TSV 3D RF Integration
High Resistivity Si Interposer Technology
- 1st Edition - April 27, 2022
- Authors: Shenglin Ma, Yufeng Jin
- Language: English
- Paperback ISBN:9 7 8 - 0 - 3 2 3 - 9 9 6 0 2 - 0
- eBook ISBN:9 7 8 - 0 - 3 2 3 - 9 9 6 0 3 - 7
TSV 3D RF Integration: High Resistivity Si Interposer Technology systematically introduces the design, process development and application verification of high-resi… Read more
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Request a sales quoteTSV 3D RF Integration: High Resistivity Si Interposer Technology systematically introduces the design, process development and application verification of high-resistivity silicon interpose technology, addressing issues of high frequency loss and high integration level. The book includes a detailed demonstration of the design and process development of Hr-Si interposer technology, gives case studies, and presents a systematic literature review. Users will find this to be a resource with detailed demonstrations of the design and process development of HR-Si interposer technologies, including quality monitoring and methods to extract S parameters.
A series of cases are presented, including an example of an integrated inductor, a microstrip inter-digital filter, and a stacked patch antenna. Each chapter includes a systematic and comparative review of the research literature, offering researchers and engineers in microelectronics a uniquely useful handbook to help solve problems in 3D heterogenous RF integration oriented Hr-Si interposer technology.
- Provides a detailed demonstration of the design and process development of HR-Si (High-Resistivity Silicon) interposer technology
- Presents a series of implementation case studies that detail modeling and simulation, integration, qualification and testing methods
- Offers a systematic and comparative literature review of HR-Si interposer technology by topic
- Offers solutions to problems with TSV (through silicon via) interposer technology, including high frequency loss and cooling problems
- Gives a systematic and accessible accounting on this leading technology
Engineers in microelectronics such as advanced package technology for 5G RF modules; graduate students working on microelectronics
- Cover image
- Title page
- Table of Contents
- Copyright
- About the authors
- Preface by Yufeng Jin
- Preface by Shenglin Ma
- Acknowledgments
- Chapter 1: Introduction to HR-Si interposer technology
- Abstract
- 1.1: Background
- 1.2: 3D RF heterogeneous integration scheme
- 1.3: HR-Si interposer technology
- 1.4: TGV interposer technology
- 1.5: Summary
- 1.6: Main work of this book
- References
- Chapter 2: Design, process, and electrical verification of HR-Si interposer for 3D heterogeneous RF integration
- Abstract
- 2.1: Introduction
- 2.2: Design and fabrication process of HR-Si TSV interposer
- 2.3: Design and analysis of RF transmission structure built on HR-Si TSV interposer
- 2.4: Research on HR-Si TSV interposer fabrication process
- 2.5: Electrical characteristics analysis of transmission structure on HR-Si TSV interposer
- 2.6: Conclusion
- References
- Chapter 3: Design, verification, and optimization of novel 3D RF TSV based on HR-Si interposer
- Abstract
- 3.1: Introduction
- 3.2: HR-Si TSV-based coaxial-like transmission structure
- 3.3: Redundant RF TSV transmission structure
- 3.4: Sample processing and test result analysis
- 3.5: Optimization of HR-Si TSV interposer
- 3.6: Conclusion
- References
- Chapter 4: HR-Si TSV integrated inductor
- Abstract
- 4.1: Introduction
- 4.2: HR-Si TSV interposer integrated planar inductor
- 4.3: Research on 3D inductor based on HR-Si interposer
- 4.4: Summary
- References
- Chapter 5: Verification of 2.5D/3D heterogeneous RF integration of HR-Si interposer
- Abstract
- 5.1: Introduction
- 5.2: Four-channel 2.5D heterogeneous integrated L-band receiver
- 5.3: 3D heterogeneous integrated channelized frequency conversion receiver based on HR-Si interposer
- 5.4: Conclusions
- References
- Chapter 6: HR-Si interposer embedded microchannel
- Abstract
- 6.1: Introduction
- 6.2: Design of a HR-Si interposer embedded microchannel
- 6.3: Thermal characteristics analysis of a TSV interposer embedded microchannel
- 6.4: Process development of a TSV interposer embedded microchannel
- 6.5: Characterization of cooling capacity of HR-Si interposer with an embedded microchannel
- 6.6: Evaluation of HR-Si interposer embedded with a cooling microchannel
- 6.7: Application verification of HR-Si interposer embedded with microchannel
- 6.8: Conclusions
- References
- Chapter 7: Patch antenna in stacked HR-Si interposers
- Abstract
- 7.1: Introduction
- 7.2: Theoretical basis of patch antenna
- 7.3: Design of a patch antenna in stacked HR-Si interposers
- 7.4: Processing of a patch antenna in stacked HR-Si interposers
- 7.5: Test and analysis of patch antenna in stacked HR-Si TSV interposer
- 7.6: Summary
- References
- Chapter 8: Through glass via technology
- Abstract
- 8.1: Introduction
- 8.2: TGV fabrication
- 8.3: Metallization of TGV
- 8.4: Passive devices based on TGV technology
- 8.5: Embedded glass fan-out wafer-level package technology
- 8.6: 2.5D heterogeneous integrated L-band receiver based on TGV interposer
- 8.7: Conclusions
- References
- Chapter 9: Conclusion and outlook
- Abstract
- Appendix 1: Abbreviations
- Appendix 2: Nomenclature
- Appendix 3: Conversion factors
- Index
- No. of pages: 292
- Language: English
- Edition: 1
- Published: April 27, 2022
- Imprint: Elsevier
- Paperback ISBN: 9780323996020
- eBook ISBN: 9780323996037
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Shenglin Ma
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