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Advanced MOS Device Physics
- 1st Edition - November 13, 2012
- Editor: Norman Einspruch
- Language: English
- Paperback ISBN:9 7 8 - 0 - 1 2 - 4 3 1 5 1 1 - 2
- eBook ISBN:9 7 8 - 0 - 3 2 3 - 1 5 3 1 3 - 3
VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The… Read more
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Request a sales quoteVLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.
List of Contributors
Preface
Chapter 1 Approaches to Scaling
I. Introduction
II. A Review of One-Dimensional MOSFET Drain Current Models
III. A Short-Channel MOS Drain Current Model
IV. Summary
References
Chapter 2 Current Trends in MOS Process Integration
I. Introduction
II. n-Channel MOS Transistors for CMOS or NMOS Technologies
III. p-Channel MOS Transistors
IV. Well Formation for CMOS
V. MOS Device Isolation
VI. Merged Bipolar/CMOS BiCMOS Processes
VII. Silicon-on-Insulator Technologies
References
Chapter 3 Hot Carrier Effects
I. Introduction
II. Channel Electric Field
III. Substrate Current Model
IV. Ydsat and Isub Dependence on Vg and L
V. Gate Current and Lucky Electron Model
VI. Thermionic Gate Current Model
VII. Hot Carrier Mean Free Path and Temperature
VIII. Effect of Non-Maxwellian Assumption
Chapter 4 Hot-Carrier-Resistant Structures
I. Introduction
II. Electric Field Reduction
III. Graded Drain Structures
IV. Gate-to-Source/Drain Overlap
V. Device Processing Variations
VI. Circuit Design Considerations
VII. Optimization and Trade-Offs
References
Chapter 5 Low-Temperature CMOS
I. Introduction
II. Low-Temperature Device Physics
III. Material Properties
IV. Device Reliability Issues
V. Circuit and System Performance
References
Chapter 6 MOSFET Modeling for Circuit Simulation
I. Introduction
II. Current-Voltage Characteristics
III. Capacitance Characteristics
IV. Parasitic Elements
V. Parameter Extraction
VI. Summary
Appendix A
Appendix B
References
Chapter 7 Latchup
I. Introduction
II. Latchup Fundamentals
III. Practical Methods of Circuit Evaluation
IV. Latchup Prevention Techniques
References
Chapter 8 Quantum Mechanical and Nonstationary Transport Phenomena in Nanostructured Silicon Inversion Layers
I. Introduction
II. Semiclassical Conductivity of Quantum MOS Devices
III. Quasi-One-Dimensional MOSFETS
IV. Surface Superlattice Transistors
V. Dynamics of Electron Transport in High Electric Fields
References
Index
- No. of pages: 382
- Language: English
- Edition: 1
- Published: November 13, 2012
- Imprint: Academic Press
- Paperback ISBN: 9780124315112
- eBook ISBN: 9780323153133
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