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Advances in Imaging and Electron Physics, Volume 209, merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy… Read more
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Advances in Imaging and Electron Physics, Volume 209, merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. The series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science, digital image processing, electromagnetic wave propagation, electron microscopy and the computing methods used in all these domains.
1. Introduction to EELS
Alberto Eljarrat Ascunce
2. Low-loss EELS methods
Alberto Eljarrat Ascunce
3. DFT modeling of wurtzite III-nitride ternary alloys
Alberto Eljarrat Ascunce
4. AlN/GaN and InAlN/GaN DBRs
Alberto Eljarrat Ascunce
5. Multiple InGaN QW heterostructure
Alberto Eljarrat Ascunce
6. Er-doped Si-nc/SiO2 multilayer
Alberto Eljarrat Ascunce
7. Si-NCs embedded in dielectric matrices
Alberto Eljarrat Ascunce
8. EELS Conclusions
Alberto Eljarrat Ascunce
9. High-Tc Superconductors and Magnetic Electron Lenses
Jan-Peter Adriaanse
PH
MH