Photodetectors
Materials, Devices and Applications
- 2nd Edition - February 10, 2023
- Imprint: Woodhead Publishing
- Editor: Bahram Nabet
- Language: English
- Paperback ISBN:9 7 8 - 0 - 0 8 - 1 0 2 7 9 5 - 0
- eBook ISBN:9 7 8 - 0 - 0 8 - 1 0 2 8 7 6 - 6
Every bit of information that circulates the internet across the globe is a pulse of light, that at some point will need to be converted to an electric signal in order to be pr… Read more
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Request a sales quoteEvery bit of information that circulates the internet across the globe is a pulse of light, that at some point will need to be converted to an electric signal in order to be processed by the electronic circuitry in our data centers, computers, and cell phones. Photodetectors (PD’s) perform this conversion with ultra high speed and efficiency, in addition to being ubiquitously present in many other devices ranging from the mundane TV remote controls, to ultra high resolution instrumentation used in Laser Interferometer Gravitational Wave Observatory (LIGO) that reach the edge of the universe and measure gravitational waves. The second edition of "Photodetectors" fully updates the popular first edition with updated information covering the state-of-the-art in modern photodetectors.
The 2nd edition starts with basic metrology of photodetectors and common figures-of-merit to compare various devices. It follows with chapters that discuss single-photon detection with Avalanche Photodiodes; organic photodetectors that can be inkjet printed; and silicon-germanium PDs popular in burgeoning field of Silicon Photonics. Internationally recognized experts contribute chapters on one-dimensional, nanowire, PDs as well as high speed zero-dimensional, quantum dot, versions that increase the spectral span as well as speed and sensitivity of PDs and can be produced on various substrates. Solar-blind PDs that operate in harsh environments such as deep space, or rocket engines, are reviewed and new devices in GaN technology . Novel Plasmonic PDs, as well as devices which employ micro-plasma of confined charge in order to make devices that overcome speed limitation of transfer of electronic charge, are covered in other chapters. Using different, novel technologies, CMOS compatible devices are described in two chapters, and ultra high speed PDs that use low-temperature-grown GaAs (LT-GaAs) to detect fast THz signals are reviewed in another chapter. Photodetectors used in application areas of Silicon-Photonics and Microwave-Photonics are reviewed in final chapters of this book.
All chapters are of a review nature, providing a perspective of the field before concentrating on particular advancements. As such, the book should appeal to a wide audience that ranges from those with general interest in the topic, to practitioners, graduate students and experts who are interested in the state-of-the-art in photodetection.
- Addresses various photodetector devices from ultra high speed to ultra high sensitivity, capable of operation in harsh environments
- Considers a range of applications for this important technology, including silicon photonics and photonic integrated circuits
- Includes discussions of detectors based on reduced dimensional systems such as quantum wells, nanowires, and quantum dots, as well as travelling wave, and plasmonic detectors
Materials Scientists and Engineers, Physicists, Electronic Engineers in Academia and R&D
- Cover Image
- Title page
- Table of Contents
- Copyright
- List of contributors
- Preface
- 1. Metrology of thin-film photodetectors
- Abstract
- 1.1 Introduction
- 1.2 Basic radiometry
- 1.3 Ideal measurement of physical quantities
- 1.4 The responsivity
- 1.5 Electrical signals
- 1.6 Noise equivalent power
- 1.7 Measurement and noise
- 1.8 Specific detectivity
- 1.9 Photodiodes
- Acknowledgments
- References
- 2. Silicon based single-photon avalanche diode technology for low-light and high-speed applications
- Abstract
- 2.1 Introduction
- 2.2 Single-photon counting in silicon
- 2.3 Definition of SPAD figures of merit and general aspects of SPAD characterization
- 2.4 SPAD arrays in CMOS technology: architecture overview
