Photodetectors

Materials, Devices and Applications

1st Edition - October 22, 2015
Language: English
Hardback ISBN:
9 7 8 - 1 - 7 8 2 4 2 - 4 4 5 - 1
eBook ISBN:
9 7 8 - 1 - 7 8 2 4 2 - 4 6 8 - 0

Photodetectors: Materials, Devices and Applications discusses the devices that convert light to electrical signals, key components in communication, computation, and imaging s… Read more

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Photodetectors: Materials, Devices and Applications
discusses the devices that convert light to electrical signals, key components in communication, computation, and imaging systems.

In recent years, there has been significant improvement in photodetector performance, and this important book reviews some of the key advances in the field.

Part one covers materials, detector types, and devices, and includes discussion of silicon photonics, detectors based on reduced dimensional charge systems, carbon nanotubes, graphene, nanowires, low-temperature grown gallium arsenide, plasmonic, Si photomultiplier tubes, and organic photodetectors, while part two focuses on important applications of photodetectors, including microwave photonics, communications, high-speed single photon detection, THz detection, resonant cavity enhanced photodetection, photo-capacitors and imaging.

Dedication
List of Contributors
Preface
Part I: Materials, Detector Types and Devices
- 1. Photodetectors for silicon photonic integrated circuits
  - Abstract
  - 1.1 Introduction
  - 1.2 Technology
  - 1.3 Optical properties of Si-based WGPDs
  - 1.4 Demonstrated waveguide photodiodes on silicon
  - 1.5 Conclusions and future outlook
  - References
- 2. High-speed high-sensitivity low power photodetector with electron and hole charge plasma
  - Abstract
  - 2.1 Introduction
  - 2.2 Device structure
  - 2.3 Current-voltage relationship
  - 2.4 Time response
  - 2.5 Analysis and modeling
  - 2.6 Conclusions
  - References
- 3. Carbon nanotube and graphene photonic devices
  - Abstract
  - 3.1 Introduction
  - 3.2 Nonlinearity of carbon nanotubes and graphene; saturable absorption
  - 3.3 Novel interaction schemes of propagating light with carbon nanostructures
  - 3.4 Highly efficient preparation of fiber mode-lockers
  - 3.5 Conclusion
  - References
- 4. Nanowire enabled photodetection
  - Abstract
  - 4.1 Introduction
  - 4.2 NW PD fabrication themes
  - 4.3 Recent device demonstrations
  - 4.4 Device design challenges
  - 4.5 Towards development of integrated multispectral NW PDs
  - 4.6 Conclusions and perspectives
  - Acknowledgments
  - References
- 5. Low-temperature grown Gallium Arsenide (LT-GaAs) high-speed detectors
  - Abstract
  - 5.1 Introduction
  - 5.2 Attributes of low-temperature-grown photodetectors
  - 5.3 Material systems
  - 5.4 Principle of operation for LT-GaAs photodetectors
  - 5.5 Photodetector technologies
  - 5.6 Photodetector performance
  - 5.7 Applications
  - 5.8 Conclusions and future trends
  - References
- 6. Plasmonic photodetectors
  - Abstract
  - 6.1 Introduction to surface plasmon resonances
  - 6.2 Photodetectors
  - References
- 7. Organic photodetectors
  - Abstract
  - 7.1 Introduction
  - 7.2 Organic semiconductors
  - 7.3 Device structure and operation mechanisms
  - 7.4 Photoactive materials and detectors for different spectral regions
  - 7.5 All-printed organic photodetectors fabricated by means of scalable solution-based processes
  - 7.6 Applications of organic photodetectors
  - 7.7 Conclusions
  - References
- 8. Silicon photomultipliers (SiPM)
  - Abstract
  - 8.1 Introduction
  - 8.2 SiPM physics and technology
  - 8.3 SiPM properties
  - 8.4 Arrays of SiPM’s
  - 8.5 Conclusions
  - Acknowledgments
  - References
Part II: Applications of Photodetectors
- 9. Photodetectors for microwave photonics
  - Abstract
  - 9.1 Signal generation
  - 9.2 Signal detection
  - 9.3 Applications
  - References
- 10. CMOS-integrated waveguide photodetectors for communications applications
  - Abstract
  - 10.1 Introduction
  - 10.2 Waveguide-integrated Ge-on-Si photodetectors
  - 10.3 Waveguide-integrated silicide SBPDs
  - 10.4 Conclusions
  - References
- 11. Silicon based single-photon avalanche diode (SPAD) technology for low-light and high-speed applications
  - Abstract
  - 11.1 Introduction
  - 11.2 Single-photon counting in silicon
  - 11.3 Definition of SPAD figures of merit
  - 11.4 Active illumination based ToF 3D imaging and ranging with SPAD imaging arrays
  - 11.5 Conclusion and outlook
  - References
- 12. THz Detectors
  - Abstract
  - 12.1 Bolometers
  - 12.2 Microbolometers
  - 12.3 Pyroelectric detectors
  - 12.4 Golay cell
  - 12.5 Schottky detectors
  - 12.6 Heterodyne THz detection
  - 12.7 Plasmonic THz detectors
  - References
- 13. Resonant cavity enhanced photodetectors: Theory, design and modeling
  - Abstract
  - 13.1 Introduction
  - 13.2 DBR of the resonant cavity
  - 13.3 Quantum efficiency of the RCE-PDs
  - 13.4 Modeling of RCE-PDs
  - 13.5 Optimization of the RCE-PDs
  - 13.6 Materials for RCE-PDs
  - 13.7 RCE-PIN-photodiode structures
  - References
- 14. Unconventional photo capacitor with giant light induced capacitance enhancement
  - Abstract
  - 14.1 Introduction
  - 14.2 Basic concepts
  - 14.3 Correlated many-electron systems
  - 14.4 GSE of a many-electron systems
  - 14.5 A two-dimensional many-body fermion system
  - 14.6 Unconventional capacitors with 2DFS
  - 14.7 Anomalous features in capacitance of a MSM-2DES varactor
  - 14.8 An MSM-2DHS capacitor for photodetection
  - 14.9 Conclusion
  - References
Index

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