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Semiconductor Materials for Optoelectronics and LTMBE Materials

Proceedings: Symposium A: Semiconductor Materials for Optoelectronic Devices/OEICs/Photonics and Symposium B: Low Temperature Molecular Beam Epitaxial III–V Materials: Physics/Applications of 1993 E-MRS Spring Conference Strasbourg, France, May 4–7, 1993

  • 1st Edition, Volume 40 - July 29, 2016
  • Editors: J.P. Hirtz, C. Whitehouse, H.P. Meier, H.J. von Bardeleben, M.O. Manasreh
  • Language: English
  • eBook ISBN:
    9 7 8 - 1 - 4 8 3 2 - 9 0 4 2 - 3

These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A… Read more

Semiconductor Materials for Optoelectronics and LTMBE Materials

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These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics.

Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.