Theory of Semiconductor Junction Devices

Preface

Acknowledgments

Fundamental Constants, Units and Symbols

References

Chapter 1. General Introduction


1.1. Introductory Survey


1.2. Electrical Conductivity


1.3. The Hall Effect


1.4. Compound Semiconductors

Chapter 2. Basic Theory I. The Homogeneous Semiconductor


2.1. Insulators, Semiconductors and Metals


2.2. The Fermi-Dirac Distribution Law


2.3. The Extrinsic Semiconductor


2.3.1. Addition of Group V Impurities


2.3.2. Addition of Group III Impurities


2.3.3. Electron and Hole Densities in the Extrinsic Semiconductor


2.3.4. Addition of Both Donor and Acceptor Impurities


2.3.5. The Extrinsic Semiconductor at Very High and Very Low Temperatures


2.4. General Observations


2.4.1. Degeneracy


2.4.2. Other Impurities in Silicon and Germanium


2.4.3. Doping of Compound Semiconductors


2.4.4. Comparison of Models of Chapters 1 and 2

Chapter 3. Basic Theory II. The Effect of Inhomogeneities and External Forces


3.1. The Electric Field


3.2. Charge Disturbance in the Semiconductor


3.2.1. The Majority Carriers


3.2.2. The Minority Carriers


3.3. Diffusion and Recombination Processes


3.3.1. Carrier Diffusion


3.3.2. Recombination of Excess Carriers


3.3.3. Diffusion and Recombination


3.4. Injection of Carriers into a Semiconductor

Chapter 4. Basic Theory III. Dynamical Considerations


4.1. Recombination, Generation and Trapping Processes


4.2. Photo-excitation


4.3. The Cadmium Sulphide Radiation Detector

Chapter 5. The p-n Junction I. Theory


5.1. Potential Difference Across the p-n Junction


5.2. Current Flow in the Junction Region


5.3. Junction with an Applied Voltage


5.4. Diffusion of Minority Carriers Outwards from the Junction


5.5. Current Flow due to Minority Carrier Diffusion

Chapter 6. The p-n Junction II. Devices


6.1. Basic Characteristics of the Junction with Negative Bias Applied


6.2. Effective Capacity of the p-n Junction


6.3. Current Flow due to the Generation of Electron-hole Pairs


6.4. Electrical Breakdown in the Junction


6.4.1. Avalanche Breakdown


6.4.2. Zener Breakdown


6.4.3. Tunnel Effects (the Esaki or Tunnel Diode)


6.4.4. The Backward Diode

Chapter 7. The Junction or Injection Transistor I


7.1. Theory


7.2. The Operation of the Transistor as a Simple Amplifying Element


7.3. The Manufacture of Transistors

Appendix

Chapter 8. The Junction Transistor II


8.1. High-frequency Operation


8.2. Recent Development in Transistor Fabrication Techniques


8.2.1. The Mesa Transistor


8.2.2. The Planar Transistor


8.3. Theory of the Drift Transistor

Chapter 9. The p-n-p-n Controlled Rectifier


9.1. Some Transistor Characteristics of Special Relevance


9.2. Theory of Switching in the p-n-p-n Crystal

Chapter 10. The Field Effect Transistor (F.E.T.)


10.1. Operating Principles of the F.E.T.


10.2. Construction and Operation of the F.E.T.

Index