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The Physical Basis of Electronics
An Introductory Course
2nd Edition - January 1, 1974
Authors: D. J. Harris, P. N. Robson
Editor: P. Hammond
eBook ISBN:
9 7 8 - 1 - 4 8 3 1 - 5 6 5 4 - 5
The Physical Basis of Electronics: An Introductory Course, Second Edition is an 11-chapter text that discusses the physical concepts of electronic devices. This edition deals with… Read more
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The Physical Basis of Electronics: An Introductory Course, Second Edition is an 11-chapter text that discusses the physical concepts of electronic devices. This edition deals with the considerable advances in electronic techniques, from the introduction of field effect transistors to the development of integrated circuits. The opening chapters discuss the fundamentals of vacuum electronics and solid-state electronics. The subsequent chapters deal with the other components of electronic devices and their functions, including semiconductor diode and transistor as an amplifier and a switch. The discussion then shifts to several types of field-effect transistor and the production of p-n junctions, transistors, and integrated circuits. A chapter highlights the four classifications of thermionic valves commonly used in electronic devices, namely, diodes, triodes, tetrodes, and pentodes. This chapter also considers the effect of small gas introduced to the characteristics of these valves. The concluding chapters discuss some of the basic modes of operation of electronic circuits and cathode-ray tube. This edition is of great value to undergraduate electronics students.
Preface
1. Introduction to Electronics
1.1. The Impact of Electronics
1.2. The History of Electronic Devices
1.3. Basic Elements of Electronic Devices
1.4. Integration of Electronic Devices and Circuits
2. Fundamentals of Vacuum Electronics
2.1. The Evacuated Region
2.2. The Emission of Electrons from a Surface
2.3. Thermionic Emission
2.3.1. Practical Thermionic Cathodes
2.4. Electron Motion in Electric and Magnetic Fields
2.4.1. Motion in an Electric Field
2.4.2. Motion in a Magnetic Field
2.5. The Passage of Electrons through a Low-pressure Gas
2.6. Space-Charge Effects
3. Fundamentals of Solid State Electronics
3.1. The Structure of the Atom
3.1.1. Bohr Model of the Atom
3.1.2. Complex Atoms and the Periodic Table
3.2. The Nature of Certain Chemical Bonds
3.2.1. Ionic bonds
3.2.2. Homopolar or Covalent Bonds
3.2.3. Crystal Structure of Covalent Bonded Solids
3.2.4. The Metallic Bond
3.3. Insulators, Semiconductors and Conductors
3.3.1. Production of Free Charge Carriers
3.3.2. Drift Motion of Charge Carriers in an Electric Field
3.3.3. Diffusion of Charge Carriers
3.4. Conduction in Semiconductors
3.4.1. Intrinsic Semiconductors
3.4.2. Impurity Semiconductors
3.5. Behavior of Minority and Majority Carriers
3.5.1. Production and Recombination Rates
3.5.2. Minority Carrier Injection
4. The Semiconductor Junction Diode and Transistor
4.1. The Mechanism of Carrier Exchange at a Non-rectifying Metal-Semiconductor Contact
4.2. The p-n Semiconductor Diode
4.2.1. Space Charge Layers
4.2.2. The p-n Junction with an Applied Bias
4.2.3. Current in the Forward Direction
4.2.4. Current in the Reverse Direction
4.2.5. Relative Magnitudes of Hole and Electron Currents
4.2.6. Summary of Diode Action
4.3. The Junction Transistor
4.3.1. Current Distribution in a Transistor
4.4. The Transistor as an Amplifier
5. The Transistor as an Amplifier
5.1. The Grounded Base Circuit
5.1.1. Characteristics of a Grounded Base Amplifier
5.1.2. Parameters for the Grounded Base Transistor Circuit
5.1.3. Equivalent Circuit and Gain Calculations for Grounded Base
5.2. The Grounded Emitter Circuit
5.2.1. Characteristics of a Grounded Emitter Amplifier
5.2.2. Equivalent Circuit and Gain Calculations for Grounded Emitter
5.3. High-Frequency Effects
5.4. Alternative Methods of Presenting Transistor Parameters
6. The Transistor as a Switch
6.1. The Transistor as a Switch
6.2. Charge Storage Model
6.3. Transient Conditions
6.4. An Example of the Use of the Charge Control Model. Step Function Response of a Common-Emitter Current Amplifier
7. Field Effect Transistors
7.1. The Junction FET
7.2. The Insulated Gate FET
7.3. Parameters of Field Effect Devices
7.4. Amplification and Voltage Gain of the Field Effect Transistor
7.5. The FET as Switch and Variable Resistor
8. Manufacture of p-n Junctions, Transistors, and Integrated Circuits
8.1. Zone Refining and Crystal Growing
8.2. Early Methods for the Production of Junction Transistors
8.3. The Planar Technology
8.4. Epitaxial Layer Growth
8.5. The Integrated Circuit Concept
8.6. Integrated Circuit Realization
9. Thermionic Valves
9.1. The High-Vacuum Diode
9.1.1. Space-Charge Limited Conditions
9.1.2. Diode Operation
9.2. The High-Vacuum Triode Valve
9.2.1. Triode Characteristics and Parameters
9.3. The Triode as a Voltage Amplifier
9.3.1. Dynamic Characteristics
9.3.2. Triode Limitations
9.4. Multi-electrode Valves
9.4.1. The Tetrode Valve
9.4.2. The Pentode Valve
9.4.3. The Beam-Power Tetrode
9.5. Gas-Filled Valves
9.5.1. The Gas Diode
9.5.2. The Thyratron valve
9.5.3. The Neon Stabilizer Valve
10. Electronic Circuits
10.1. Applications of Electron Devices
10.2. Rectification
10.2.1. Rectifier Circuits
10.3. Detection of Radio Waves
10.4. Amplification Circuits
10.4.1. Comparison of Field Effect Devices and Bipolar Transistors as Amplifiers
10.4.2. Single-Stage Amplifier Circuits
10.4.3. Grid or Emitter Bias Circuits
10.4.4. Coupling between Amplifier Stages
10.5. Positive and Negative Feedback
10.6. Cathode Follower Type Circuits
10.7. Oscillators
10.7.1. The Tuned Drain FET Oscillator
10.7.2. Regenerative (or Positive Feedback) Switching Circuits
11. The Cathode-Ray Tube
11.1. Basic Concepts
11.2. Production of a Suitable Electron Beam
11.3. Deflecting the Electron Beam
11.3.1. Electrostatic Deflection
11.3.2. Magnetic Deflection
11.4. The Detecting Screen
11.5. Applications of the Cathode-Ray Tube
11.5.1. The Cathode-Ray Oscilloscope
11.5.2. Application to Television
Appendix
1. Values of Some Physical Constants
2. References for Further Reading
3A. Problems
3B. Solutions
Index
- No. of pages: 278
- Language: English
- Published: January 1, 1974
- Imprint: Pergamon
- eBook ISBN: 9781483156545
PH
P. Hammond
Affiliations and expertise
University of Southampton