Tunnelling and Negative Resistance Phenomena in Semiconductors

Editors Preface

Preface

Table of Symbols Used

Chapter 1. Quantum Mechanical Tunnelling


1.1. Introduction: The Need for Revision of the Theory


1.1.1. Existing Concepts of Tunnelling


1.1.2. Tunnelling in MIM, MIS, and Schottky Junctions


1.1.3. pn Junction Tunnelling


1.1.4. Tunnelling in Superconductors


1.1.5. Atomic Tunnelling in Solids


1.1.6. A Need for a Revision of the Theory


1.2. Tunnelling Probability


1.3. Time for Electron Tunnelling


1.4. Tunnelling Current Density


1.5. Conclusions

References

Chapter 2. Tunnelling in Esaki Junctions


2.1. Introduction


2.2. Effects of Heavy Doping


2.2.1. First-Order Calculation of the Density of States Function


2.2.2. Second-Order Calculation of the Density of States Function


2.2.3. Calculation of Percentage of Ionization


2.3. Tunnelling Probability


2.4. Tunnelling Current


2.4.1. Direct Tunnelling Current


2.4.2. Indirect Tunnelling Current


2.5. Excess Current


2.6. Thermal Current in Tunnel Diodes


2.7. Prediction of Tunnel Diode IV Characteristics


2.8. Dependence of Tunnel Characteristics on Different Physical Parameters

References

Chapter 3. Circuitry and Technology of yn Tunnel Devices


3.1. Circuit Applications of Tunnel Diodes


3.1.1. Equivalent Circuit and Stability Considerations


3.1.2. Tunnel Diode Amplifiers


3.1.3. Tunnel Diode Oscillators


3.1.4. Tunnel Diode Mixers, Converters, and Detectors


3.1.5. Digital Applications


3.1.6. Miscellaneous Other Applications


3.2. Technology of Tunnel Diodes


3.2.1. Materials


3.2.2. Methods of Fabrication


3.2.3. Mounting


3.3. Backward Diodes


3.4. Zener Diodes

References

Chapter 4. Negative Conductance Microwave Devices


4.1. Introduction


4.2. The Bulk Negative Differential Conductivity (BNDC) Effects


4.2.1. The Ridley Hilsum Watkins (RHW) Mechanism


4.2.2. Gunn Oscillation and its Various Modes


4.2.3. Fabrication of Gunn Devices


4.2.4. Miscellaneous Aspects on Gunn Effect


4.2.5. Thermistor


4.2.6. Cryosar


4.2.7. Superlattice Device


4.3. The Impact Avalanche Transit Time (IMPATT) Devices


4.3.1. Qualitative Device Consideration


4.3.2. Analysis of the Device


4.3.3. Other IMPATT structures


4.3.4. Conclusions

References

Chapter 5. Switching Devices


5.1. Introduction


5.2. Unijunction Transistor


5.2.1. Description of the Device


5.2.2. Principles of Operation


5.2.3. Analysis of the Device


5.2.4. Applications of Unijunction Transistors


5.2.5. Fabrication of Unijunction Transistors


5.3. Four Layer pn pn Devices


5.3.1. Device Features


5.3.2. Explanation of the Device Characteristics


5.3.3. Turn-On and Turn-Off Procedures


5.3.4. Typical Device Applications


5.3.5. Device Fabrication


5.4. Avalanche Injection Diodes


5.5. pnI (Insulator) M (Metal) Devices


5.6. Summary

References

Appendix. The Airy Function and its Properties

Bibliography

A. Physics and Technology of Tunnel Diodes

B. Circuit Applications of Tunnel Diodes

C. Metal Insulator Metal Tunnelling

D. Tunnelling in Metal Insulator Semiconductor and Schottky Junctions

E. Superconductive Tunnelling

Index