Books in Electronic transport in condensed matter

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Basic Properties of Semiconductors

• 1st Edition
• April 19, 2016
• P.T. Landsberg
• English
• eBook 978-1-4832-9110-9

  9 7 8 - 1 - 4 8 3 2 - 9 1 1 0 - 9

Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title.Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form.The first three chapters discuss various aspects of modern band theory and the next two analyze impurities in semiconductors. Then follow chapters on semiconductor statistics and on surfaces, interfaces and band offsets as they occur in heterojunctions. Chapters 8 to 19 report on newer topics (though a survey of transport properties of carriers is also included). Among these are transport of hot electrons, and thermoelectric effects including here and elsewhere properties of low-dimensional and mesoscopic structures. The electron-hole liquid, the quantum Hall effect, localisation, ballistic transport, coherence in superlattices, current ideas on tunnelling and on quantum confinement and scattering processes are also covered.

Wide-band-gap Semiconductors

• 1st Edition
• December 2, 2012
• C.G. Van de Walle
• English
• eBook 978-0-444-59917-9

  9 7 8 - 0 - 4 4 4 - 5 9 9 1 7 - 9

Wide-band-gap semiconductors have been a research topic for many decades. However, it is only in recent years that the promise for technological applications came to be realized; simultaneously an upsurge of experimental and theoretical activity in the field has been witnessed. Semiconductors with wide band gaps exhibit unique electronic and optical properties. Their low intrinsic carrier concentrations and high breakdown voltage allow high-temperature and high-power applications (diamond, SiC etc.). The short wavelength of band-to-band transitions allows emission in the green, blue, or even UV region of the spectrum (ZnSe, GaN, etc.). In addition, many of these materials have favorable mechanical and thermal characteristics.These proceedings reflect the exciting progress made in this field. Successful p-type doping of ZnSe has recently led to the fabrication of blue-green injection lasers in ZnSe; applications of short-wavelength light-emitting devices range from color displays to optical storage. In SiC, advances in growth techniques for bulk as well as epitaxial material have made the commercial production of high-temperature and high-frequency devices possible. For GaN, refinement of growth procedures and new ways of obtaining doped material have resulted in blue-light-emitting diodes and opened the road to the development of laser diodes. Finally, while the quality of artificial diamond is not yet high enough for electronic applications, the promise it holds in terms of unique material properties is encouraging intense activity in the field.This volume contains contributions from recognized experts presently working on different material systems in the field. The papers cover the theoretical, experimental and application-oriented aspects of this exciting topic.

Introduction to Wave Scattering, Localization, and Mesoscopic Phenomena

• 1st Edition
• April 4, 1995
• Ping Sheng
• English
• eBook 978-0-08-053506-7

  9 7 8 - 0 - 0 8 - 0 5 3 5 0 6 - 7

This book gives readers a coherent picture of waves in disordered media, including multiple scattered waves. The book is intended to be self-contained, with illustrated problems and solutions at the end of each chapter to serve the double purpose of filling out the technical and mathematical details and giving the students exercises if used as a course textbook.The study of wave behavior in disordered media has applications in:Condensed matter physics (semi and superconductor nanostructures and mesoscopic phenomena)Materials science/analytical chemistry (analysis of composite and crystalline structures and properties)Optics and electronics (microelectronic and optoelectronic devices)Geology (seismic exploration of Earths subsurface)

Electron Dynamics of Diode Regions

• 1st Edition
• January 1, 1966
• Charles K. Birdsall
• English
• eBook 978-0-323-16241-8

  9 7 8 - 0 - 3 2 3 - 1 6 2 4 1 - 8

Electron Dynamics of Diode Regions describes the model construction and analysis of motion of charged particles of diode regions in time-varying fields. The models analyzed are simplified versions of parts of practical devices, primarily active microwave devices, tubes, and semiconductor amplifiers, while the most striking results obtained are due to electron inertia and space-charge effects in terms of laboratory observable. This book is composed of seven chapters, and begins with an introduction to the general concepts of time dependent flow, including induced current, the techniques of linearization, calculating variational transit time, and obtaining equivalent circuits. The following chapters present the classical linear analysis, which includes the space-charge effects, with several applications. These chapters also explore the existence of a maximum stable current in a space-charge limited diode. The discussion then shifts to the basics of high velocity, klystron, gap with nonuniform field distributions, and the application of the multicavity klystron. This text further covers the analysis and examples of crossed-field gaps. The final chapters deal with the fundamentals of velocity and current distributions obtained from common electron emitters, with some attempt to show how the multivelocity streams evolve into single-velocity equivalents needed for the methods of earlier chapters. Results of applying the Lagrangian starting analysis to semiconductor diode regions, necessarily from a new equation of motion, are also provided. This book is intended for graduate courses, seminars, and research studies.