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Hydrogen in Semiconductors
Hydrogen in Silicon
- 1st Edition, Volume 34 - April 23, 1991
- Editors: Jacques I. Pankove, Noble M. Johnson
- Language: English
- eBook ISBN:9 7 8 - 0 - 0 8 - 0 8 6 4 3 1 - 0
Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much… Read more
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Request a sales quoteHydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors.
Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference
Scientists and engineers in the fields of electronic materials and devices and materials science as well as technical libraries.
J.I. Pankove and N.M. Johnson, Introduction. C.H. Seager, Hydrogenation Methods. J.I. Pankove, Hydrogenation of Defects in Crystalline Silicon. J.W. Corbett, P. De*abak, U.V. Desnica, and S.J. Pearton, Hydrogen Passivation of Damage Centers in Semiconductors. S.J. Pearton, Neutralization of Deep Levels in Silicon. J.I. Pankove, Neutralization of Shallow Acceptors in Silicon. N.M. Johnson, Neutralization of Donor Dopants and Formation of Hydrogen-Induced Defects in n-type Silicon. M. Stavola and S.J. Pearton, Vibrational Spectroscopy of Hydrogen-Related Defects in Silicon. A.D. Marwick, Hydrogen in Semiconductors: Ion Beam Techniques. C. Herring and N.M. Johnson, Hydrogen Migration and Solubility in Silicon. E.E. Haller, Hydrogen-Related Phenomena in Crystalline Germanium. J. Kakalios, Hydrogen Diffusion in Amorphous Silicon. J. Chevallier, B. Clerjaud, and B. Pajot, Neutralization of Defects and Dopants in III*b1V Semiconductors. G.G. DeLeo and W.B. Fowler, Computational Studies of Hydrogen-Containing Complexes in Semiconductors. R.F. Kiefl and T.L. Estle, Muonium in Semiconductors. C.G. Van de Walle, Theory of Isolated Interstitial Hydrogen and Muonium in Crystalline Semiconductors. Each chapter includes references. Index.
- No. of pages: 648
- Language: English
- Edition: 1
- Volume: 34
- Published: April 23, 1991
- Imprint: Academic Press
- eBook ISBN: 9780080864310
JP
Jacques I. Pankove
Affiliations and expertise
University of Colorado, Boulder, U.S.A.NJ
Noble M. Johnson
Affiliations and expertise
Xerox Palo Alto Research Center