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Books in Semiconductor physics

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Fundamentals of Thermophotovoltaic Energy Conversion

  • 1st Edition
  • May 11, 2007
  • Donald Chubb
  • English
  • Hardback
    9 7 8 - 0 - 4 4 4 - 5 2 7 2 1 - 9
  • eBook
    9 7 8 - 0 - 0 8 - 0 5 6 0 6 8 - 7
This is a text book presenting the fundamentals of thermophotovoltaic(TPV) energy conversion suitable for an upper undergraduate or first year graduate course. In addition it can serve as a reference or design aid for engineers developing TPV systems. Each chapter includes a summary and concludes with a set of problems.The first chapter presents the electromagnetic theory and radiation transfer theory necessary to calculate the optical properties of the components in a TPV optical cavity. Using a simplified model, Chapter 2 develops expressions for the maximum efficiency and power density for an ideal TPV system. The next three chapters consider the three major components in a TPV system; the emitter, filter and photovoltaic(PV) array. Chapter 3 applies the electromagnetic theory and radiation transfer theory presented in Chapter 1 in the calculation of spectral emittance. From the spectral emittance the emitter efficiency is calculated. Chapter 4 discusses interference, plasma and resonant array filters plus an interference filter with an imbedded metallic layer, a combined interference-plasma filter and spectral control using a back surface reflector(BSR) on the PV array. The theory necessary to calculate the optical properties of these filters is presented. Chapter 5 presents the fundamentals of semiconductor PV cells. Using transport equations calculation of the current-voltage relation for a PV cell is carried out. Quantum efficiency, spectral response and the electrical equivalent circuit for a PV cell are introduced so that the PV cell efficiency and power output can be calculated.The final three chapters of the book consider the combination of the emitter, filter and PV array that make up the optical cavity of a TPV system. Chapter 6 applies radiation transfer theory to calculate the cavity efficiency of planar and cylindrical optical cavities. Also introduced in Chapter 6 are the overall TPV efficiency, thermal efficiency and PV efficiency. Leakage of radiation out of the optical cavity results in a significant loss in TPV efficiency. Chapter 7 considers that topic. The final chapter presents a model for a planar TPV system.Six appendices present background information necessary to carry out theoretical developments in the text. Two of the appendices include Mathematica programs for the spectral optical properties of multi-layer interference filters and a planar TPV system. Software is included for downloading all the programs within the book.

Germanium-Based Technologies

  • 1st Edition
  • March 23, 2007
  • Cor Claeys + 1 more
  • English
  • Hardback
    9 7 8 - 0 - 0 8 - 0 4 4 9 5 3 - 1
  • eBook
    9 7 8 - 0 - 0 8 - 0 4 7 4 9 0 - 8
Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book.

Semiconducting Chalcogenide Glass II

  • 1st Edition
  • Volume 79
  • December 17, 2004
  • Robert Fairman + 1 more
  • English
  • eBook
    9 7 8 - 0 - 0 8 - 0 5 4 1 0 5 - 1
Chalcogenide glass is made up of many elements from the Chalcogenide group. The glass is transparent to infrared light and is useful as a semiconductor in many electronic devices. For example, chalcogenide glass fibers are a component of devices used to perform laser surgery. The properties of chalcogenide glass result not only from their chemical composition and atomic structure, but also from the impact of numerous external factors. A comprehensive survey is presented of the properties of chalcogenide glass under various external impacts. Practical recommendations are presented for a wide range of applications. Part II is the second part of a three-volume work within the Semiconductors and Semimetals series.

Semiconducting Chalcogenide Glass III

  • 1st Edition
  • Volume 80
  • December 17, 2004
  • Robert Fairman + 1 more
  • English
  • Hardback
    9 7 8 - 0 - 1 2 - 7 5 2 1 8 9 - 3
  • eBook
    9 7 8 - 0 - 0 8 - 0 5 4 1 0 6 - 8
Chalcogenide glass is made up of many elements from the Chalcogenide group. The glass is transparent to infrared light and is useful as a semiconductor in many electronic devices. For example, chalcogenide glass fibers are a component of devices used to perform laser surgery. Semiconducting Chalcogenide Glass III: Applications of Chalcogenide Glasses is a comprehensive overview of designs of various chalcogenide glass devices are presented, including switches, phase inverters, voltage stabilizers, oscillators, indicators and display control circuits, memory devices, and sensors. A special chapter is devoted to chalcogenide glass applications in optical fibers. This collective monograph is intended to survey the current state of chalcogenide glass applications to facilitate further development.

Dilute Nitride Semiconductors

  • 1st Edition
  • December 15, 2004
  • Mohamed Henini
  • English
  • Hardback
    9 7 8 - 0 - 0 8 - 0 4 4 5 0 2 - 1
  • eBook
    9 7 8 - 0 - 0 8 - 0 4 5 5 9 9 - 0
This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 µm and 1.55 µm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers.In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics

Rapid Thermal Processing for Future Semiconductor Devices

  • 1st Edition
  • April 2, 2003
  • H. Fukuda
  • English
  • eBook
    9 7 8 - 0 - 0 8 - 0 5 4 0 2 6 - 9
This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices.This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.

