Theory of Semiconductor Junction Devices
A Textbook for Electrical and Electronic Engineers
- 1st Edition - January 1, 1967
- Imprint: Pergamon
- Author: J. H. Leck
- Language: English
- Paperback ISBN:9 7 8 - 1 - 4 8 3 1 - 2 4 4 8 - 3
- Hardback ISBN:9 7 8 - 0 - 0 8 - 0 1 2 1 7 3 - 4
- eBook ISBN:9 7 8 - 1 - 4 8 3 1 - 5 6 9 0 - 3
Theory of Semiconductor Junction Devices: A Textbook for Electrical and Electronic Engineers presents the simplified numerical computation of the fundamental electrical equations,… Read more
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Request a sales quoteTheory of Semiconductor Junction Devices: A Textbook for Electrical and Electronic Engineers presents the simplified numerical computation of the fundamental electrical equations, specifically Poisson's and the Hall effect equations. This book provides the fundamental theory relevant for the understanding of semiconductor device theory. Comprised of 10 chapters, this book starts with an overview of the application of band theory to the special case of semiconductors, both intrinsic and extrinsic. This text then describes the electrical properties of conductivity, semiconductors, and Hall effect leading to the main topic of p–n junction theory. Other chapters examine the characteristics of the p–n junction in detail as this forms the fundamental element in the majority of semiconductor devices. The final chapter deals with the field effect transistor, which is known as the unipolar transistor. This book is a valuable resource for students of solid state electronics. Electrical and electronic engineers will also find this book useful.
Preface
Acknowledgments
Fundamental Constants, Units and Symbols
References
Chapter 1. General Introduction
1.1. Introductory Survey
1.2. Electrical Conductivity
1.3. The Hall Effect
1.4. Compound Semiconductors
Chapter 2. Basic Theory I. The Homogeneous Semiconductor
2.1. Insulators, Semiconductors and Metals
2.2. The Fermi-Dirac Distribution Law
2.3. The Extrinsic Semiconductor
2.3.1. Addition of Group V Impurities
2.3.2. Addition of Group III Impurities
2.3.3. Electron and Hole Densities in the Extrinsic Semiconductor
2.3.4. Addition of Both Donor and Acceptor Impurities
2.3.5. The Extrinsic Semiconductor at Very High and Very Low Temperatures
2.4. General Observations
2.4.1. Degeneracy
2.4.2. Other Impurities in Silicon and Germanium
2.4.3. Doping of Compound Semiconductors
2.4.4. Comparison of Models of Chapters 1 and 2
Chapter 3. Basic Theory II. The Effect of Inhomogeneities and External Forces
3.1. The Electric Field
3.2. Charge Disturbance in the Semiconductor
3.2.1. The Majority Carriers
3.2.2. The Minority Carriers
3.3. Diffusion and Recombination Processes
3.3.1. Carrier Diffusion
3.3.2. Recombination of Excess Carriers
3.3.3. Diffusion and Recombination
3.4. Injection of Carriers into a Semiconductor
Chapter 4. Basic Theory III. Dynamical Considerations
4.1. Recombination, Generation and Trapping Processes
4.2. Photo-excitation
4.3. The Cadmium Sulphide Radiation Detector
Chapter 5. The p-n Junction I. Theory
5.1. Potential Difference Across the p-n Junction
5.2. Current Flow in the Junction Region
5.3. Junction with an Applied Voltage
5.4. Diffusion of Minority Carriers Outwards from the Junction
5.5. Current Flow due to Minority Carrier Diffusion
Chapter 6. The p-n Junction II. Devices
6.1. Basic Characteristics of the Junction with Negative Bias Applied
6.2. Effective Capacity of the p-n Junction
6.3. Current Flow due to the Generation of Electron-hole Pairs
6.4. Electrical Breakdown in the Junction
6.4.1. Avalanche Breakdown
6.4.2. Zener Breakdown
6.4.3. Tunnel Effects (the Esaki or Tunnel Diode)
6.4.4. The Backward Diode
Chapter 7. The Junction or Injection Transistor I
7.1. Theory
7.2. The Operation of the Transistor as a Simple Amplifying Element
7.3. The Manufacture of Transistors
Appendix
Chapter 8. The Junction Transistor II
8.1. High-frequency Operation
8.2. Recent Development in Transistor Fabrication Techniques
8.2.1. The Mesa Transistor
8.2.2. The Planar Transistor
8.3. Theory of the Drift Transistor
Chapter 9. The p-n-p-n Controlled Rectifier
9.1. Some Transistor Characteristics of Special Relevance
9.2. Theory of Switching in the p-n-p-n Crystal
Chapter 10. The Field Effect Transistor (F.E.T.)
10.1. Operating Principles of the F.E.T.
10.2. Construction and Operation of the F.E.T.
Index
- Edition: 1
- Published: January 1, 1967
- No. of pages (eBook): 178
- Imprint: Pergamon
- Language: English
- Paperback ISBN: 9781483124483
- Hardback ISBN: 9780080121734
- eBook ISBN: 9781483156903
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