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Silicon Integrated Circuits
Advances in Materials and Device Research
1st Edition - April 28, 1981
Editor: Dawon Kahng
9 7 8 - 1 - 4 8 3 2 - 1 4 7 7 - 1
Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important… Read more
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Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equilibrium in silicon and the development of high-power device physics; and associated technology. The text also describes the ever-evolving processing technology and the most promising approaches, along with the understanding of processing-related areas of physics and chemistry. Physicists, chemists, and engineers involved in silicon integrated circuits will find the book invaluable.
List of Contributors
Physics and Chemistry of Impurity Diffusion and Oxidation of Silicon
II. Theory of Group III and V Impurity Diffusion in Silicon
III. Thermal Oxidation of Silicon
IV. Impurity Diffusion and Defect Growth in Oxidizing Ambients
Silicon Power Field Controlled Devices and Integrated Circuits