Quantum Coherence Correlation and Decoherence in Semiconductor Nanostructures

  • 1st Edition
  • February 10, 2003
  • Toshihide Takagahara
  • English
  • Hardback
    9 7 8 - 0 - 1 2 - 6 8 2 2 2 5 - 0
  • eBook
    9 7 8 - 0 - 0 8 - 0 5 2 5 1 2 - 9
Semiconductor nanostructures are attracting a great deal of interest as the most promising device with which to implement quantum information processing and quantum computing. This book surveys the present status of nanofabrication techniques, near field spectroscopy and microscopy to assist the fabricated nanostructures. It will be essential reading for academic and industrial researchers in pure and applied physics, optics, semiconductors and microelectronics.

Semiconductor Optoelectronic Devices

  • 1st Edition
  • January 7, 2003
  • Joachim Piprek
  • English
  • Hardback
    9 7 8 - 0 - 1 2 - 5 5 7 1 9 0 - 6
  • eBook
    9 7 8 - 0 - 0 8 - 0 4 6 9 7 8 - 2
Optoelectronics has become an important part of our lives. Wherever light is used to transmit information, tiny semiconductor devices are needed to transfer electrical current into optical signals and vice versa. Examples include light emitting diodes in radios and other appliances, photodetectors in elevator doors and digital cameras, and laser diodes that transmit phone calls through glass fibers. Such optoelectronic devices take advantage of sophisticated interactions between electrons and light. Nanometer scale semiconductor structures are often at the heart of modern optoelectronic devices. Their shrinking size and increasing complexity make computer simulation an important tool to design better devices that meet ever rising perfomance requirements. The current need to apply advanced design software in optoelectronics follows the trend observed in the 1980's with simulation software for silicon devices. Today, software for technology computer-aided design (TCAD) and electronic design automation (EDA) represents a fundamental part of the silicon industry. In optoelectronics, advanced commercial device software has emerged recently and it is expected to play an increasingly important role in the near future. This book will enable students, device engineers, and researchers to more effectively use advanced design software in optoelectronics.

Nano-Physics and Bio-Electronics

  • 1st Edition
  • April 16, 2002
  • T. Chakraborty + 2 more
  • English
  • Hardback
    9 7 8 - 0 - 4 4 4 - 5 0 9 9 3 - 2
  • eBook
    9 7 8 - 0 - 0 8 - 0 5 3 7 2 4 - 5
This book is a collection of some of the invited talks presented at the international meeting held at the Max Planck Institut fuer Physik Komplexer Systeme, Dresden, Germany during August 6-30, 2001, on the rapidly developing field of nanoscale science in science and bio-electronics Semiconductor physics has experienced unprecedented developments over the second half of the twentieth century. The exponential growth in microelectronic processing power and the size of dynamic memorie has been achieved by significant downscaling of the minimum feature size. Smaller feature sizes result in increased functional density, faster speed, and lower costs. In this process one is reaching the limits where quantum effects and fluctuations are beginning to play an important role. This book reflects the achievements of the present times and future directions of research on nanoscopic dimensions.

Advances in Metal and Semiconductor Clusters

  • 1st Edition
  • Volume 5
  • July 10, 2001
  • M.A. Duncan
  • English
  • eBook
    9 7 8 - 0 - 0 8 - 0 4 9 6 5 7 - 3
In previous volumes in this series, Advances in Metal and Semiconductor Clusters, the focus has been on atomic clusters of metals, semiconductors and carbon. Fundamental gas phase studies have been surveyed, and most recently scientists have explored new materials which can be produced from clusters or cluster precursors. In this latest volume, the focus shifts to clusters composed primarily of non-metal molecules or atoms which have one or more metal atoms seeded into the cluster as an impurity. These clusters provide model systems for metal ion solvation processes and metal-ligand interactions.Metal-ligand bonding underlies the vast fields of organometallic chemistry, transition metal chemistry and homogeneous catalysis. Catalytic activity, ligand displacement reactions and photochemical activity depend on the specific details of metal-ligand bonding. Likewise, metal ions are ubiquitous in chemistry and biology and weaker electrostatic interactions play a leading role in their function. In solution, metals exist in different charge states depending on the conditions, and the solvation environment strongly influences their chemistry. Many enzymes have metal ions at their active sites, and electrostatic interactions influence the selectivity for metal ion transport through cell membranes. Metal ions (e.g., Mg+, Ca+) are deposited into the earth's atmosphere by meteor ablation, resulting in a rich variety of atmospheric chemistry. Similarly, metal ions ( Mg+) have been observed in planetary atmospheres and in the impact of the comet Shoemaker-Levy 9 on Jupiter. In various circumstances, the electrostatic interactions of metal ions determine the outcome of significant chemistry. Cluster chemistry has made significant contributions to the understanding of these stronger metal ligand interactions and weaker metal ion solvation interactions. In this volume, the authors explore a variety of work in these general areas, where new cluster science techniques in the gas phase have made it possible to synthesize new kinds of complexes with metals and to measure their properties in detail.