Amorphous Chalcogenides

DedicationPrefaceIntroductionI.1. Chronology of Commercial ApplicationsI.2. Formation and Stability of Amorphous SolidsI.3. Atomic StructureI.4. Electronic Structure1. Preparation of Amorphous Selenium Photoconductor Films by Vacuum Deposition1.1. Preparation of Amorphous Se Films for Imaging Applications1.2. Model for Amorphous–Crystalline Film Boundary1.3. Influence of Deposition Conditions on Electronic Properties of Amorphous Selenium1.4. Fractionation Effects in Amorphous Se–Te Films1.5. Conclusion2. Molecular Structure of Se-Rich Amorphous Films2.1. Techniques Exploited in Structural Studies2.2. Effect of Composition on Structure of AsxSe1−x Amorphous Films—Electron Diffraction Study2.3. Raman Scattering in Pure and Alloyed Amorphous Selenium: High-Frequency Spectral Region2.4. Composition Dependence of Raman Bands in Amorphous Se-rich Alloys AsxSe100−x2.5. Raman Scattering in Pure and Alloyed Amorphous Selenium: Low-Frequency Spectral Region2.6. Conclusion3. Effect of Thermal Evaporation Conditions on Structure and Structural Changes in Amorphous Arsenic Sulfides3.1. Influence of Preparation Conditions3.2. Samples and Technique to Probe Local Structure3.3. Local Structure of As2S3 Amorphous Films3.4. Conclusion4. The Big Invention of the Twentieth Century—Xerography4.1. Introduction4.2. History of the Big Twentieth-Century Invention and the Greatest Inventor4.3. Classification of Xerographic Processes4.4. Logical Steps in Practical Xerography4.5. Realization of Xerographic Process4.6. Phenomenological Aspects4.7. Photoreceptor Material Requirements5. Xerographic Spectroscopy of Gap States5.1. Xerographic Technique for Deep State Spectroscopy5.2. Corona Devices5.3. Principle of Xerographic Measurements Technique5.4. Dark Discharge in a-Se5.5. Photoinduced Changes of Xerographic Characteristics: Dark Discharge5.6. Residual Voltage in Se-Rich Photoreceptors5.7. Conclusion6. Effect of Antimony Alloying on Photoelectronic Properties of a-Se6.1. Preparation of a-SbxSe1–x and Measurement Techniques6.2. Fundamental Properties6.3. Dark Discharge6.4. Transient Photoconductivity6.5. PID Characteristics6.6. Conclusion7. High-Definition TV Pickup Tubes7.1. Saticon7.2. Target Structure and Current–Voltage Characteristics7.3. Properties of the Multiplicative Phenomenon7.4. New Super-HARP Pickup Tube7.5. Conclusion8. X-Ray Photoconductors for Direct Conversion of Digital Flat-Panel X-Ray Image Detectors8.1. Principles of the Direct-Conversion Digital X-Ray Image Detector8.2. The Ideal X-Ray Photoconductor8.3. Intrinsic Resolution of X-Ray Photoconductors8.4. Absorption, Photoconductor Thickness, and Carrier Schubwegs8.5. Medical Applications8.6. Glance to the Future