattepain, A.M. Huber). Electrical and optical defect spectroscopy of compound semiconductors (H.G. Grimmeiss, M. Kelverman). Subpicosecond luminescence spectroscopy of heterostructures (B. Deveaud). Far-infrared spectroscopy of impurities in semiconductors (R.A. Stradling). Micro-Raman spectroscopy for characterization of semiconductor devices (G. Abstreiter). Raman spectroscopy for impurity characterization in III-V semiconductors (J. Wagner). Techniques for Structural and Compositional Characterization. Modelling interdiffusion in epitaxial multilayer structures using X-ray simulation techniques (J.H.C. Hogg et al.). Ultrahigh resolution characterisation of compound semiconductors using pulsed laser atom probe techniques (R.A.D. Mackenzie et al.). Optical Characterization. A study of structural properties of bulk double-doped InP by laser scattering tomography and photoetching (R. Fornari et al .). Single-beam thermowave analysis of semiconductors (M. Wagner et al.). Electrical Characterization. Microscopic defect level characterization of semi-insulating compound semiconductors by TSC and PICTS. Application to the effect of hydrogen in CdTe (M. Hage-Ali et al.). An investigation of metal/GaAs(100) interfaces by deep level transient spectroscopy (L. Roberts, G. Hughes). Multi-Technique Applications. GaSb/GaAs heteroepitaxy characterized as a stress-free system (C. Raisin et al.). Comparison of pyrite thin films obtained from Fe and natural pyrite powder (C. De las Heras et al.). Author index. Subject index.
- Edition: 1
- Volume: 21
- Published: July 1, 1991
- No. of pages (eBook): 554
- Imprint: North Holland
- Language: English
- Paperback ISBN: 9780444567482
- eBook ISBN: 9780444596727
GB
G. Bastard
Affiliations and expertise
Groupe de Physique des Solides, Paris, FranceHO
H. Oppolzer
Affiliations and expertise
Siemens A.G., Munich, Germany