- 2.5 Active illumination based ToF 3D imaging and ranging with SPAD imaging arrays
- 2.6 Conclusions and outlook
- References
- 3. Organic photodetectors
- Abstract
- 3.1 Introduction
- 3.2 Organic semiconductors
- 3.3 Device structure and operation mechanisms
- 3.4 Photoactive materials and detectors for different spectral regions
- 3.5 All-printed organic photodetectors fabricated by means of scalable solution-based processes
- 3.6 Applications of organic photodetectors
- 3.7 Conclusions
- 3.8 Note to the second edition
- References
- 4. Nanowires for photodetection
- Abstract
- 4.1 Introduction
- 4.2 Nanowires photodetector fabrication themes
- 4.3 Recent device demonstrations
- 4.4 Device design challenges
- 4.5 Towards development of integrated multispectral nanowires photodetectors
- 4.6 Conclusions and perspectives
- Acknowledgments
- References
- 5. High-speed InAs quantum dot photodetectors for data/telecom
- Abstract
- 5.1 Introduction
- 5.2 InAs quantum dots: epitaxial growth advances
- 5.3 Electrical and photoelectrical properties of quantum dots
- 5.4 Photodetectors for optical communication
- 5.5 InAs quantum dot-based photodetectors: trends and performance
- 5.6 InAs quantum dots photodetectors: the way ahead
- References
- 6. Advances in chip-integrated silicon-germanium photodetectors
- Abstract
- 6.1 Introduction
- 6.2 Photodetection material systems: standard semiconductors and beyond
- 6.3 Processing methods and integration opportunities
- 6.4 Contemporary advances and state-of-the-art silicon-germanium photodetectors
- 6.5 Conclusion
- Funding
- References
- 7. Ultraviolet detectors for harsh environments
- Abstract
- 7.1 Introduction
- 7.2 Photodetector parameters
- 7.3 III–nitride-based ultraviolet photodetectors
- 7.4 SIC-based ultraviolet photodetectors
- 7.5 Other types of ultraviolet photodetectors
- 7.6 Conclusions
- References
- 8. Low-temperature grown gallium arsenide (LT-GaAs) high-speed detectors
- Abstract
- 8.1 Introduction
- 8.2 Attributes of low-temperature-grown photodetectors
- 8.3 Material systems
- 8.4 Principle of operation for LT-GaAs photodetectors
- 8.5 Photodetector technologies
- 8.6 Photodetector performance
- 8.7 Applications
- 8.8 Conclusions and future trends
- References
- 9. Faster than electron speed: photodetectors with confined 2D charge plasma overcome transit-time limit
- Abstract
- 9.1 Introduction
- 9.2 Device structure
- 9.3 Current-voltage relationship
- 9.4 Time response
- 9.5 Analysis and modeling
- 9.6 Conclusions
- References
- 10. Plasmonic photodetectors
- Abstract
- 10.1 Introduction to surface plasmon resonances
- 10.2 Photodetectors
- References
- 11. CMOS-integrated waveguide photodetectors for communications applications
- Abstract
- 11.1 Introduction
- 11.2 Waveguide-integrated Ge-on-Si photodetectors
- 11.3 Waveguide-integrated silicide Schottky-barrier photodetectors
- 11.4 Conclusions
- References
- 12. Photodetectors for silicon photonic integrated circuits
- Abstract
- 12.1 Introduction
- 12.2 Technology
- 12.3 Optical properties of Si-based WGPDs
- 12.4 Demonstrated WGPDs on silicon
- 12.5 Conclusions and future outlook
- References
- 13. Efficient surface nano-textured CMOS-compatible photodiodes for Optical Interconnects
- Abstract
- 13.1 Introduction
- 13.2 Theory and design
- 13.3 Vertical PIN silicon-based photodiode for short-reach communication
- References
- 14. Photodetectors for microwave photonics
- Abstract
- 14.1 Signal generation
- 14.2 Signal detection
- 14.3 Applications
- References
- Index
- Edition: 2
- Published: February 10, 2023
- Imprint: Woodhead Publishing
- No. of pages: 512
- Language: English
- Paperback ISBN: 9780081027950
- eBook ISBN: 9780081028766
BN
Bahram Nabet
Dr. Bahram Nabet is Professor of Electrical and Computer Engineering, with affiliated appointment in Materials Science and Engineering, at Drexel University, Philadelphia, USA. He is the co-author of 3 books and over 200 publications.
Affiliations and expertise
Professor of Electrical and Computer Engineering, with affiliated appointment in Materials Science and Engineering, at Drexel University, Philadelphia, USARead Photodetectors on ScienceDirect