Advances in Optics of Charged Particle Analyzers: Part 1

1st Edition, Volume 232 - November 20, 2024
Editors: Peter W. Hawkes, Martin Hÿtch
Language: English
Hardback ISBN:
9 7 8 - 0 - 4 4 3 - 2 9 7 8 6 - 1
eBook ISBN:
9 7 8 - 0 - 4 4 3 - 2 9 7 8 7 - 8

Advances in Optics of Charged Particle Analyzers: Part 1, Volume 232 merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and El… Read more

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Advances in Optics of Charged Particle Analyzers: Part 1, Volume 232 merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. The series features articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science, digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains. Specific chapters cover Introduction to inverse problems in electron microscopy, Directional sinogram inpainting for limited angle tomography, Strain tomography of crystals, FISTA with adaptive discretization, Total variation discretization, and Reconstruction with a Gaussian Dictionary.

Advances in Optics of Charged Particle Analyzers: Part 1
Cover image
Title page
Table of Contents
Series Page
Copyright
Foreword
Chapter One Charged particles in electromagnetic fields
1.1 Electrostatic fields
1.1.1 Field strength and electrostatic potential
1.1.2 Electrostatic fields in the presence of materials
1.1.3 Prevention of electric breakdowns
1.1.4 Calculation of electrostatic fields
1.1.5 Common types of electrostatic field distributions
1.2 Magnetostatic fields
1.2.1 Magnetostatic fields and magnetic materials
1.2.2 Forming magnetostatic fields
1.2.3 Calculation of magnetostatic fields
1.2.4 Common types of magnetostatic field distributions
1.3 Charged particle motion in electromagnetic fields
1.3.1 General relations
1.3.2 Scaling laws for charged particle motion in static fields
1.3.3 Hamiltonian formalism
1.3.4 Symplectic relation
References
Chapter Two Aberration expansions in charged particle optics
2.1 Aberration expansions and aberration coefficients
2.2 Linear (paraxial) approximation
2.2.1 Geometric terms of paraxial expansion
2.2.2 Description of chromatically inhomogeneous charged particle beams
2.2.3 Paraxial symplectic relations
2.2.4 Transfer matrices
2.2.5 Paraxial properties of symmetric systems
2.2.6 Paraxial properties of periodic systems
2.2.7 General integral relation for the rigidity dispersion in static electromagnetic fields
2.3 Image aberrations
2.3.1 Aberrations in systems with two planes of symmetry
2.3.2 Aberrations in systems with one plane of symmetry
2.3.3 Aberrations and resolving power
2.3.4 Symplectic relations for aberration coefficients expressed in nonsymplectic variables
2.3.5 High-order transfer matrices
2.3.6 Elimination of aberrations in symmetric multistage systems
2.3.7 Nonlinear properties of periodic systems
2.4 Calculation of aberration expansions
2.4.1 Trajectory method
2.4.2 Fringing field integral method
References
Chapter Three Transporting charged particle beams in static fields
3.1 Paraxial geometric parameters of charged particle lenses
3.2 Axially symmetric electrostatic lenses
3.2.1 Conventional round lenses
3.2.2 Lenses with object or image immersed in the field
3.3 Two-dimensional and nearly two-dimensional electrostatic lenses
3.3.1 Two-dimensional lenses
3.3.2 Transaxial lenses
3.3.3 Hollow lenses
3.4 Crossed electrostatic lenses with essentially three-dimensional fields
3.5 Focusing charged particles and eliminating aberrations by electrostatic mirrors
3.6 Axially symmetric magnetic lenses
3.7 Quadrupole lenses and quadrupole multiplets
3.7.1 Focusing charged particles by quadrupole fields
3.7.2 Aberrations of quadrupole lenses
3.7.3 Quadrupole multiplets
References
Chapter Four Expulsion of charged particles by radiofrequency fields
4.1 Pseudopotential of an inhomogeneous radiofrequency field
4.1.1 Pseudopotential in the case of the position-independent field phase
4.1.2 Pseudopotential in the case of a position-dependent field phase
4.2 Transporting charged particles in multipole radiofrequency fields
4.2.1 Quadrupole radiofrequency guide
4.2.2 Hexapole, octopole and dodecapole radiofrequency guides
4.3 Radiofrequency repelling surfaces
4.3.1 Ion carpet
4.3.2 Stacked-ring guide
4.3.3 Ion funnel
4.3.4 Ion manipulation by radiofrequency fields
4.4 Time-dependent pseudopotential
References
Chapter Five Transporting and separating ions in gas-filled channels
5.1 Simulation of ion-molecule collisions
5.2 Transport of ion beams through gas-filled radiofrequency guides at low gas pressures
5.2.1 Collisional cooling in gas-filled radiofrequency guides
5.2.2 Creating propulsive fields in radiofrequency multipoles
5.2.3 Space charge effects in radiofrequency cooling quadrupole guides
5.3 Ion motion in a dense gas
5.3.1 Viscous medium model for ion motion
5.3.2 Damped pseudopotential of a radiofrequency field
5.3.3 Damped pseudopotential of a radiofrequency quadrupole
5.3.4 Propulsive pseudoforce
5.3.5 Comparison of efficiency of radiofrequency guides in a dense gas
5.4 Ion mobility separation
5.4.1 Mason-Schamp equation
5.4.2 Drift tube ion mobility separation
5.4.3 Traveling wave ion mobility separation
5.4.4 Trapped ion mobility separation
5.4.5 Differential ion mobility separation
References
References
Index

Peter W. Hawkes

Peter Hawkes obtained his M.A. and Ph.D (and later, Sc.D.) from the University of Cambridge, where he subsequently held Fellowships of Peterhouse and of Churchill College. From 1959 – 1975, he worked in the electron microscope section of the Cavendish Laboratory in Cambridge, after which he joined the CNRS Laboratory of Electron Optics in Toulouse, of which he was Director in 1987. He was Founder-President of the European Microscopy Society and is a Fellow of the Microscopy and Optical Societies of America. He is a member of the editorial boards of several microscopy journals and serial editor of Advances in Electron Optics.

Affiliations and expertise

Founder-President of the European Microscopy Society and Fellow, Microscopy and Optical Societies of America; member of the editorial boards of several microscopy journals and Serial Editor, Advances in Electron Optics, France

Martin Hÿtch

Dr Martin Hÿtch, serial editor for the book series “Advances in Imaging and Electron Physics (AIEP)”, is a senior scientist at the French National Centre for Research (CNRS) in Toulouse. He moved to France after receiving his PhD from the University of Cambridge in 1991 on “Quantitative high-resolution transmission electron microscopy (HRTEM)”, joining the CNRS in Paris as permanent staff member in 1995. His research focuses on the development of quantitative electron microscopy techniques for materials science applications. He is notably the inventor of Geometric Phase Analysis (GPA) and Dark-Field Electron Holography (DFEH), two techniques for the measurement of strain at the nanoscale. Since moving to the CEMES-CNRS in Toulouse in 2004, he has been working on aberration-corrected HRTEM and electron holography for the study of electronic devices, nanocrystals and ferroelectrics. He was laureate of the prestigious European Microscopy Award for Physical Sciences of the European Microscopy Society in 2008. To date he has published 130 papers in international journals, filed 6 patents and has given over 70 invited talks at international conferences and workshops.

Affiliations and expertise

Senior Scientist, French National Centre for Research (CNRS), Toulouse, France

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