VLSI Metallization
- 1st Edition, Volume 15 - September 19, 2014
- Imprint: Academic Press
- Editors: Norman G. Einspruch, Simon S. Cohen, Gennady Sh. Gildenblat
- Language: English
- Paperback ISBN:9 7 8 - 1 - 4 8 3 2 - 0 4 3 8 - 3
- eBook ISBN:9 7 8 - 1 - 4 8 3 2 - 1 7 8 1 - 9
VLSI Electronics Microstructure Science, Volume 15: VLSI Metallization discusses the various issues and problems related to VLSI metallization. It details the available solutions… Read more
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VLSI Electronics Microstructure Science, Volume 15: VLSI Metallization discusses the various issues and problems related to VLSI metallization. It details the available solutions and presents emerging trends. This volume is comprised of 10 chapters. The two introductory chapters, Chapter 1 and 2 serve as general references for the electrical and metallurgical properties of thin conducting films. Subsequent chapters review the various aspects of VLSI metallization. The order of presentation has been chosen to follow the common processing sequence. In Chapter 3, some relevant metal deposition techniques are discussed. Chapter 4 presents the methods of VLSI lithography and etching. Conducting films are first deposited at the gate definition step; therefore, the issues related to gate metallization are discussed next in Chapter 5.In Chapter 6, contact metallization is elaborated, and Chapter 7 is devoted to multilevel metallization schemes. Long-time reliability is the subject of Chapter 8, which discusses the issues of contact and interconnect electromigration. GaAs metallization is tackled in Chapter 9. The volume concludes with a general discussion of the functions of interconnect systems in VLSI. Materials scientists, processing and design engineers, and device physicists will find the book very useful.
Preface
Chapter 1 Electrical Properties of Thin Conducting Films
I. Introduction
II. The Physics of Transport Phenomena in Thin Films
III. Electromigration in Thin Metal Lines
IV. The Interconnect Impedance
V. Test Structures
References
Chapter 2 Metallurgical Properties of Thin Conducting Films
I. Introduction
II. Theoretical Background on Thin-Film Properties
III. Metallurgical Properties of Thin Films
IV. Summary and Future Trends
References
Chapter 3 Metallization Techniques
I. General Considerations
II. Deposition Techniques
References
Chapter 4 Methods of Metal Patterning and Etching
I. Introduction
II. Lithography
III. Metal Etching
IV. Summary
References
Chapter 5 Gate Metallization
I. Introduction
II. Choice of Gate Materials
III. Metal Gate Electrodes
IV. Polysilicon and Silicide Gate Electrodes
V. Transparent Conducting Electrodes
VI. Concluding Remarks
References
Chapter 6 Contact Metallization
I. Introduction
II. Specific Contact Resistance
III. The Impact of Series Resistance on the Device Performance
IV. Scaling of Contact Resistance
V. Shallow Junctions
VI. Contact Fabrication Procedures
VII. Ohmic Contacts to Silicon
Appendix
References
Chapter 7 Multilevel Metallization Schemes
I. Introduction
II. Need for Multilevel Metallization
III. Historical Perspective
IV. Multilevel Metallization Issues
V. Materials Used for Multilevel Metallization Schemes
VI. Conductor Systems
VII. Dielectric Systems
VIII. Planarization and Via Technologies
IX. Yield, Reliability, and Other Issues
X. Concluding Remarks
References
Chapter 8 Electromigration in Interconnects and Contacts
I. Introduction
II. Background
III. Measurement Techniques
IV. The Design of Reliable Devices
V. Future Perspectives
References
Chapter 9 Metallization Technology for GaAs Integrated Circuits
I. Introduction
II. GaAs Integrated Circuit Metallization Design Considerations
III. GaAs Contact and Interconnect Systems
IV. Metallization Fabrication Technology for GaAs
V. Yield and Reliability
VI. Future Trends
References
Chapter 10 Interconnections, Dissipation, and Computation
I. Introduction
II. Interconnections in VLSI
III. Off-Chip Interconnections
IV. Dissipation and Computation
V. Conclusions
References
Index
- Edition: 1
- Volume: 15
- Published: September 19, 2014
- Imprint: Academic Press
- Language: English
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