Books in Optical materials

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Scanning Tunneling Microscopy

1st Edition
Volume 27
March 25, 1993
Joseph A. Stroscio + 1 more
English
eBook
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Scanning tunneling microscopy (STM) and its extensions have become revolutionary tools in the fields of physics, materials science, chemistry, and biology. These new microscopies have evolved from their beginnings asresearch aids to their current use as commercial tools in the laboratory and on the factory floor. New wonders continue to unfold as STM delivers atomic scale imaging and electrical characterization of the newly emerging nanometer world. This volume in the METHODS OF EXPERIMENTAL PHYSICS Series describes the basics of scanning tunneling microscopy, provides a fundamental theoretical understanding of the technique and a thorough description of the instrumentation, and examines numerous examples and applications. Written by the pioneers of the field, this volume is an essential handbook for researchers and users of STM, as well as a valuable resource for libraries.

Semiconductors and Semimetals

1st Edition
Volume 37
December 3, 1992
Katherine T. Faber + 1 more
English
eBook
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Solid State Physics

1st Edition
Volume 45
June 17, 1991
Henry Ehrenreich + 1 more
English
eBook
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Hydrogen in Semiconductors

1st Edition
Volume 34
April 23, 1991
Jacques I. Pankove + 1 more
English
eBook
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Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors.