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Books in Electronic transport in condensed matter

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    • Wide-band-gap Semiconductors

      • 1st Edition
      • C.G. Van de Walle
      • English
      Wide-band-gap semiconductors have been a research topic for many decades. However, it is only in recent years that the promise for technological applications came to be realized; simultaneously an upsurge of experimental and theoretical activity in the field has been witnessed. Semiconductors with wide band gaps exhibit unique electronic and optical properties. Their low intrinsic carrier concentrations and high breakdown voltage allow high-temperature and high-power applications (diamond, SiC etc.). The short wavelength of band-to-band transitions allows emission in the green, blue, or even UV region of the spectrum (ZnSe, GaN, etc.). In addition, many of these materials have favorable mechanical and thermal characteristics.Thes... proceedings reflect the exciting progress made in this field. Successful p-type doping of ZnSe has recently led to the fabrication of blue-green injection lasers in ZnSe; applications of short-wavelength light-emitting devices range from color displays to optical storage. In SiC, advances in growth techniques for bulk as well as epitaxial material have made the commercial production of high-temperature and high-frequency devices possible. For GaN, refinement of growth procedures and new ways of obtaining doped material have resulted in blue-light-emitting diodes and opened the road to the development of laser diodes. Finally, while the quality of artificial diamond is not yet high enough for electronic applications, the promise it holds in terms of unique material properties is encouraging intense activity in the field.This volume contains contributions from recognized experts presently working on different material systems in the field. The papers cover the theoretical, experimental and application-oriented aspects of this exciting topic.

    • Spectroscopy of Nonequilibrium Electrons and Phonons

      • 1st Edition
      • C.V. Shank + 1 more
      • English
      The physics of nonequilibrium electrons and phonons in semiconductors is an important branch of fundamental physics that has many practical applications, especially in the development of ultrafast and ultrasmall semiconductor devices. This volume is devoted to different trends in the field which are presently at the forefront of research. Special attention is paid to the ultrafast relaxation processes in bulk semiconductors and two-dimensional semiconductor structures, and to their study by different spectroscopic methods, both pulsed and steady-state. The evolution of energy and space distribution of nonequilibrium electrons and the relaxation kinetics of hot carriers and phonons are considered under various conditions such as temperature, doping and pumping intensity by leading experts in the field.

    • Electron Dynamics of Diode Regions

      • 1st Edition
      • Charles K. Birdsall
      • English
      Electron Dynamics of Diode Regions describes the model construction and analysis of motion of charged particles of diode regions in time-varying fields. The models analyzed are simplified versions of parts of practical devices, primarily active microwave devices, tubes, and semiconductor amplifiers, while the most striking results obtained are due to electron inertia and space-charge effects in terms of laboratory observable. This book is composed of seven chapters, and begins with an introduction to the general concepts of time dependent flow, including induced current, the techniques of linearization, calculating variational transit time, and obtaining equivalent circuits. The following chapters present the classical linear analysis, which includes the space-charge effects, with several applications. These chapters also explore the existence of a maximum stable current in a space-charge limited diode. The discussion then shifts to the basics of high velocity, klystron, gap with nonuniform field distributions, and the application of the multicavity klystron. This text further covers the analysis and examples of crossed-field gaps. The final chapters deal with the fundamentals of velocity and current distributions obtained from common electron emitters, with some attempt to show how the multivelocity streams evolve into single-velocity equivalents needed for the methods of earlier chapters. Results of applying the Lagrangian starting analysis to semiconductor diode regions, necessarily from a new equation of motion, are also provided. This book is intended for graduate courses, seminars, and research studies.