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Nuclear Methods in Semiconductor Physics
- 1st Edition, Volume 25 - April 1, 1992
- Editors: G. Langouche, J.C. Soares, J.P. Stoquert
- Language: English
- Paperback ISBN:9 7 8 - 0 - 4 4 4 - 5 6 7 5 5 - 0
- eBook ISBN:9 7 8 - 0 - 4 4 4 - 5 9 6 8 1 - 9
The two areas of experimental research explored in this volume are: the Hyperfine Interaction Methods, focusing on the microscopic configuration surrounding radioactive probe atoms… Read more
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Request a sales quoteThe two areas of experimental research explored in this volume are: the Hyperfine Interaction Methods, focusing on the microscopic configuration surrounding radioactive probe atoms in semiconductors, and Ion Beam Techniques using scattering, energy loss and channeling properties of highly energetic ions penetrating in semiconductors. A large area of interesting local defect studies is discussed. Less commonly used methods in the semiconductor field, such as nuclear magnetic resonance, electron nuclear double resonance, muon spin resonance and positron annihilation, are also reviewed. The broad scope of the contributions clearly demonstrates the growing interest in the use of sometimes fairly unconventional nuclear methods in the field of semiconductor physics.
Abbreviated. Ion beams in semiconductor physics and technology (S. Kalbitzer). An investigation by resistance and photoluminescence measurements of high-energy heavy-ion irradiated GaAs (R. Carin et al.). Ion beam analysis of mismatched epitaxial heterostructures (A.V. Drigo et al.). Ion channeling study of P implantation damage in CdTe (G. Leo et al.). Nucleation of point defects in low-fluence ion-implanted GaAs and GaP (W. Wesch et al.). Investigation of defects by RBS-channeling methods (G. Götz et al.). Ar ion induced X-ray emission for the analysis of light elements in CdTe (A. Al Neami et al.). Emission channeling studies in semiconductors (H. Hofsäss et al.). Neutron transmutation doped silicon - technological and economic aspects (W. Von Ammon). A focused gas-ion beam system for submicron application (C. Wilbertz et al.). Single and double buried epitaxial metallic layers in Si prepared by ion implantation (A. Vantomme et al.). Donor-hydrogen complexes in silicon studied by Mössbauer spectroscopy (Z.N. Liang, L. Nielsen). Nuclear interactions of defects in semiconductors - magnetic resonance measurements (C.A.J. Ammerlaan et al.). High resolution conversion electron spectroscopy of impurities in semiconductors (J.W. Petersen et al.). PAC studies on the formation and stability of acceptor-defect complexes in semiconductors (M. Deicher). Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study (H. Skudlik et al.). Magnetic behaviour of isolated Fe and Ni ions in semiconducting compounds (H. Waldmann et al.). Generation of intrinsic defects in CdSi:In by doing with Li atoms (H. Wolf et al.). Hyperfine interactions and Rutherford backscattering studies of Cd and Hg in CdTe single crystals and thin films (J.G. Correia et al.). Author index.
- Language: English
- Edition: 1
- Volume: 25
- Published: April 1, 1992
- Imprint: North Holland
- Paperback ISBN: 9780444567550
- eBook ISBN: 9780444596819
GL
G. Langouche
Affiliations and expertise
K.U. Leuven, BelgiumJS
J.C. Soares
Affiliations and expertise
University of Lisbon, PortugalJS
J.P. Stoquert
Affiliations and expertise
CRN, Strasbourg, France