TSV 3D RF Integration
High Resistivity Si Interposer Technology
- 1st Edition - April 27, 2022
- Imprint: Elsevier
- Authors: Shenglin Ma, Yufeng Jin
- Language: English
- Paperback ISBN:9 7 8 - 0 - 3 2 3 - 9 9 6 0 2 - 0
- eBook ISBN:9 7 8 - 0 - 3 2 3 - 9 9 6 0 3 - 7
TSV 3D RF Integration: High Resistivity Si Interposer Technology systematically introduces the design, process development and application verification of high-resi… Read more
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Request a sales quoteTSV 3D RF Integration: High Resistivity Si Interposer Technology systematically introduces the design, process development and application verification of high-resistivity silicon interpose technology, addressing issues of high frequency loss and high integration level. The book includes a detailed demonstration of the design and process development of Hr-Si interposer technology, gives case studies, and presents a systematic literature review. Users will find this to be a resource with detailed demonstrations of the design and process development of HR-Si interposer technologies, including quality monitoring and methods to extract S parameters.
A series of cases are presented, including an example of an integrated inductor, a microstrip inter-digital filter, and a stacked patch antenna. Each chapter includes a systematic and comparative review of the research literature, offering researchers and engineers in microelectronics a uniquely useful handbook to help solve problems in 3D heterogenous RF integration oriented Hr-Si interposer technology.
- Provides a detailed demonstration of the design and process development of HR-Si (High-Resistivity Silicon) interposer technology
- Presents a series of implementation case studies that detail modeling and simulation, integration, qualification and testing methods
- Offers a systematic and comparative literature review of HR-Si interposer technology by topic
- Offers solutions to problems with TSV (through silicon via) interposer technology, including high frequency loss and cooling problems
- Gives a systematic and accessible accounting on this leading technology
Engineers in microelectronics such as advanced package technology for 5G RF modules; graduate students working on microelectronics
- Cover image
- Title page
- Table of Contents
- Copyright
- About the authors
- Preface by Yufeng Jin
- Preface by Shenglin Ma
- Acknowledgments
- Chapter 1: Introduction to HR-Si interposer technology
- Abstract
- 1.1: Background
- 1.2: 3D RF heterogeneous integration scheme
- 1.3: HR-Si interposer technology
- 1.4: TGV interposer technology
- 1.5: Summary
- 1.6: Main work of this book
- References
- Chapter 2: Design, process, and electrical verification of HR-Si interposer for 3D heterogeneous RF integration
- Abstract
- 2.1: Introduction
- 2.2: Design and fabrication process of HR-Si TSV interposer
- 2.3: Design and analysis of RF transmission structure built on HR-Si TSV interposer
- 2.4: Research on HR-Si TSV interposer fabrication process
- 2.5: Electrical characteristics analysis of transmission structure on HR-Si TSV interposer
- 2.6: Conclusion
- References
- Chapter 3: Design, verification, and optimization of novel 3D RF TSV based on HR-Si interposer
- Abstract
- 3.1: Introduction
- 3.2: HR-Si TSV-based coaxial-like transmission structure
- 3.3: Redundant RF TSV transmission structure
- 3.4: Sample processing and test result analysis
- 3.5: Optimization of HR-Si TSV interposer
- 3.6: Conclusion
- References
- Chapter 4: HR-Si TSV integrated inductor
- Abstract
- 4.1: Introduction
- 4.2: HR-Si TSV interposer integrated planar inductor
- 4.3: Research on 3D inductor based on HR-Si interposer
- 4.4: Summary
- References
- Chapter 5: Verification of 2.5D/3D heterogeneous RF integration of HR-Si interposer
- Abstract
- 5.1: Introduction
- 5.2: Four-channel 2.5D heterogeneous integrated L-band receiver
- 5.3: 3D heterogeneous integrated channelized frequency conversion receiver based on HR-Si interposer
- 5.4: Conclusions
- References
- Chapter 6: HR-Si interposer embedded microchannel
- Abstract
- 6.1: Introduction
- 6.2: Design of a HR-Si interposer embedded microchannel
- 6.3: Thermal characteristics analysis of a TSV interposer embedded microchannel
- 6.4: Process development of a TSV interposer embedded microchannel
- 6.5: Characterization of cooling capacity of HR-Si interposer with an embedded microchannel
- 6.6: Evaluation of HR-Si interposer embedded with a cooling microchannel
- 6.7: Application verification of HR-Si interposer embedded with microchannel
- 6.8: Conclusions
- References
- Chapter 7: Patch antenna in stacked HR-Si interposers
- Abstract
- 7.1: Introduction
- 7.2: Theoretical basis of patch antenna
- 7.3: Design of a patch antenna in stacked HR-Si interposers
- 7.4: Processing of a patch antenna in stacked HR-Si interposers
- 7.5: Test and analysis of patch antenna in stacked HR-Si TSV interposer
- 7.6: Summary
- References
- Chapter 8: Through glass via technology
- Abstract
- 8.1: Introduction
- 8.2: TGV fabrication
- 8.3: Metallization of TGV
- 8.4: Passive devices based on TGV technology
- 8.5: Embedded glass fan-out wafer-level package technology
- 8.6: 2.5D heterogeneous integrated L-band receiver based on TGV interposer
- 8.7: Conclusions
- References
- Chapter 9: Conclusion and outlook
- Abstract
- Appendix 1: Abbreviations
- Appendix 2: Nomenclature
- Appendix 3: Conversion factors
- Index
- Edition: 1
- Published: April 27, 2022
- No. of pages (Paperback): 292
- No. of pages (eBook): 292
- Imprint: Elsevier
- Language: English
- Paperback ISBN: 9780323996020
- eBook ISBN: 9780323996037
SM
Shenglin Ma
Shenglin Ma is Associate Professor in the Department of Mechanical and Electrical Engineering at Xiamen University, China. He received his PhD from Peking University and has also been a guest researcher with the National Key Laboratory of Science and Technology in Micro/Nano Fabrication at Peking University. He has over 50 publications and 20 patents to his name, and his research focuses on TSV based 3D integration technology, MEMS and its applications.
Affiliations and expertise
Associate Professor, Department of Mechanical and Electrical Engineering, Xiamen University, ChinaYJ
Yufeng Jin
YuFeng Jin is a Professor at Peking University, China. He also directed the National Key Laboratory of Science and Technology on Micro/Nano Fabrication for a number of years. He received his PhD from Southeast University, China. He has written three books on advanced packing technologies, and his research focus includes MEMS sensors and TSV related 3D integration of microsystems.
Affiliations and expertise
Professor, Peking University, ChinaRead TSV 3D RF Integration on ScienceDirect