Non-Stoichiometry in Semiconductors

(Abbreviated) Parts: I. Experimental Methods for the Determination of Non-Stoichiometry. Chemical composition and properties of semiconductors (J. Vedel). Precise compositional and trace elemental analysis by chemical methods in compound semiconductors (M.H. Yang et al.). Non-stoichiometry and aspects of heavy doping in GaAs revealed by X-ray quasi-forbidden reflection (XFR) method (I. Fujimoto). New possibilities of crystal quality control with combined use of X-ray diffraction and ultrasound (E. Zolotoyabko). II. Phase Relations and Point Defect Equilibria. A model for the phase extent of gallium arsenide derived from experimental dopant solubility data (D.T.J. Hurle). Characterization of CuInS2 by perturbed angular correlations of gamma rays (M. Brüssler et al.). Heat treatments of AgGaS2 single crystals in sulfur atmosphere (Y. Noda et al.). III. Stoichiometry Control in Melt and Solution Growth. Stoichiometry control in compound semiconductors (J.I. Nishizawa). Modified LEC technique for growing high quality III-V semiconductors (M. Tatsumi et al.). IV. Stoichiometry Control in Vapor Phase Epitaxy. Stoichiometry issues in gallium nitride and other wide gap semiconductors (J.I. Pankove). Optical characterization of strained InGaAs/InP quantum well structures (R. Schwedler et al.). The growth mechanism and stoichiometric properties of GaSb compounds grown by MOCVD (H.Y. Ueng et al.). V. Characterization of Specific Point Defects and Complexes. ODMR of stoichiometry defects in III-V semiconductors (J.M. Spaeth). Effect of non-stoichiometry on near-bandedge absorption and non-recombination in bulk GaAs (S. Tüzemen, M.R. Brozel). Photoluminescence study of CdTe:Sm crystals (P. Han et al.). VI. Non-stoichiometry and Deep Levels in I-III-VI2 Compounds. Stoichiometric effects on the properties of Cu-based chalcopyrite I,III,VI2 semiconductor thin films (J.J. Loferski). Chemical and structural characterization of thin films of CuInSe2 (B.H. Tseng, C.A. Wert). Deep levels in monocrystalline CuInSe2 (L. Li, I. Shih). VII. Non-Stoichiometric Oxide Semiconductors. Oxygen non-stoichiometry in thermally annealed and hydrogen implanted TiO2 thin films observed by raman spectroscopy (A. Turcovic et al.). Author index.